Fairchild ISL9R860P2, ISL9R860S3ST service manual

ISL9R860P2, ISL9R860S3ST

8A, 600V Stealth™ Diode

ISL9R860P2, ISL9R860S3ST

October 2009

General Description

The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current

) and exceptionally soft recovery under typical

(I

RRM

operating conditions.

This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
reduce loss in switching transistors. The soft recovery

and short ta phase

RRM

minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.

Formerly developmental type TA49409.

Package

ANODE

CATHODE
(FLANGE)

JEDEC TO-220AC

ANODE

CATHODE

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . tb/ ta > 2.5

• Fast Recovery . . . . . . . . . . . . . . . . . . . . t

• Operating Temperature . . . . . . . . . . . . . . . 175oC

• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

Symbol

JEDEC TO-263AB

CATHODE
(FLANGE)

N/C

< 25ns

rr

K

A

Device Maximum Ratings T

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

I

F(AV)

I

FRM

I

FSM

P

E

AVL

T

, T

J

T

T

PKG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2009 Fairchild Semiconductor Corporation

Peak Repetitive Reverse Voltage 600 V

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

R

Average Rectified Forward Current (TC = 147oC) 8 A

Repetitive Peak Surge Current (20kHz Square Wave) 16 A

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A

Power Dissipation 85 W

D

Avalanche Energy (1A, 40mH) 20 mJ

Operating and Storage Temperature Range -55 to 175 °C

STG

Maximum Temperature for Soldering

L

Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334

= 25°C unless otherwise noted

C

300
260

ISL9R860P2, ISL9R860S3ST Rev. C2

°C
°C

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

R860P2 ISL9R860P2 TO-220AC - -

R860S3S ISL9R860S3ST TO-263AB 24mm 800

ISL9R860P2, ISL9R860S3ST

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

I

Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA

R

T

= 125°C - - 1.0 mA

C

On State Characteristics

Instantaneous Forward Voltage IF= 8A TC = 25°C - 2.0 2.4 V

V

F

T

= 125°C - 1.6 2.0 V

C

Dynamic Characteristics

Junction Capacitance VR= 10V, IF = 0A - 30 - pF

C

J

Switching Characteristics

Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns

t

rr

t

Reverse Recovery Time IF = 8A,

rr

I

Q

Maximum Reverse Recovery Current - 3.2 - A

RRM

Reverse Recovery Charge - 50 - nC

RR

t

Reverse Recovery Time IF = 8A,

rr

S Softness Factor (t

I

Q

Maximum Reverse Recovery Current - 3.4 - A

RRM

Reverse Recovery Charge - 150 - nC

RR

t

Reverse Recovery Time IF = 8A,

rr

S Softness Factor (t

I

Q

dI

Maximum Reverse Recovery Current - 6.5 - A

RRM

Reverse Recovery Charge 195 - nC

RR

/dt Maximum di/dt during t

M

)-3.7-

b/ta

)-2.5-

b/ta

b

I

= 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns

F

-28-ns

/dt = 200A/µs,

dI

F

= 390V, TC = 25°C

V

R

-77-ns

/dt = 200A/µs,

dI

F

= 390V,

V

R

= 125°C

T

C

-53-ns

/dt = 600A/µs,

dI

F

= 390V,

V

R

= 125°C

T

C

- 500 - A/µs

Thermal Characteristics

R

R

R

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. C2

Thermal Resistance Junction to Case - - 1.75 °C/W

θJC

Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W

θJA

Thermal Resistance Junction to Ambient TO-263 62 °C/W

θJA

Typical Performance Curves

ISL9R860P2, ISL9R860S3ST

16

14

12

10

8

6

, FORWARD CURRENT (A)

4

F

I

2

0

0 0.5 0.75 1 2.50.25 1.5 2 2.25

VF, FORWARD VOLTAGE (V)

175oC

150oC

125oC

25oC

100oC

1.751.25

2.75

100

10

1

, REVERSE CURRENT (µA)

R

I

0.1
100 200 300 500 600400

VR, REVERSE VOLTAGE (V)

175oC

150oC

125oC

100oC

25oC

Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage

80

VR = 390V, TJ = 125°C

70

60

50

40

30

t, RECOVERY TIMES (ns)

20

10

0

0

Figure 3. t

tb AT d IF/dt = 200A/µs, 500A/µs, 800A/µs

ta AT d IF/dt = 200A/µs, 500A/µs, 800A/µs

2 4 6 8 12 14

IF, FORWARD CURRENT (A)

and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt

a

10 16

90

80

70

60

50

40

30

t, RECOVERY TIMES (ns)

20

10

0

100

VR = 390V, TJ = 125°C

tb AT IF = 16A, 8A, 4A

ta AT IF = 16A, 8A, 4A

200 300 400 500 600 800 900

dI

/dt, CURRENT RATE OF CHANGE (A/µs)

F

700 1000

11

VR = 390V, TJ = 125°C

10

9

8

7

6

5

4

3

, MAX REVERSE RECOVERY CURRENT (A)

RRM

2

I

2 4 6 8 10 12 14

0

IF, FORWARD CURRENT (A)

dIF/dt = 800A/µs

dIF/dt = 500A/µs

dIF/dt = 200A/µs

16

Figure 5. Maximum Reverse Recovery Current vs

Forward Current

©2009 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2

14

VR = 390V, TJ = 125°C

12

10

8

6

4

2

, MAX REVERSE RECOVERY CURRENT (A)

RRM

I

0

200 300 400 500 600 800 900

100

IF = 8A

dI

/dt, CURRENT RATE OF CHANGE (A/µs)

F

IF = 16A

IF = 4A

700 1000

Figure 6. Maximum Reverse Recovery Current vs

dI

/dt

F