Fairchild KSC2331 service manual
KSC2331
NPN Epitaxial Silicon Tr ansistor
Features
• Low Frequency Amplifier & Medium Speed Switching
• Complement to KSA931
• High Collector-Base Voltage : V
• Collector Current : I
• Collector Dissipation : P
=700mA
C
C
=1W
CBO
=80V
December 2011
1
1. Emitter 2. Collector 3. Base
TO-92L
KSC2331 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics T
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 8 V
Collector Current 700 mA
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -55 to 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.7 V
CE
V
(sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.20 V
BE
Collector-Base Breakdown Voltage IC=100μA, IE=0 80 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
Emitter-Base Breakdown Voltage IE=10μA, IC=0 8 V
Collector Cut-off Current VCB=60V, IE=0 0.1 μA
Emitter Cut-off Current VEB=5V, IC=0 0.1 μA
DC Current Gain VCE=2V, IC=50mA 40 240
hFE Classification
Classification R O Y
h
FE
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2331 Rev. B0 1
40 ~ 80 70 ~ 140 120 ~ 240
Typical Performance Characteristics
KSC2331 — NPN Epitaxial Silicon Transistor
200
180
160
140
120
100
80
60
[mA], COLLECTOR CURRENT
40
C
I
20
0
0 5 10 15 20 25 30 35 40 45 50 55
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
240
200
160
120
80
, DC CURRENT GAIN
FE
h
40
0
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
VBE(sat)
IC = 10 I
B
1000
100
VCE = 2V
VCE = 2V
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
VCE(sat)
0.01
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
*
200ms
1. Ta = 25oC
2. *Single Pulse
10000
1000
D
100
[mA], COLLECTOR CURRENT
C
I
10
1 10 100 1000
C
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISS IPATION
C
P
0.2
0.0
0 25 50 75 100 125 150 175
Ta[oC], AMIBIENT TEM PERATUR E
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
KSC2331 Rev. B0 2
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