Fairchild J309, J310, MMBFJ309, MMBFJ310 service manual

J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier

Features

• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.

• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

• Sourced from Process 92.

• Source & Drain are interchangeable.

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

December 2010

J309
J310

G

S

D

Absolute Maximum Ratings * T

TO-92

= 25°C unless otherwise noted

a

MMBFJ309
MMBFJ310

G

SOT-23

S

Mark MMBFJ309 : 6U

D

MMBFJ310 : 6T

Symbol Parameter Value Units

V

DS

V

GS

I

GF

T

J, Tstg

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Drain-Source Voltage 25 V
Gate-Source Voltage -25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range - 55 to +150 °C

Thermal Characteristics T

Symbol Parameter

P

D

R

θJC

R

θJA

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 1

Total Device Dissipation
Derate above 25°C

Thermal Resistance, Junction to Case 127 °C/W
Thermal Resistance, Junction to Ambient 357 556 °C/W

= 25°C unless otherwise noted

a

Max.

J309-J310 *MMBFJ309-310

625

5.0

350

2.8

Units

mW

mW/°C

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

Electrical Characteristics T

Symbol

Parameter Test Condition Min. Typ. Max. Units

= 25°C unless otherwise noted

a

Off Characteristics

BV

(BR)GSS

I

GSS

Gate-Source Breakdown Voltage IG = -1.0μA, V
Gate Reverse Current VGS = -15V, V

VGS = -15V, V

V

GS(off)

Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309

310

On Characteristics

I

V

DSS

GS(f)

Zero-Gate Voltage Drain
Current*

VDS = 10V , VGS = 0 309
3101224

Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1.0 V

Small Signal Characteristics

Re

Common-Source Input

(yis)

Conductance

VDS = 10V, ID = 10mA, f = 100MHz
309
310

Re

Common-Source Output

(yos)

VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos

Conductance

G

Re

Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dB

pg

) Common-Source Forward

(yfs

VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

Transconductance

Re

Common-Gate Input

(yig)

VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

Conductance

g

Common-Source Forward

fs

Transconductance

VDS = 10V, ID = 10mA, f = 1.0kHz
309
310

g

Common-Source Output

oss

VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos

Conductance

g

Common-Gate Forward

fg

Conductance

VDS = 10V, ID = 10mA, f = 1.0kHz
309
310

g

Common-Gate Output

og

Conductance

VDS = 10V, ID = 10mA, f = 1.0kHz
309

310
C
C

NF Noise Figure V

e

Drain-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pF

dg

Source-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pF

sg

= 10V, ID = 10mA, f = 450MHz 3.0 dB

DS

Equivalent Short-Circuit Input

n

VDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz

Noise Voltage

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

= 0 -25 V

DS

= 0

DS

= 0, Ta = 125°C

DS

-1.0

-2.0

-1.0

-1.0

-4.0

-6.5

30
60

0.7

0.5

10,000

8,000

20,000
18,000

13,000
12,000

100
150

nA
μA

V
V

mA
mA

mmhos
mmhos

μmhos
μmhos

μmhos
μmhos

μmhos
μmhos

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 2