Fairchild ISL9R860PF2 service manual
ISL9R860PF2
8A, 600V Stealth™ Diode
ISL9R860PF2
April 2003
General Description
The ISL9R860PF2 is a Stealt h™ di ode optimized for
low loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (I
under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistor s. The so f t recover y
minimizes ringing, expanding the rang e of con di tions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
) and exceptionally soft recovery
RRM
and short ta phase
RRM
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . .t
< 25ns
rr
• Operating Temperature. . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diod e
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
TO-220F
K
A
o
C
CATHODE
Device Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
, T
T
J
STG
T
L
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ANODE
= 25°C unless otherwise noted
C
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
Average Rectified Forw ard Current (TC = 75oC) 8 A
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
Power Dissipation 26 W
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 150 °C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s 300 °C
ISL9R860PF2 Rev. A
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R860PF2 ISL9R860PF2 TO-220F N/A 50 Units
ISL9R860PF2
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
T
= 125°C--1.0mA
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 8A TC = 25°C-2.02.4V
F
= 125°C-1.62.0V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 30 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns
rr
Reverse Recovery Time IF = 8A,
t
rr
I
RRM
Q
Maximum Reverse Recovery Current - 3.2 - A
Reverse Recovery Charge - 50 - nC
RR
t
Reverse Recovery Time IF = 8A,
rr
S Softness Factor (t
I
RRM
Q
Maximum Reverse Recovery Current - 3.4 - A
Reverse Recovery Charge - 150 - nC
RR
Reverse Recovery Time IF = 8A,
t
rr
S Softness Factor (t
I
Q
dI
RRM
Maximum Reverse Recovery Current - 6.5 - A
Reverse Recovery Charge 195 - nC
RR
/dt Maximum di/dt during t
M
)-3.7-
b/ta
)-2.5-
b/ta
b
= 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
I
F
-28-ns
/dt = 200A/µs,
dI
F
V
= 390V, TC = 25°C
R
-77-ns
/dt = 200A/µs,
dI
F
V
= 390V,
R
= 125°C
T
C
-53-ns
/dt = 600A/µs,
dI
F
V
= 390V,
R
= 125°C
T
C
- 500 - A/µs
Thermal Characteristics
R
R
©2003 Fairchild Semiconductor Corporation ISL9R860PF2 Rev. A
Thermal Resistance Junction to Case - - 4.8 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W
θJA
Loading...