Fairchild KSC1623, KSC1623 Schematic [ru]
KSC1623
Low Frequency Amplifier & High Frequency
OSC.
• Complement to KSA812
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
KSC1623
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 5 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 0.86 1.0 V
V
BE
(on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.55 0.62 0.65 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB=60V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=6V, IC=1mA 90 200 600
Current Gain Bandwidth Product VCE=6V, IC=10mA 250 MHz
Output Capacitance VCB=6V, IE=0, f=1MHz 3 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification O Y G L
h
FE
90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600
Marking
C1O
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Typical Characteristics
KSC1623
IB = 400µA
IB = 350µA
IB = 300µA
IB = 250µA
IB = 200µA
IB = 150µA
IB = 100µA
IB = 50µA
100
90
80
70
60
50
40
30
20
[mA], COLLECTOR CURRENT
C
I
10
0
0 4 8 12 16 20
VCE[V], COLLECTOR-EMITTER VO LTAG E
100
10
1
[mA], COLLECTOR CURRENT
C
I
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V],BASE-EMITTER VOLTAGE
Figure 1. Static Charactersitic Figure 2. Transfer Characteristic
VCE = 6V
1000
1000
100
, DC CURRENT GAIN
FE
h
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
VCE = 6V
IC=10I
B
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
0.1
1 10 100 1000
VCB(V), COLLECTOR-BASE VOLTAGE
Figure 5. Output Capacit a nc e Figure 6. Current Gai n Bandwidth Product
©2002 Fairchild Semiconductor Corporation
(sat), V
10
BE
V
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
f=1MHz
I
=0
E
100
[MHz],
T
f
10
1
CURRENT GAIN-BAND WIDTH PROD UCT
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
VCE=6V
Rev. A2, September 2002
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