KSP2907A
PNP General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
• Available as PN2907A
KSP2907A PNP General Purpose Amplifier
September 2006
TO-92
1 2 3
KSP2907A : 1. Emitter 2. Base 3. Collector
KSP2907AC : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Collector-Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector current -600 mA
Junction Temperature +150 °C
Storage Temperature -55 ~ +150 °C
=25°C unless otherwise noted
a
Symbol Parameter Max Units
P
C
R
θJC
R
θJA
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Electrical Characteristics * T
Collector Power Dissipation, by R
θJA
625 mW
Thermal Resistance, Junction to Case(note1) 83.3 °C/W
Thermal Resistance, Junction to Ambient(note2) 200 °C/W
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
C
obo
f
T
t
ON
t
OFF
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -60 V
Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V
Collector Cutoff Current VCB = -50V, IE = 0 -10 nA
DC Current Gain VCE = -10V, IC = -0.1mA,
VCE = -10V, IC = -1mA,
VCE = -10V, IC = -10mA,
VCE = -10V, IC = -150mA,
VCE = -10V, IC = -500mA,
Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Output Capacitance V
= -10V, IE = 0, f = 1.0MHz 8 pF
CB
Current Gain Bandwidth Product IC = -50mA, VCE = -20V,
75
100
100
100
300
50
-0.4
-1.6
-1.3
-2.6
200 MHz
f = 100MHz
Turn On Time VCC= -30V, IC = -150mA, IB1= -15mA 45 ns
Turn Off Time VCC= -6V, IC = -150mA,IB1= I
= -15mA 100 ns
B1
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KSP2907A Rev. E
Package Marking and Ordering Information
Device(note) Device Marking Package Packing Method Qty(pcs) Pin Definitions
KSP2907ABU KSP2907A TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSP2907ACBU KSP2907AC TO-92 BULK -- 1.Emitter 2.Collector 3.Base
KSP2907ATA KSP2907A TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSP2907ACTA KSP2907AC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base
KSP2907ATF KSP2907A TO-92 TAPE & REEL 2,000 1.Emitter 2.Base 3.Collector
Note : Affix “-C-” - center collector pin.
Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions)
Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions)
SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)
KSP2907A PNP General Purpose Amplifier
KSP2907A Rev. E
2 www.fairchildsemi.com