Fairchild KSD5041 service manual
KSD5041
AF Output Amplifier for Electronic Flash Unit
• Low Collector-Emitter Saturation Voltage
• High Performance at Low Supply Voltage
KSD5041
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 40 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 7 V
Collector Current 5 A
Collector Power Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=3A, IB=0.1A 1 V
V
CE
f
T
C
ob
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 20 V
Emitter-Base Breakdown Voltage IC=10µA, IC=0 7 V
Collector Cut-off Current VCB=10V, IE=0 0.1 µA
Emitter Cut-off Current VEB=7V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=0.5A
Current Gain Bandwidth Product VCE=6V, IC=50mA 150 MHz
Output Capacitance VCB=20V, IE=0, f=1MHz 50 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=2V, IC=2A
CE
180
150
600
hFE Classification
Classification P Q R
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002
180 ~ 270 230 ~ 380 340 ~ 600
Typical Characteristics
KSD5041
2.4
2.0
1.6
1.2
0.8
[A], COLLECTOR CURRENT
C
I
0.4
0.0
0.0 0.4 0.8 1.2 1. 6 2.0 2.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
IB = 7mA
IB = 6mA
IB = 5mA
IB = 4mA
IB = 3mA
IB = 2mA
IB = 1mA
VCE = 10V
T
= 25oC
a
800
700
600
500
400
300
, DC CURRENT GAIN
200
FE
h
100
0
0.01 0.1 1 10
VCE= 2V
℃
T
= 25
a
IC[A], COLLECTOR CURRENT
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IC/IB = 30
=25oC
T
a
VCE(sat)[V], SATURATION VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
IE=0
f = 1MHz
Ta = 25oC
400
350
300
250
200
150
100
50
0
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
0.01 0.1 1 10
T
f
VCE = 6V
Ta = 25oC
IC[A], COLLECTOR CURRENT
Rev. A3, September 2002
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