Fairchild KST4123, KST4123 Schematic [ru]
KST4123
General Purpose Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KST4123
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
Electrical Characteristics
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=50mA, IB=5mA 0.3 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=50mA, IB=5mA 0.95 V
V
BE
f
T
C
ib
C
ob
NF Noise Figure V
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 40 V
* Collector-Emitter Breakdown Voltage IC=1mA, IE=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=20V, IE=0 50 nA
Emitter Cut-off Current VEB=3V, IC=0 50 nA
* DC Current Gain VCE=1V, IC=2mA
V
=1V, IC=50mA
CE
50
25
150
Current Gain Bandwidth Product VCE=20V, IC=10mA, f=100MHz 250 MHz
Input Capacitance VBE=0.5V, IC=0, f=100KHz 8 pF
Output Capacitance VCB=5V, IE=0, f=100KHz 4 pF
=5V, IC=100µA, RS=1KΩ
CE
Noise Bandwidth=10Hz to 15.7KHz
6dB
Marking
5B
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST4123
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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