KSC2223
High Frequency Amplifier
• Very small size to assure good space factor in Hybrid IC applications
=600MHz (TYP) at IC=1mA
•f
T
•C
=1pF (TYP) at VCB=6V
ob
• NF=3dB (TYP) at f=100MHz
NPN Epitaxial Silicon Transistor
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
KSC2223
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 30 V
Collector-Emitter Voltage 20 V
Emitter-Base Voltage 4 V
Collector Current 20 mA
Collector Power Dissipation 150 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
I
CBO
h
FE
V
(sat) Collector Emitter Saturation Voltage IC=10mA, IB=1mA 0.1 0.3 V
CE
C
ob
f
T
C
c·rbb
NF Noise Figure V
Collector Cut-off Current V
DC Current Gain VCE=6V, IC=1mA 40 90 180
Output Capacitance VCB=6V, IE=0, f=1MHz 1 pF
Current Gain Bandwidth Product VCE=6V, IC=1mA 400 600 MHz
Time Constant VCB=6V, IC=1mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
30V, IE=0 0.1 µA
CB=
f=31.9MHz
=6V, IC=1mA
CE
f=100MHz, R
=50Ω
S
12 ps
3dB
hFE Classification
Classification R O Y
h
FE
40 ~ 80 60 ~ 120 90 ~ 180
Marking
H5O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002
Typical Characteristics
KSC2223
10
8
6
IB = 80µA
IB = 70µA
IB = 60µA
IB = 50µA
4
IB = 40µA
IB = 30µA
[mA], COLLECTOR CURRENT
2
C
I
0
0 4 8 121620
IB = 20µA
IB = 10µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
100
, DC CURRENT GAIN
FE
h
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain 1
1000
IC = 1mA
100
, DC CURRENT GAIN
FE
h
10
110100
VCE[V], COLLECTOR-EMITTER VOLTAGE
10
1
0.1
(sat)[V], SATURATION VOL TA GE
CE
(sat), V
BE
V
0.01
0.1 1 10
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
VCE = 6V
IC = 10 I
B
Figure 3. DC current Gain 2 Figure 4. Base-Emitter Saturation Voltage
1000
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Collector-Base Time Constant
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
100
VCE = 6V
10
[ps], COLLECTOR-BASE TIME CONSTANT
1
c.rbb
0.1 1 10 100
C
IE[mA], EMITTER CURRENT
VCB = 6V
f = 31.9MHz
Rev. A3, September 2002