ISL9R860P2, ISL9R860S3ST
8A, 600V Stealth™ Diode
ISL9R860P2, ISL9R860S3ST
October 2009
General Description
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
) and exceptionally soft recovery under typical
(I
RRM
operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistors. The soft recovery
and short ta phase
RRM
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Package
ANODE
CATHODE
(FLANGE)
JEDEC TO-220AC
ANODE
CATHODE
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . tb/ ta > 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Symbol
JEDEC TO-263AB
CATHODE
(FLANGE)
N/C
< 25ns
rr
K
A
Device Maximum Ratings T
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
T
, T
J
T
T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2009 Fairchild Semiconductor Corporation
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forward Current (TC = 147oC) 8 A
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
Power Dissipation 85 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
= 25°C unless otherwise noted
C
300
260
ISL9R860P2, ISL9R860S3ST Rev. C2
°C
°C
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R860P2 ISL9R860P2 TO-220AC - -
R860S3S ISL9R860S3ST TO-263AB 24mm 800
ISL9R860P2, ISL9R860S3ST
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
R
T
= 125°C - - 1.0 mA
C
On State Characteristics
Instantaneous Forward Voltage IF= 8A TC = 25°C - 2.0 2.4 V
V
F
T
= 125°C - 1.6 2.0 V
C
Dynamic Characteristics
Junction Capacitance VR= 10V, IF = 0A - 30 - pF
C
J
Switching Characteristics
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns
t
rr
t
Reverse Recovery Time IF = 8A,
rr
I
Q
Maximum Reverse Recovery Current - 3.2 - A
RRM
Reverse Recovery Charge - 50 - nC
RR
t
Reverse Recovery Time IF = 8A,
rr
S Softness Factor (t
I
Q
Maximum Reverse Recovery Current - 3.4 - A
RRM
Reverse Recovery Charge - 150 - nC
RR
t
Reverse Recovery Time IF = 8A,
rr
S Softness Factor (t
I
Q
dI
Maximum Reverse Recovery Current - 6.5 - A
RRM
Reverse Recovery Charge 195 - nC
RR
/dt Maximum di/dt during t
M
)-3.7-
b/ta
)-2.5-
b/ta
b
I
= 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns
F
-28-ns
/dt = 200A/µs,
dI
F
= 390V, TC = 25°C
V
R
-77-ns
/dt = 200A/µs,
dI
F
= 390V,
V
R
= 125°C
T
C
-53-ns
/dt = 600A/µs,
dI
F
= 390V,
V
R
= 125°C
T
C
- 500 - A/µs
Thermal Characteristics
R
R
R
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2
Thermal Resistance Junction to Case - - 1.75 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
Thermal Resistance Junction to Ambient TO-263 62 °C/W
θJA
Typical Performance Curves
ISL9R860P2, ISL9R860S3ST
16
14
12
10
8
6
, FORWARD CURRENT (A)
4
F
I
2
0
0 0.5 0.75 1 2.50.25 1.5 2 2.25
VF, FORWARD VOLTAGE (V)
175oC
150oC
125oC
25oC
100oC
1.751.25
2.75
100
10
1
, REVERSE CURRENT (µA)
R
I
0.1
100 200 300 500 600400
VR, REVERSE VOLTAGE (V)
175oC
150oC
125oC
100oC
25oC
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
80
VR = 390V, TJ = 125°C
70
60
50
40
30
t, RECOVERY TIMES (ns)
20
10
0
0
Figure 3. t
tb AT d IF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT d IF/dt = 200A/µs, 500A/µs, 800A/µs
2 4 6 8 12 14
IF, FORWARD CURRENT (A)
and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
a
10 16
90
80
70
60
50
40
30
t, RECOVERY TIMES (ns)
20
10
0
100
VR = 390V, TJ = 125°C
tb AT IF = 16A, 8A, 4A
ta AT IF = 16A, 8A, 4A
200 300 400 500 600 800 900
dI
/dt, CURRENT RATE OF CHANGE (A/µs)
F
700 1000
11
VR = 390V, TJ = 125°C
10
9
8
7
6
5
4
3
, MAX REVERSE RECOVERY CURRENT (A)
RRM
2
I
2 4 6 8 10 12 14
0
IF, FORWARD CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
16
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
14
VR = 390V, TJ = 125°C
12
10
8
6
4
2
, MAX REVERSE RECOVERY CURRENT (A)
RRM
I
0
200 300 400 500 600 800 900
100
IF = 8A
dI
/dt, CURRENT RATE OF CHANGE (A/µs)
F
IF = 16A
IF = 4A
700 1000
Figure 6. Maximum Reverse Recovery Current vs
dI
/dt
F
Typical Performance Curves (Continued)
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
6
VR = 390V, TJ = 125°C
5
350
VR = 390V, TJ = 125°C
300
IF = 16A
250
4
IF = 16A
IF = 8A
200
IF = 8A
3
150
IF = 4A
S, REVERSE RECOVERY SOFTNESS FACTOR
2
1
100
IF = 4A
200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
700 100 0
, REVERSE RECOVERY CHARGE (nC)
100
RR
Q
50
100 700 1000200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt Figure 8. Reverse Recovery Charge vs dIF/dt
, JUNCTION CAPACITANCE (pF)
C
1200
1000
J
800
600
400
200
0
0.1 100101
VR, REVERSE VOLTAGE (V)
10
8
6
4
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
150 155 165140 175160
T
, CASE TEMPERATURE (oC)
C
170145
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
1.0
0.2
0.1
0.05
0.02
, NORMALIZED
Z
0.01
0.1
θJA
THERMAL IMPEDANCE
0.01
SINGLE PULSE
-5
10
-4
10
-3
10
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
AND t2 CONTROL I
1
V
GE
t
1
F
t
2
L
DUT
CURRENT
R
G
SENSE
MOSFET
ISL9R860P2, ISL9R860S3ST
dI
F
I
F
dt
0
+
V
DD
-
t
rr
t
a
t
b
0.25 I
RM
I
RM
Figure 12. trr Test Circuit
I = 1A
L = 40mH
R < 0.1Ω
V
= 50V
DD
= 1/2LI2 [V
E
AVL
Q
= IGBT (BV
1
R(AVL)
CES
/(V
> DUT V
R(AVL)
Q1
R(AVL)
- VDD)]
)
CURRENT
SENSE
LR
DUT
Figure 14. Avalanche Energy Test Circuit
Figure 13. t
Waveforms and Definitions
rr
V
AVL
+
I
V
DD
IV
L
I
L
-
t
0
t
1
t
2
t
Figure 15. Avalanche Current and Voltage
Waveforms
©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2
Mechanical Dimensions
ISL9R860P2, ISL9R860S3ST
TO-220AC
Dimensions in Millimeters
Mechanical Dimensions
10.67
9.65
4
2
1
(2.12)
3
5.08
-A-
1.78 MAX
1.78
1.14
0.99
0.51
0.25 AB
TO-263AB
1.68
1.00
9.65
8.38
M M
ISL9R860P2, ISL9R860S3ST
12.70
9.45
10.00
(6.40)
3.80
1.05
5.08
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
0.25
3
6.22 MIN
4
2
6.86 MIN
15.88
14.61
-B-
1.65
1.14
4.83
4.06
SEE
DETAIL A
1
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M - 1994.
GAGE PLANE
0.74
0.33
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
8
0
TO254P1524X482-3N
F) FILENAME: TO263A02REV6
0.25 MAX
SEATING
PLANE
DETAIL A, ROTATED 90
(5.38)
SCALE: 2X
2.79
1.78
8
0
0.10 B
Dimensions in Millimeters
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™*
™*
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
FPS™
F-PFS™
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
tm
PDP SPM™
Power-SPM™
PowerTrench
®
®
SM
®
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
tm
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
ISL9R860P2, ISL9R860S3ST
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
www.fairchildsemi.com
Loading...