Fairchild KST3904 service manual
KST3904
NPN Epitaxial Silicon Transistor
Features
• General Purpose Transistor
KST3904 — NPN Epitaxial Silicon Transistor
November 2011
3
Marking
Absolute Maximum Ratings T
1. Base 2. Emitter 3. Collector
= 25°C unless otherwise noted
a
SOT-23
1
2
1A
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
T
STG
Electrical Characteristics T
Collector-Base Vol tage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
C
Storage Temperature Range -55 to 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE
(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA
V
BE
C
f
NF Noise Figure I
t
ON
t
OFF
*
Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10μA, IE=0 60 V
* Collector-Emitter Breakdown V olt age IC=1mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10μA, IC=0 6 V
Collector Cut-off Current VCE=30V, VEB=3V 50 nA
* DC Current Gain VCE=1V, IC=0.1mA
V
=1V, IC=1mA
CE
=1V, IC=10mA
V
CE
V
=1V, IC=50mA
CE
=1V, IC=100mA
V
CE
40
70
100
60
30
(sat) * Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
=50mA, IB=5mA
I
C
0.65 0.85
=50mA, IB=5mA
I
C
Output Capacitance VCB=5V, IE=0, f=1MHz 4 pF
ob
Current Gain-Bandwidth Product VCE=20V, IC=10mA, f=100MHz 300 MHz
T
=100μA, VCE=5V, RS=1KΩ,
C
f=10Hz to 15.7KHz
Turn On Time VCC=3V, VBE=0.5V,
=10mA, IB1=1mA
I
C
Turn Off Time VCC=3V, IC=10mA,
=1mA
I
B1=IB2
300
0.2
0.3
0.95
5dB
70 ns
250 ns
V
V
V
V
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3904 Rev. A2 1
Typical Performance Characteristics
KST3904 — NPN Epitaxial Silicon Transistor
240
200
160
120
80
, DC CURRENT GAIN
FE
h
40
0
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
[pF], CAPACITANCE
ob
C
1
VCE = 1V
IE = 0
f = 1MHz
10
IC = 10 I
B
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VCE(sat)
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
VCE = 20V
100
[MHz],
T
f
0.1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
CURRENT GAIN BANDWIDTH PRODUCT
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KST3904 Rev. A2 2
Loading...