Fairchild KST13, KST14, KST13, KST14 Schematic [ru]
KST13/14
Darlington Amplifier Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST13/14
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CES
EBO
C
C
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 10 V
Collector Current 300 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CES
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA 1.5 V
V
CE
(on) Base-Emitter On Voltage VCE=5V, IC=100mA 2.0 V
V
BE
f
T
Collector-Emitter Breakdown Voltage IC=100µA, VBE=0 30 V
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=10V, IC=0 100 nA
DC Current Gain
Current Gain Bandwidth Product VCE=5V, IC=10mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
: KST13
: KST14
: KST13
: KST14
V
=5V, IC=10mA
CE
=5V, IC=100mA
V
CE
f=100MHz
5K
10K
10K
20K
125 MHz
Marking Code
Type KST13 KST14
Mark 1M 1N
Marking
1M
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
Typical Characteristics
KST13/14
1000k
10
VCE = 5V
100k
10k
, DC CURRENT GAIN
FE
h
1k
1
10
100
1000
1
0.5
(sat)[V], SATURATION VOLTAGE
CE
0.3
(sat), V
BE
V
0.1
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
5
10
IC[mA], COLLECTOR CURRENT
IC = 1000 I
B
100
300
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
VCE = 5V
1000
100
[MHz],
T
f
10
VCE = 5V
[mA], COLLECTOR CURRENT
C
I
1
0
0.6
1.0
VBE(sat)[V], BASE-EMITTER VOLTAGE
1.4
2.2
1.8
2.60.2
CURRENT GAIN BANDWIDTH PRODUCT
1
1 10 20
3 100
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
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