Fairchild KSD1616, KSD1616A service manual
查询KSD1616供应商
Audio Frequency Power Amplifier & Medium
Speed Swit ching
• Complement to KSB1116/1116A
KSD1616/1616A
KSD1616/1616A
1
1. Emitter 2. Collector 3. Base
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle < 50%
Collector-Base Voltage : KSD1616
Collector-Emitter Voltage : KSD1616
Emitter-Base Voltage 6 V
Collector Current (DC) 1 A
* Collector Current (Pulse) 2 A
Collector Power Dissipation 0.75 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(on) * Base-Emitter On Voltage VCE=2V, IC=50mA 600 640 700 mV
BE
(sat) * Collector-Emitter Saturation Voltage IC=1A, IB=50mA 0.15 0.3 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC=1A, IB=50mA 0.9 1.2 V
V
BE
C
ob
f
T
t
ON
t
STG
t
F
* Pulse Test: PW<350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current VCB=60V, IE=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
DC Current Gain : KSD1616
: KSD1616A
Output Capacitance VCE=10V, IE=0, f=1MHz 19 pF
Current Gain Bandwidth Product VCE=2V, IC=100mA 100 160 MHz
Turn On Time VCC=10V, IC=100mA
Storage Time 0.95 µs
Fall Time 0.07 µs
Ta=25°C unless otherwise noted
: KSD1616A
: KSD1616A
Ta=25°C unless otherwise noted
VCE=2V, IC=100mA
V
=2V, IC=1A
CE
I
= -IB2=10mA
B1
(off) = -2 ~-3V
V
BE
135
135
81
60
120
50
60
600
400
0.07 µs
V
V
V
V
h
Classification
FE1
Classification Y G L
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
135 ~ 270 200 ~ 400 300 ~ 600
Typical Characteristics
KSD1616/1616A
100
80
60
40
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
20
[mA], COLLECTOR CURRENT
C
I
0
0246810
IB = 50µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[mA], COLLECTOR CURRENT
VCE = 2V
= 4.0mA
IB = 3.5mA
IB = 3.0mA
IB = 2.5mA
IB = 2.0mA
IB = 1.5mA
IB = 1.0mA
IB = 0.5mA
1.0
IB = 5.0mA
IB = 4.5mA
0.8
0.6
B
I
0.4
[A], COLLECTOR CURRENT
0.2
C
I
0.0
0.00.20.40.60.81.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 20 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Switching Time
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
10
IE=0
f = 1MHz
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
-0.001 -0.01 -0.1 -1
IC[A], COLLECTOR CURRENT
VCC = -10V
IC = 10IB1 = -10I
B2
t
STG
t
F
t
ON
Rev. A2, September 2002
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