KST20 NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
V
CEO
V
EBO
I
C
P
C
T
STG
40
4
100
350
150
• Refer to KST3904 for graphs
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Max Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current-Gain Bandwidth Product
Output Capacitance
BV
BV
I
h
V
f
C
CBO
T
CEO
EBO
FE
(sat)
CE
CB
V
V
mA
mW
°C
IC=1.0mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VCE=10V, IC=5mA
IC=10mA, IB=1.0mA
IC=50mA, VCE=10V
VCB=10V, IE=0
f=100KHz
SOT-23
1. Base 2. Emitter 3. Collector
40
4
40
125
100
400
0.25
V
V
nA
V
MHz
pF
4
Rev. B
1999 Fairchild Semiconductor Corporation
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