Fairchild KA5H0365R service manual
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R
KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsoluti on, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
TO-220F-4L
1
1. GND 2. Drain 3. V
CC
4. FB
Internal Block Diagram
#3 V
CC
32V
μ
A
5
#4 FB
+
7.5V
27V
©2003 Fairchild Semiconductor Corporation
−
+
−
5V
Vref
OSC
9V
1mA
2.5R
1R
OVER VOLTAGE S/D
−
+
Thermal S/D
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#2 DRAIN
SFET
Q
#1 GND
Rev.1.0.7
KA5X03XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Gate Voltage (R
=1MΩ)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
(1)
I
Continuous Drain Current (TC=25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V
(2)
E
CC,MAX
Analog Input Voltage Range V
Total Power Dissipation
Derating 0.6 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Gate Voltage (R
=1MΩ)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
(1)
I
Continuous Drain Current (TC=25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V
(2)
E
CC,MAX
Analog Input Voltage Range V
Total Power Dissipation
Derating 0.6 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T
DGR
GS
DM
D
D
AS
FB
P
D
J
A
STG
DGR
GS
DM
D
D
AS
FB
P
D
J
A
STG
650 V
±30 V
12.0 A
3.0 A
2.4 A
358 mJ
30 V
-0.3 to V
SD
75 W
+150 °C
-40 to +85 °C
-55 to +150 °C
800 V
±30 V
12.0 A
3.0 A
2.1 A
95 mJ
30 V
-0.3 to V
SD
75 W
+150 °C
-40 to +85 °C
-55 to +150 °C
DC
DC
DC
V
DC
DC
DC
V
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13μH, starting Tj = 25°C
2
KA5X03XX-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) V
Rise Time tr - 100 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 42 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 7.3 -
Gate-Drain (Miller) Charge Qgd - 13.3 -
VGS=0V, ID=50μA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 μA
=0.8Max. Rating,
V
DS
V
=0V, TC=125°C
GS
- - 200 μA
=10V, ID=0.5A - 3.6 4.5 Ω
- 720 -
=0V, VDS=25V,
V
GS
f=1MHz
DD
=0.5BV
DSS
, ID=1.0A
- 150 (MOSFET switching
time is essentially
independent of
operating temperature)
V
=10V, ID=1.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
--34
switching time is essentially
independent of
operating temperature)
pFOutput Capacitance Coss - 40 -
nS
nC
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BV
DSS
VGS=0V, ID=50μA 800 - - V
VDS=Max. Rating, VGS=0V - - 250 μA
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
Input Capacitance Ciss
DSS
R
DS(ON)VGS
=0.8Max. Rating,
V
DS
V
=0V, TC=125°C
GS
- - 1000 μA
=10V, ID=0.5A - 4.0 5.0
gfs VDS=50V, ID=0.5A 1.5 2.5 - S
- 779 -
=0V, VDS=25V,
V
GS
f=1MHz
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) V
Rise Time tr - 95 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 60 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 7.2 -
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2%
2.
1
--- -
S
=
R
Qgd - 12.1 -
=0.5BV
DD
(MOSFET switching
time is essentially
independent of
operating temperature)
V
=10V, ID=1.0A,
GS
V
=0.5BV
DS
switching time is
essentially independent of
operating temperature)
, ID=1.0A
DSS
(MOSFET
DSS
-40-
--34
Ω
pFOutput Capacitance Coss - 75.6 -
nS
nC
3
KA5X03XX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
Stop Threshold Voltage V
START
STOP
OSCILLATOR SECTION
Initial Accuracy F
Initial Accuracy F
Initial Accuracy F
Frequency Change With Temperature
(2)
OSC
OSC
OSC
--25°C≤Ta≤+85°C-±5 ±10 %
Maximum Duty Cycle Dmax
Maximum Duty Cycle Dmax
FEEDBACK SECTION
Feedback Source Current I
Shutdown Feedback Voltage V
FB
SD
Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤V
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Vref Ta=25°C 4.80 5.00 5.20 V
Vref/ΔT-25°C≤Ta≤+85°C-0.30.6mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit I
OVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection V
Thermal Shutdown Temperature (Tj)
(1)
OVP
T
SD
TOTAL STANDBY CURRENT SECTION
Start-up Current I
Operating Supply Current
(Control Part Only)
START
I
OP
VFB=GND 14 15 16 V
VFB=GND 8.4 9 9.6 V
KA5H0365R
KA5H0380R
KA5M0365R
KA5M0380R
KA5L0365R
KA5L0380R
KA5H0365R
KA5H0380R
90 100 110 kHz
61 67 73 kHz
45 50 55 kHz
62 67 72 %
KA5M0365R
KA5M0380R
KA5L0365R
72 77 82 %
KA5L0380R
Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Vfb>6.5V 6.9 7.5 8.1 V
SD
456μA
VCC>24V 25 27 29 V
- 140 160 - °C
VCC=14V - 100 170 μA
VCC<28 - 7 12 mA
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
4
Typical Performance Characteristics(SenseFET part)
0
2
5
(KA5H0365R, KA5M0365R, KA5L0365R)
KA5X03XX-SERIES
10
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom :4.5V
1
, Drain Current [A]
D
I
0.1
110
@Notes:
1. 300 μs Pulse Test
2. TC = 25 oC
VDS, Drain-Source Voltage [V]
Figure 1. Output Characteristics
7
6
5
4
, [Ω ]
3
DS( on)
R
2
1
Drain-Source On-Resistance
0
012345
Vgs= 10V
Vgs= 20V
@ Note : Tj=25
ID,Drain Curre nt [A]
10
150 oC
1
, Drain Current [A]
D
I
0.1
o
25
C
24681
-25oC
@Not es :
1. VDS = 30V
2. 300 μs Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
0.1
℃
, Reverse Drain Current [A]
DR
I
0.01
0.40.60.81.01.
VSD, Source -Dra in Vol ta ge [V]
25 oC150 oC
@Notes :
1. VGS = 0 V
2. 300 μs Pulse Test
Figure 3. On-Resistance vs. Drain Current
700
C
= Cgs + Cgd (Cds = short ed)
600
500
400
300
Capacitance [pF]
200
100
0
10
C
iss
C
oss
C
rss
0
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance vs. Drain-Source Voltage
iss
C
oss
C
rss
10
= Cds + C
= C
1
Figure 4. Source-Drain Diode Forward Voltage
10
gd
gd
8
6
4
,Gate-Source Voltage[V]
GS
2
V
0
0 5 10 15 20 2
Figure 6. Gate Charge vs. Gate-Source Volt age
VDS=130V
VDS=320V
VDS=520V
@ Note : ID=3.0A
QG,Total Gate Cha rge [n C]
5
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