Fairchild ISL9R860PF2 service manual

ISL9R860PF2

8A, 600V Stealth™ Diode

ISL9R860PF2

April 2003

General Description

The ISL9R860PF2 is a Stealt h™ di ode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I under typical operating conditions.

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I reduce loss in switching transistor s. The so f t recover y minimizes ringing, expanding the rang e of con di tions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49409.

) and exceptionally soft recovery

RRM

and short ta phase

RRM

Features

• Soft Recovery. . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2

• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . .t

< 25ns

rr

• Operating Temperature. . . . . . . . . . . . . . . . . . 150

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diod e

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

Package Symbol

TO-220F

K

A

o

C

CATHODE

Device Maximum Ratings T

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

R

I

F(AV)

I

FRM

I

FSM

P

D

E

AVL

, T

T

J

STG

T

L

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ANODE

= 25°C unless otherwise noted

C

Peak Repetitive Reverse Voltage 600 V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V Average Rectified Forw ard Current (TC = 75oC) 8 A Repetitive Peak Surge Current (20kHz Square Wave) 16 A Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A Power Dissipation 26 W Avalanche Energy (1A, 40mH) 20 mJ Operating and Storage Temperature Range -55 to 150 °C Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s 300 °C

ISL9R860PF2 Rev. A

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

R860PF2 ISL9R860PF2 TO-220F N/A 50 Units

ISL9R860PF2

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

I

Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA

R

T

= 125°C--1.0mA

C

On State Characteristics

V

Instantaneous Forward Voltage IF = 8A TC = 25°C-2.02.4V

F

= 125°C-1.62.0V

T

C

Dynamic Characteristics

C

Junction Capacitance VR = 10V, IF = 0A - 30 - pF

J

Switching Characteristics

t

Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns

rr

Reverse Recovery Time IF = 8A,

t

rr

I

RRM

Q

Maximum Reverse Recovery Current - 3.2 - A Reverse Recovery Charge - 50 - nC

RR

t

Reverse Recovery Time IF = 8A,

rr

S Softness Factor (t

I

RRM

Q

Maximum Reverse Recovery Current - 3.4 - A Reverse Recovery Charge - 150 - nC

RR

Reverse Recovery Time IF = 8A,

t

rr

S Softness Factor (t

I

Q

dI

RRM

Maximum Reverse Recovery Current - 6.5 - A Reverse Recovery Charge 195 - nC

RR

/dt Maximum di/dt during t

M

)-3.7-

b/ta

)-2.5-

b/ta

b

= 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns

I

F

-28-ns

/dt = 200A/µs,

dI

F

V

= 390V, TC = 25°C

R

-77-ns

/dt = 200A/µs,

dI

F

V

= 390V,

R

= 125°C

T

C

-53-ns

/dt = 600A/µs,

dI

F

V

= 390V,

R

= 125°C

T

C

- 500 - A/µs

Thermal Characteristics

R R

Thermal Resistance Junction to Case - - 4.8 °C/W

θJC

Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W

θJA

Typical Performance Curves

ISL9R860PF2

16

14

12

10

8

6

, FORWARD CURRENT (A)

4

F

I

2

0

0 0.5 0.75 1 2.50.25 1.5 2 2.25

VF, FORWARD VOLTAGE (V)

175oC

150oC

125oC

25oC

100oC

1.751.25

2.75

100

10

1

, REVERSE CURRENT (µA)

R

I

0.1 100 200 300 500 600400

VR, REVERSE VOLTAGE (V)

175oC

150oC

125oC

100oC

25oC

Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage

80

VR = 390V, TJ = 125°C

70

60

50

40

30

t, RECOVERY TIMES (ns)

20

10

0

Figure 3. t

tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs

ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs

2 4 6 8 12 14

IF, FORWARD CURRENT (A)

and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt

a

10 16

90

80

70

60

50

40

30

t, RECOVERY TIMES (ns)

20

10

0

100

VR = 390V, TJ = 125°C

tb AT IF = 16A, 8A, 4A

ta AT IF = 16A, 8A, 4A

200 300 400 500 600 800 900

dIF/dt, CURRENT RATE OF CHANGE (A/µs)

700 1000

11

VR = 390V, TJ = 125°C

10

9 8 7 6 5 4 3

, MAX REVERSE RECOVERY CURRENT (A)

RRM

2

I

0

2 4 6 8 10 12 14

IF, FORWARD CURRENT (A)

dIF/dt = 800A/µs

dIF/dt = 500A/µs

dIF/dt = 200A/µs

16

Figure 5. Maximum Reverse Recovery Current vs

Forward Current

14

VR = 390V, TJ = 125°C

12

10

8

6

4

2

, MAX REVERSE RECOVERY CURRENT (A)

RRM

I

0

200 300 400 500 600 800 900

100

IF = 8A

dI

/dt, CURRENT RATE OF CHANGE (A/µs)

F

IF = 16A

IF = 4A

700 1000

Figure 6. Maximum Reverse Recovery Current vs

dI

/dt

F

Typical Performance Curves (Continued)

ISL9R860PF2

6

VR = 390V, TJ = 125°C

5

350

VR = 390V, TJ = 125°C

300

IF = 16A

250

4

IF = 16A

IF = 8A

200

IF = 8A

3

150

2

S, REVERSE RECOVERY SOFTNESS FACTOR

1

100

IF = 4A

200 300 400 500 600 800 900

700 1000

dIF/dt, CURRENT RATE OF CHANGE (A/µs)

, REVERSE RECOVERY CHARGE (nC)

100

RR

Q

50

100 700 1000200 300 400 500 600 800 900

dIF/dt, CURRENT RATE OF CHANGE (A/µs)

IF = 4A

Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Rever s e Recovery Charge vs dIF/dt

, JUNCTION CAPACITANCE (pF)

J

C

1200

1000

800

600

400

200

0

0.1 100101 VR, REVERSE VOLTAGE (V)

10

8

6

4

2

, AVERAGE FORWARD CURRENT (A)

F(AV)

0

I

T

, CASE TEMPERATURE (oC)

C

10050 150

12575

Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve

2.0 DUTY CYCLE - DESCENDING ORDER

1.0

0.5

0.2

0.1

0.05

0.02

0.1

, NORMALIZED Z

0.01

θJA

0.01

THERMAL IMPEDANCE

SINGLE PULSE

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

0.001

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

t, RECTANGULAR PULSE DURATION (s)

Figure 11. Normalized Maximum Transient Thermal Impedance

Test Circuits and Waveforms

VGE AMPLITUDE AND RG CONTROL dIF/dt t

AND t2 CONTROL I

1

V

GE

t

1

F

RG

t

2

L

DUT

MOSFET

CURRENT

SENSE

ISL9R860PF2

dI

F

I

F

dt

0

+

V

DD

-

t

rr

t

a

t

b

0.25 I

RM

I

RM

Figure 12. trr Test Circuit

I = 1A L = 40mH R < 0.1Ω

= 50V

V

DD

= 1/2LI2 [V

E

AVL

Q

= IGBT (BV

1

R(AVL)

CES

/(V

R(AVL)

> DUT V

Q1

R(AVL)

- VDD)] )

CURRENT

SENSE

LR

DUT

Figure 14. Avalanche Energy Test Circuit

Figure 13. t

Waveforms and Definitions

rr

V

AVL

+

I

V

DD

IV

L

I

L

t

0

t

1

t

2

t

Figure 15. Avalanche Current and Voltage

Waveforms

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I2

Fairchild ISL9R860PF2 service manual

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