Fairchild KST2222A service manual
tm
KST2222A
NPN Epitaxial Silicon Transistor
General Purpose Transistor
KST2222A NPN Epitaxial Silicon Transistor
May 2006
3
2
SOT-23
1
Marking
1P
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Electrical Characteristics T
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 350 mW
Storage Temperature Range -55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
V
BE
f
T
C
ob
NF Noise Figure IC = 100µA, V
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V
Collector Cut-off Current V
DC Current Gain * V
= 60V, IE = 0 0.01 µA
CB
= 10V, IC = 0.1mA
CE
V
= 10V, IC = 1mA
CE
V
= 10V, IC = 10mA
CE
V
= 10V, IC = 150mA
CE
V
= 10V, IC = 500mA
CE
35
50
75
100
40
(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
(sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
0.6 1.2
IC = 500mA, IB = 50mA
Current Gain Bandwidth Product IC = 20mA, V
Output Capacitance V
= 10V, IE = 0, f = 1MHz 8 pF
CB
RS = 1KΩ, f = 1MHz
Turn On Time V
Turn Off Time V
= 30V, IC = 150mA
CC
V
= 0.5V, I
BE
= 30V, IC = 150mA,
CC
IB1 = IB2 = 15mA
= 20V, f = 100MHz 300 MHz
CE
= 10V
CE
= 15mA
B1
300
0.3
1.0
2.0
4 dB
35 ns
285 ns
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KST2222A Rev. B
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Vo ltage
KST2222A NPN Epitaxial Silicon Transistor
0.4
B=10
250
Vce=5V
125C
200
150
hfe, Current Gain
100
50
1 10 100
75C
25C
Collector Current, [mA]
0.3
0.2
0.1
Vce(sat), Saturation Current,[V]
1 10 100
Collector Current, [mA]
125C
75C
25C
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Vbe(sat), Saturation Current,[V]
0.3
0.1 1 10 100
25C
75C
125C
Collector C u r re nt, [mA]
B=10
100
VCB = 60V
10
1
Leakage current of Collector - Base(nA)
25 50 75 100 125 150
Temperature, ['C]
Figure 5. Output Capacitance
10
1
[pF], Capacitance
ob
C
0.1
1 10 100
KST2222A Rev. B
VCB [V], C ollec to r -Bas e V oltag e
Figure 6. Power Dissipation vs
Ambient Temperature
IE = 0
f = 1 MHz
0.4
0.3
0.2
- Power Dissipation (W)
D
0.1
P
0.0
0 25 50 75 100 125 150
Temperature, [ OC]
2 www.fairchildsemi.com
Loading...