Fairchild KSC1008 service manual
tm
KSC1008
NPN Epitacial Silicon Transistor
Features
• Low frequency amplifier medium speed switching.
• High Collector-Base Voltage : V
• Collector Current : IC=700mA
• Collector Power Dissipation : PC=800mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)
• Complement to KSA708
CBO
=80V.
KSC1008 NPN Epitacial Silicon Transistor
September 2006
TO-92
1 2 3
KSC1008 : 1. Emitter 2. Base 3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * T
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 8 V
Collector current 700 mA
Collector Power Dissipation 800 mW
Junction Temperature +150 °C
Storage Temperature -55 ~ +150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.4 V
VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V
f
T
C
ob
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V
Collector Cut-off Current VCB=60V, IE=0 0.1 µA
Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
DC Current Gain VCE=2V, IC=50mA 40 400
Current Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
hFE Classification
Classification R O Y G
h
FE
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
KSC1008 Rev. B
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Package Marking and Ordering Information
Device(note) Device Marking Package Packing Method Qty(pcs) Pin Definitions
KSC1008COBU C1008OC TO-92 BULK -- 1.Emitter 2.Collector 3.Base
KSC1008COTA C1008OC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base
KSC1008CYBU C1008YC TO-92 BULK -- 1.Emitter 2.Collector 3.Base
KSC1008CYTA C1008YC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base
KSC1008GBU C1008G TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008GTA C1008G TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008OBU C1008O TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008OTA C1008O TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008RBU C1008R TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008RTA C1008R TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008YBU C1008Y TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008YTA C1008Y TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008YTF C1008Y TO-92 TAPE & REEL 2,000 1.Emitter 2.Base 3.Collector
Note : Affix “-C-” - center collector pin.
Affix “-R-, -O-, -Y-, -G-” - hHE classification
Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions)
Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions)
SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)
KSC1008 NPN Epitacial Silicon Transistor
KSC1008 Rev. B
2 www.fairchildsemi.com
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