Fairchild ISL9R460PF2 service manual

ISL9R460PF2

4A, 600V Stealth™ Diode

ISL9R460PF2

April 2009

General Description

The ISL9R460PF2 is a Stealth™ diode optimized for low
loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (I
under typical operating conditions.

This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.

Formerly developmental type TA49408.

) and exceptionally soft recovery

RRM

and shor t ta phase reduce loss

RRM

Features

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3

• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t

< 20ns

rr

• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

•SMPS FWD

• Snubber Diode

Package Symbol

TO-220F

K

o

C

A

CATHODE

Device Maximum Ratings T

ANODE

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

RRM

V

RWM

V

I

F(AV)

I

FRM

I

FSM

P

E

AV L

T

, T

J

T

T

PKG

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

©2009 Fairchild Semiconductor Corporation

Peak Repetitive Reverse Voltage 600 V

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

R

Average Rectified Forward Current (TC = 108°C) 4 A

Repetitive Peak Surge Current (20kHz Square Wave) 8 A

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A

Power Dissipation 22 W

D

Avalanche Energy (0.5A, 80mH) 10 mJ

Operating and Storage Temperature Range -55 to 150 °C

STG

Maximum Temperature for Soldering

L

Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334

300
260

°C
°C

ISL9R 460PF2 R ev. A1

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

R460PF2 ISL9R460PF2 TO-220F N/A 50 Units

ISL9R460PF2

Electrical Characteristics

TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

Instantaneous Reverse Current VR = 600V TC = 25°C--100µA

I

R

T

= 125°C--1.0mA

C

On State Characteristics

Instantaneous Forward Voltage IF = 4A TC = 25°C-2.02.4V

V

F

T

= 125°C-1.62.0V

C

Dynamic Characteristics

C

Junction Capacitance VR = 10V, IF = 0A - 19 - pF

J

Switching Characteristics

t

Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 17 20 ns

rr

I

= 4A, dIF/dt = 100A/µs, VR = 30V - 19 22 ns

F

t

Reverse Recovery Time IF = 4A,

rr

I

Q

Maximum Reverse Recovery Current - 2.6 - A

RRM

Reverse Recovered Charge - 22 - nC

RR

t

Reverse Recovery Time IF = 4A,

rr

S Softness Factor (t

I

Q

Maximum Reverse Recovery Current - 2.8 - A

RRM

Reverse Recovered Charge - 100 - nC

RR

t

Reverse Recovery Time IF = 4A,

rr

S Softness Factor (t

I

Q

dI

Maximum Reverse Recovery Current - 4.3 - A

RRM

Reverse Recovered Charge 110 - nC

RR

/dt Maximum di/dt during t

M

dI

/dt = 200A/µs,

F

= 390V, TC = 25°C

V

R

dI

/dt = 200A/µs,

)-4.2-

b/ta

)-3.5-

b/ta

b

F

= 390V,

V

R

= 125°C

T

C

dI

/dt = 400A/µs,

F

= 390V,

V

R

= 125°C

T

C

-17-ns

-77-ns

-54-ns

-500-A/µs

Thermal Characteristics

R

R

©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1

Thermal Resistance Junction to Case - - 5.7 °C/W

θJC

Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W

θJA

Typical Performance Curves T

= 25°C unless otherwise noted

C

ISL9R460PF2

8

7

6

5

4

3

, FORWARD CURRENT (A)

2

F

I

1

0

00.511.522.5

VF, FORWARD VOLTAGE (V)

150oC

25oC

100oC

3

600

100

10

1

, REVERSE CURRENT (µA)

R

I

0.1
100 200 300 500 600400

VR, REVERSE VOLTAGE (V)

150oC

125oC

100oC

75oC

25oC

Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage

90

VR = 390V, TJ = 125oC

80

tb AT d IF/dt = 200A/µs, 500A/µs, 800A/µs

70

60

50

40

30

t, RECOVERY TIMES (ns)

20

10

0

Figure 3. t

ta AT d IF/dt = 200A/µs, 500A/µs, 800A/µs

1234 67

IF, FORWARD CURRENT (A)

and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt

a

58

120

VR = 390V, TJ = 125oC

100

80

60

40

t, RECOVERY TIMES (ns)

ta AT IF = 8A, 4A, 2A

20

0

100

tb AT IF = 8A, 4A, 2A

200 300 400 500 600 800 900

dIF/dt, CURRENT RATE OF CHANGE (A/µs)

700 1000

8

VR = 390V, TJ = 125oC

7

6

5

4

3

, MAX REVERSE RECOVERY CURRENT (A)

RRM

I

2

1

2345678

IF, FORWARD CURRENT (A)

dIF/dt = 800A/µs

dIF/dt = 500A/µs

dIF/dt = 200A/µs

Figure 5. Maximum Reverse Recovery Current vs

Forward Current

©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1

8

VR = 390V, TJ = 125oC

7

6

5

4

3

2

, MAX REVERSE RECOVERY CURRENT (A)

RRM

I

1

100

200 300 400 500 600 800 900

IF = 4A

dIF/dt, CURRENT RATE OF CHANGE (A/µs)

IF = 8A

IF = 2A

700 1000

Figure 6. Maximum Reverse Recovery Current vs

dIF/dt