KSP2222A
NPN General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Available as PN2222A
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6.0 V
Collector current 600 mA
Junction Temperature +150 °C
Storage Temperature -55 ~ +150 °C
1 2 3
1. Emitter 2. Base 3. Collector
KSP2222A NPN General Purpose Amplifier
July 2006
TO-92
Thermal Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Max Units
P
C
R
θJC
R
θJA
Electrical Characteristics * T
Collector Power Dissipation, by R
θJA
625 mW
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
t
ON
t
OFF
NF Noise Figure IC = 100µA, VCE= 10V,
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 75 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 40 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V
Collector Cutoff Current VCB = 60V, IE = 0 0.01 µA
Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
DC Current Gain VCE = 10V, IC = 0.1mA,
VCE = 10V, IC = 1mA,
VCE = 10V, IC = 10mA,
VCE = 10V, IC = 150mA,
VCE = 10V, IC = 500mA,
Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
35
50
75
100
40
300
0.3
1
0.6 1.2
2.0
Current Gain Bandwidth Product IC = 20mA, VCE = 20V , f = 100MHz 300 MHz
Output Capacitance V
Turn On Time VCC= 30V, IC = 150mA,
Turn Off Time VCC= 30V, IC = 150mA,
= 10V, IE = 0, f = 1.0MHz 8 pF
CB
35 ns
IB1= 15mA, V
BE(off)
= 0.5V
285 ns
IB1= I
= 15mA
B1
4 dB
RS= 1KΩ , f = 1.0KHz
V
V
V
V
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KSP2222A Rev. B
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
KSP2222A NPN General Purpose Amplifier
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.1
–0.0
(0.25)
(R2.29)
Dimensions in Millimeters
KSP2222A Rev. B
2 www.fairchildsemi.com