Fairchild KSP42, KSP43 service manual
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
=KSP42: 300V
CEO
KSP43: 200V
(max)=625mW
C
KSP42/43
KSP42/43
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=20mA, IB=2mA 0.9 V
V
BE
C
ob
f
T
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage
* Collector -Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain VCE=10V, IC=1mA
Output Capaci tance
Current Gain Bandwidth Product VCE=20V, IC=10mA
Ta=25°C unless otherwise noted
: KSP42
: KSP43
: KSP42
: KSP43
Ta=25°C unless otherwise noted
IC=100µA, IE=0
: KSP42
: KSP43
IC=1mA, IB=0
: KSP42
: KSP43
: KSP42
: KSP43
: KSP42
: KSP43
=200V, IE=0
V
CB
=160V, IE=0
V
CB
=6V, IC=0
V
BE
V
=4V, IC=0
BE
V
=10V, IC=10mA
CE
=10V, IC=30mA
V
CE
VCB=20V, IE=0
: KSP42
f=1MHz 3
: KSP43
f=100MHz
300
200
300
200
300
200
300
200
100
100
100
100
25
40
40
4
50 MHz
V
V
V
V
V
V
V
V
nA
nA
nA
nA
pF
pF
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSP42/43
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
110100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
cb
C
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
1 10 100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
120
100
VCE = 20V
80
60
[MHz],
T
f
40
20
CURRENT GAIN BANDWIDTH PRODUCT
0
1 10 100
IC[mA], COLLECTOR CURRENT
IC = 10 I
B
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
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