KA3S0680RB/KA3S0680RFB
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Wide operatimg frequency range up to (150kHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protecton (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal extern al
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. controller IC features a trimmed oscillator,
under voltage lock out, leading edge blanking, optimized
gate turn-on/turn-off driver, thermal shut down protection,
over voltage protection, temperature compensated precision
current sources for loop compensation and fault protection
circuit. compared to discrete MOSFET and controller or
R
switching converter solution, a Fairchild Power
CC
Switch(FPS) can reduce total component count, design size,
weight and at the same time increase & efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost effective C-TV power supply.
TO-3P-5L
1
1.DRAIN 2.GND 3.V
TO-3PF-5L
1
4.FB 5.Sync
CC
Internal Block Diagram
#3 V
CC
32V
#5 Sync
5V
#4 FB
©2001 Fairchild Semiconductor Corporation
µ
2
7.5V
25V
A
1mA
−
+
6.4V
2.5R
1R
9V
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#1 DRAIN
SFET
Q
#2 GND
Rev.1.0.2
KA3S0680RB/KA3S0680RFB
Absolute Maximum Ratings
Characteristic Symbol Value Unit
GS
(1)
=1MΩ)
Maximum Drain voltage
Drain Gate voltage (R
Gate source (GND) voltage
Drain current pulsed
Single pulsed avalanche energy
Continuous drain current (T
(2)
=25°C)
C
(3)
Continuous drain current (TC=100°C)
Maximum supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25 °C
V
D,MAX
V
DGR
V
I
DM
E
I
I
V
CC,MAX
V
(watt H/S)
P
D
Derating
T
T
STG
GS
AS
D
D
FB
A
800 V
800 V
±30 V
24.0 A
DC
455 mJ
6.0 A
4.0 A
DC
DC
30 V
−0.3 to V
SD
V
150 W
1.21 W/°C
−25 to +85 °C
−55 to +150 °C
2
KA3S0680RB/KA3S0680RFB
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
Zero gate voltage drain current I
Static drain source on resistance
Forward transconductance
(note)
(note)
DSS
DSS
R
DS(ON)
gfs V
Input capacitance Ciss
Reverse transfer capacitance Crss - 42 Turn on delay time t
d(on)
Rise time tr - 150 Turn off delay time t
d(off)
Fall time tf - 130 Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge Qgs - 16 Gate drain (Miller) charge Qgd - 27 -
V
= 0V, ID = 50µA 800 - - V
GS
V
= Max., Rating,
DS
V
= 0V
GS
= 0.8Max., Rating,
V
DS
V
= 0V, TC = 125°C
GS
V
= 10V, ID = 4.0A - 1.6 2.0 W
GS
= 15V, ID = 4.0A 1.5 2.5 - S
DS
V
GS
= 0V, V
DS
= 25V,
--50µA
- - 200 mA
- 1600 -
f = 1MHz
VDD= 0.5BV
DSS
, ID= 6.0A
-60(MOSFET switching
time are essentially
independent of
- 300 operating temperature)
=10V, ID = 6.0A,
V
V
GS
DS
= 0.5BV
(MOSFET
DSS
-70switching time are
essentially independent of
operating temperature)
pFOutput capacitance Coss - 140 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
R
3
KA3S0680RB/KA3S0680RFB
Electrical Charcteristics (SFET par t) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
Stop operating voltage V
START
STOP
OSCILLATOR SECTION
Initial accuracy F
Frequency change with temperature
(2)
Maximum duty cycle D
OSC
∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %
MAX
FEEDBACK SECTION
Feedback source current I
Shutdown Feedback voltage V
Shutdown delay current I
FB
SD
delay
SYNC. & SOFT START SECTION
Soft start voltage V
Soft start current I
Sync threshold voltage
(3)
V
SYTH
SS
SS
REFERENCE SECTION
Output voltage
(1)
Temperature Stability
(1)(2)
Vref Ta = 25°C 4.80 5.00 5.20 V
Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
Over voltage protection voltage V
T
SD
OVP
TOTAL DEVICE SECTION
Start Up current I
Operating supply current
(control part only)
V
zener voltage V
CC
START
I
OP
Z
After turn on 9 10 11 V
Ta = 25°C182022kHz
Ta = 25°C, Vfb = GND 0.7 0.9 1.1 mA
Ta = 25°C, 5V ≤ Vfb ≤V
V
= 2V 4.7 5.0 5.3 V
FB
Sync & S/S = GND 0.8 1.0 1.2 mA
Vfb = 5V 6.0 6.4 6.8 V
Max. inductor current 3.52 4.00 4.48 A
V
= 14V 0.1 0.3 0.55 mA
CC
Ta = 25°C 6 12 18 mA
I
= 20mA 30 32.5 35 V
CC
-141516V
-929598%
- 6.9 7.5 8.1 V
- 140 160 - °C
-232528V
SD
1.4 1.8 2.2 µA
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
4