Fairchild KSD882 service manual
查询KSD882供应商
Audio Frequency Power Amplifier
Low Speed Switching
• Complement to KSB772
KSD882
KSD882
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
ICP
IB
PC
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Collector- Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter- Base Voltage 5 V
Collector Current (DC) 3 A
*Collector Current (Pulse) 7 A
Base Current 0.6 A
Collector Dissipation (TC=25°C) 10 W
Collector Dissipation (Ta=25°C) 1 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
IEBO
hFE1
h
FE2
(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.5 V
V
CE
(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
*DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 30V, IE = 0 1 µA
CB
= 3V , IC = 0 1 µA
EB
= 2V, IC = 20mA
CE
= 2V, IC = 1A
V
CE
= 5V, IE = 0.1A 90 MHz
CE
= 10V, IE = 0
CB
f = 1MHz
3060 150
160 400
45 pF
hFE Classificntion
Classification R O Y G
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400
Typical Characteristics
KSD882
IB = 10mA
IB = 9mA
IB = 8mA
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
2.0
1.6
1.2
0.8
IB = 3mA
[A], COLLECTOR CURRENT
0.4
C
I
0.0
048121620
IB = 2mA
IB = 1mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
0.01
CE
VBE(sat)
VCE(sat)
IC = 10 I
1000
VCE = 2V
100
, DC CURRENT GAIN
FE
h
10
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
1000
B
100
10
VCE = 5V
(sat), V
BE
V
1E-3
1E-3 0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
[pF], CAPACITANCE
ob
C
10
110100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
1
0.01 0.1 1
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[A], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
10ms
100us
1ms
S/b Limited
Rev. A, February 2000
IE=0
f=1MHz
10
ICMAX. (pulse)
IC MAX. (DC)
1
Dissipation Limited
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
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