Fairchild KSC2715, KSC2715 Schematic [ru]
KSC2715
FM RADIO AMP, MIX, CONV, OSC, IF AMP
NPN Epitaxial Silicon Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
KSC2715
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 35 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4 V
Collector Current 50 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ . Max. Units
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.4 V
V
CE
(on) Base-Emitter On Voltage IC=10mA, IB=1mA 1.0 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB=35V, IE=0 0.1 µA
Emitter Cut-off Current VEB=4V, IC=0 1 µA
DC Current Gain VCE=12V, IC=2mA 70 240
Current Gain Bandwidth Product VCE=10V, IC=1mA 100 400 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 2 3.2 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y
h
FE
70 ~ 140 120 ~ 240
Marking
B1O
hFE grade
©2004 Fairchild Semiconductor Corporation Rev. B2, May 2004
Typical Characteristics
KSC2715
10
8
IB = 90µA
IB = 80µA
IB = 70µA
6
IB = 60µA
IB = 50µA
4
IB = 40µA
IB = 30µA
[mA], COLLECTOR CURRENT
2
C
I
IB = 20µA
IB = 10µA
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IC=10I
1000
VCE=12V
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
32
B
28
24
20
16
12
8
[mA], COLLECTOR CURRENT
C
4
I
0
0.00.20.40.60.81.01.2
VCE=12V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
[pF], CAPACITANCE
ob
C
0.1
110100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2004 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
f = 1MHz
IE=0
1000
100
10
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
110
IC[mA], COLLECTOR CURRENT
VCE = 10V
Rev. B2, May 2004
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