Fairchild KST3906 service manual
KST3906
PNP Epitaxial Silicon Transistor
Features
• General Purpose Transistor
KST3906 — PNP Epitaxial Silicon Transistor
September 2010
3
Marking
Absolute Maximum Ratings T
1. Base 2. Emitter 3. Collector
= 25°C unless otherwise noted
a
SOT-23
1
2
2A
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
T
STG
Electrical Characteristics T
Collector-Base Vol tage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -200 mA
Collector Power Dissipation 350 mW
C
Storage Temperature 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Unit
BV
CBO
BV
CEO
BV
I
CEX
h
FE
V
CE
V
BE
f
C
NF Noise Figure I
t
ON
t
OFF
*
Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -10μA, IE=0 -40 V
* Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0 -40 V
Emitter-Base Breakdown Voltage IE= -10μA, IC=0 -5 V
EBO
Collector Cut-off Current VCE= -30V, VEB= -3V -50 nA
* DC Current Gain VCE= -1V, IC= -0.1mA
= -1V, IC= -1mA
V
CE
= -1V, IC= -10mA
V
CE
= -1V, IC= -50mA
V
CE
V
= -1V, IC= -100mA
CE
(sat) * Collector-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
= -50mA, IB= -5.0mA
I
C
(sat) * Base-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
= -50mA, IB= -5.0mA
I
C
Current Gain Bandwidth Product IC= -10mA, VCE= -20V, f=100MHz 250 MHz
T
Output Capacitance VCB= -5V, IE=0, f=1.0MHz 4.5 pF
ob
= -100μA, VCE= -5V
C
=1KΩ, f=10Hz to 15.7KHz
R
S
Turn On Time VCC= -3V, VBE= -0.5V
= -10mA, IB1= -1mA
I
C
Turn Off Time VCC= -3V, IC= -10mA
= -1mA
I
B1=IB2
60
80
100
300
60
30
-0.25
-0.4
-0.65 -0.85
-0.95
4dB
70 ns
300 ns
V
V
V
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3906 Rev. A3 1
Typical Performance Characteristics
KST3906 — PNP Epitaxial Silicon Transistor
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
VCE = -1V
IE = 0
f = 1MHz
-10
IC = 10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
VCE = -20V
100
[MHz],
T
f
0.1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3906 Rev. A3 2
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