Fairchild KSC2755, KSC2755 Schematic [ru]
KSC2755
RF AMP, FOR VHF &TV TUNER
• Low NF, High G
• Forward AGC Capability to 30 dB
• NF=2.0dB (TYP.), G
NPN Epitaxial Silicon Transistor
PE
=23dB (TYP.) at f=200MHz
PE
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
KSC2755
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 5 V
Collector Current 20 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
f
T
C
RE
G
PE
I
AGC
NF Noise Figure V
Collector Cut-off Current VCB=20V, IE=0 0.1 µA
DC Current Gain VCE=10V, IC=3mA 60 120 240
Current Gain Bandwidth Product VCE=10V, IC=3mA 400 600 MHz
Reverse Transfer Capacitance f=1MHz, VCB=10V, IE=0 0.3 0.5 pF
Power Gain VCE=10V, IC=3mA
AGC Current f=200MHz
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=200MHz
at GR= -30dB
I
E
=10V, IC=3mA
CE
f=200MHz
20 23 dB
-10 -12 mA
2.0 0.3 dB
hFE Classification
Classification R O Y
h
FE
60 ~ 120 90 ~ 180 120 ~ 240
Marking
H1O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC2755
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
0246810
IB = 140µA
IB = 120µA
IB = 100µA
IB = 80µA
IB = 60µA
IB = 40µA
IB = 20µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. DC Current Gain
10000
1000
IC = 10 I
B
100
10000
1000
VCE = 10V
IC = 10 I
B
(sat)[mV], SATURATION VOLTAGE
CE
V
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
(sat)[mV], SATURATION VOLTAGE
BE
V
100
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
1000
100
10
0.1 1 10 100
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. f
- I
C
T
VCE = 10 V
10
1
[pF], REVERSE TRANSFER CAPACITANCE
re
0.1
C
1 10 100
VCB[V], COLLECTOR -BA SE VOLTAGE
Figure 6. Cre - V
CB
f = 1 MHz
I
= 0
E
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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