Fairchild KSC5019 service manual
Low Saturation
•VCE(sat)=0.5V at IC=2A, IB=50mA
KSC5019
KSC5019
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CES
V
CEO
Emitter-Base Voltage 6 V
V
EBO
I
C
I
* Collector Current (Pulse) 5 A
CP
Base Current 2 A
I
B
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤30%
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Collector-Emitter Voltage 10 V
Collector Current (DC) 2 A
Collector Power Dissipation 750 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics T
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
I
EBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC=2A, IB=50mA 0.2 0.5 V
CE
(on) Base Emitter On Voltage VCE=1V, IC=2A 0.86 1.5 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB=30V, IE=0 100 nA
Emitter Cut-off Current VEB=6V, IC=0 100 nA
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 10 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 6 V
DC Current Gain VCE=1V, IC=0.5A
Current Gain Bandwidth Product VCE=1V, IC=0.5A 150 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 27 pF
Ta=25°C unless otherwise noted
=25°C unless otherwise noted
a
=1V, IC=2A
V
CE
140
70 200
600
hFE Classification
Classification L M N P
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600
Typical Characteristics
KSC5019
5
IB = 50mA
IB = 40mA
4
3
2
[A], COLLECTOR CURRENT
C
1
I
0
012345
IB = 30mA
IB = 20mA
IB = 10mA
EMITTER COMMON
Ta=25oC
IB = 5mA
IB = 0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
10,000
1,000
100
, DC CURRENT GAIN
10
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
1
0.1
EMITTER COMMON
IC/IB=40
5
EMITTER COMMON
VCE=1V
4
3
2
EMITTER COMMON
VCE=1V
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.1 1
IC[A], COLLECTOR CURRENT
1
[A], COLLECTOR CURRENT
C
I
0
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
10
IC MAX. (Pulse)
IC MAX. (DC)
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.01 0.1 1 10 100
1ms
10ms
100ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
800
600
400
200
[mW], POWER DISSIPATION
MAX.
CEO
V
C
P
0
050100150
TC[oC], CASE TEMPERATURE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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