Fairchild KSC2316 service manual
KSC2316
Audio Power Amplifier Applications
• Driver Stage Amplifier
• Complement to KSA916
KSC2316
1
1. Emitter 2. Collector 3. Base
TO-92L
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 800 mA
Collector Power Dissipation 900 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ +150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 1 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=1mA, IE=0 120 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 120 V
Emitter-Base Breakdown Voltage IE=1mA, IC=0 5 V
Collector Cut-off Current VCB=120V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=10mA
Current Gain Bandwidth Product VCE=5V, IC=100mA 120 MHz
Collector Output Capacitance VCB=10V,IE=0, f=1MHz 30 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=5V, IC=100mA
CE
60
80 240
hFE Classification
Classification O Y
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002
80-160 120-240
Typical Characteristics
KSC2316
1000
800
IB = 15mA
IB = 10mA
IB = 7mA
600
IB = 5mA
IB = 4mA
400
IB = 3mA
IB = 2mA
[mA], COLLECTOR CURRENT
200
C
I
0
024681012
IB = 1mA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOL TA GE
CE
V
0.01
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC = 10 I
1000
VCE = 5V
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
10000
B
1000
100
10
[mA], COLLECTOR CURRENT
C
I
1
0.0 0.2 0.4 0.6 0.8 1.0
VCE = 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
10000
1000
100
[mA], COLLECTOR CURRENT
C
I
10
1 10 100
DC OPERATING
T
C
=25
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
*Single Pulse
1ms*
100ms*
10ms*
o
C
Rev. B1, September 2002
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