Fairchild KST05, KST06 service manual
KST05/06
Driver Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Complement to KST55/56
NPN Epitaxial Silicon Transistor
= KST05: 60V
CEO
KST06: 80V
(max) = 350mW
C
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST05/06
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance junction to Ambient 357 °C/W
R
TH
Collecto-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 4 V
Collector Current 500 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.25 V
V
CE
(on) Base-Emitter On Voltage VCE=1V, IC=100mA 1.2 V
V
BE
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE=100µA, IC=0 4 V
Collector C u t-o ff C u r re n t
Collector Cut-off Current VCE=60V, IB=0 0.1 µA
DC Current Gain VCE=1V, IC=10mA
Current Gain Bandwidth Product VCE=2V, IC=100mA, f=100MHz 100 MHz
Ta=25°C unless otherwise noted
: KST05
: KST06
: KST05
: KST06
Ta=25°C unless otherwise noted
: KST05
: KST06
: KST05
: KST06
=1mA, IB=0 60
I
C
VCB=60V, IE=0
=80V, IE=0 0.1
V
CB
V
=1V, IC=100mA
CE
60
80
60
80
80
0.1
50
50
V
V
V
V
V
V
µA
µA
Marking Code
Type KST05 KST06
Mark 1H 1G
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Marking
1H
Package Dimensions
0.40
±0.03
KST05/06
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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