Fairchild ISL9R460PF2 service manual

ISL9R460PF2
4A, 600V Stealth™ Diode
ISL9R460PF2
April 2009
General Description
The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49408.
) and exceptionally soft recovery
RRM
and shor t ta phase reduce loss
RRM
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
< 20ns
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
•SMPS FWD
• Snubber Diode
Package Symbol
TO-220F
K
o
C
A
CATHODE
Device Maximum Ratings T
ANODE
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AV L
T
, T
J
T
T
PKG
CAUTION: Stresses above those listed in Device Maximum Ratings may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2009 Fairchild Semiconductor Corporation
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forward Current (TC = 108°C) 4 A
Repetitive Peak Surge Current (20kHz Square Wave) 8 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A
Power Dissipation 22 W
D
Avalanche Energy (0.5A, 80mH) 10 mJ
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334
300 260
°C °C
ISL9R 460PF2 R ev. A1
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R460PF2 ISL9R460PF2 TO-220F N/A 50 Units
ISL9R460PF2
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
Instantaneous Reverse Current VR = 600V TC = 25°C--100µA
I
R
T
= 125°C--1.0mA
C
On State Characteristics
Instantaneous Forward Voltage IF = 4A TC = 25°C-2.02.4V
V
F
T
= 125°C-1.62.0V
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 19 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 17 20 ns
rr
I
= 4A, dIF/dt = 100A/µs, VR = 30V - 19 22 ns
F
t
Reverse Recovery Time IF = 4A,
rr
I
Q
Maximum Reverse Recovery Current - 2.6 - A
RRM
Reverse Recovered Charge - 22 - nC
RR
t
Reverse Recovery Time IF = 4A,
rr
S Softness Factor (t
I
Q
Maximum Reverse Recovery Current - 2.8 - A
RRM
Reverse Recovered Charge - 100 - nC
RR
t
Reverse Recovery Time IF = 4A,
rr
S Softness Factor (t
I
Q
dI
Maximum Reverse Recovery Current - 4.3 - A
RRM
Reverse Recovered Charge 110 - nC
RR
/dt Maximum di/dt during t
M
dI
/dt = 200A/µs,
F
= 390V, TC = 25°C
V
R
dI
/dt = 200A/µs,
)-4.2-
b/ta
)-3.5-
b/ta
b
F
= 390V,
V
R
= 125°C
T
C
dI
/dt = 400A/µs,
F
= 390V,
V
R
= 125°C
T
C
-17-ns
-77-ns
-54-ns
-500-A/µs
Thermal Characteristics
R
R
©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1
Thermal Resistance Junction to Case - - 5.7 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W
θJA
Typical Performance Curves T
= 25°C unless otherwise noted
C
ISL9R460PF2
8
7
6
5
4
3
, FORWARD CURRENT (A)
2
F
I
1
0
00.511.522.5
VF, FORWARD VOLTAGE (V)
150oC
25oC
100oC
3
600
100
10
1
, REVERSE CURRENT (µA)
R
I
0.1 100 200 300 500 600400
VR, REVERSE VOLTAGE (V)
150oC
125oC
100oC
75oC
25oC
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
90
VR = 390V, TJ = 125oC
80
tb AT d IF/dt = 200A/µs, 500A/µs, 800A/µs
70
60
50
40
30
t, RECOVERY TIMES (ns)
20
10
0
Figure 3. t
ta AT d IF/dt = 200A/µs, 500A/µs, 800A/µs
1234 67
IF, FORWARD CURRENT (A)
and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
a
58
120
VR = 390V, TJ = 125oC
100
80
60
40
t, RECOVERY TIMES (ns)
ta AT IF = 8A, 4A, 2A
20
0
100
tb AT IF = 8A, 4A, 2A
200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
700 1000
8
VR = 390V, TJ = 125oC
7
6
5
4
3
, MAX REVERSE RECOVERY CURRENT (A)
RRM
I
2
1
2345678
IF, FORWARD CURRENT (A)
dIF/dt = 800A/µs
dIF/dt = 500A/µs
dIF/dt = 200A/µs
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1
8
VR = 390V, TJ = 125oC
7
6
5
4
3
2
, MAX REVERSE RECOVERY CURRENT (A)
RRM
I
1
100
200 300 400 500 600 800 900
IF = 4A
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
IF = 8A
IF = 2A
700 1000
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
Typical Performance Curves T
= 25°C unless otherwise noted
C
ISL9R460PF2
6
5
4
3
2
S, REVERSE RECOVERY SOFTNESS FACTOR
1
100
IF = 4A
IF = 2A
200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
VR = 390V, TJ = 125oC
IF = 8A
700 1000
Figure 7. Reverse Recovery Softness Factor vs
dI
/dt
F
1800
1600
1400
1200
1000
800
600
400
, JUNCTION CAPACITANCE (pF)
J
C
200
0
VR, REVERSE VOLTAGE (V)
1001.00.03 0.1 10
180
VR = 390V, TJ = 125oC
160
140
120
100
80
, REVERSE RECOVERY CHARGE (nC)
RR
Q
60
100 700 1000200 300 400 500 600 800 900
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
IF = 8A
IF = 4A
IF = 2A
Figure 8. Reverse Recovery Charge vs dI
5
4
3
2
1
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
100 110 120 130 140 150
TC, CASE TEMP ERATURE (OC)
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
/dt
F
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
, NORMALIZED
Z
θJC
THERMAL IMPEDANCE
0.01
NOTES:
SINGLE PULSE
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
-2
10
DUTY FACTOR: D = t1/t PEAK TJ = PDM x Z
-1
10
θJC
10
0
x R
t
1
t
2
2
+ T
θJC
C
1
10
Figure 11. Normalized Maximum Transient Thermal Impedance
©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1
Test Circuit and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt
CONT ROL I
t
1 AND t2
V
GE
t
1
F
t
2
RG
L
DUT
MOSFET
CURRENT
SENSE
ISL9R460PF2
dI
F
I
F
dt
+
V
DD
-
0
t
rr
t
a
t
b
0.25 I
RM
I
RM
Figure 12. Itrr Test Circuit
I = 0.5A L = 80mH R < 0.1
= 200V
V
DD
E
= 1/2LI2 [V
AV L
Q
= IGBT (BV
1
R(AVL)
CES
/(V
> DUT V
R(AVL)
Q
1
- VDD)]
R(AVL)
)
CURRENT
SENSE
DUT
LR
Figure 14. Avalanche Energy Test Circuit
Figure 13. t
+ V
DD
V
DD
IV
Waveforms and Definitions
rr
V
AV L
I
L
I
L
-
t
0
t
1
t
2
t
Figure 15. Avalanche Current and Voltage
Waveforms
©2009 Fairchild Semiconductor Corporation ISL9R 460PF2 R ev. A1
Mechanical Dimensions
±0.10
3.30
TO-220F 2L
10.16
±0.20
ø3.18
±0.10
±0.20
6.68
2.54
(0.70)
±0.20
ISL9R460PF2
±0.20
15.80
±0.30
9.75
[2.54
(1.80)
(6.50)
MAX1.47
0.80
2.54TYP
±0.20
±0.10
(1.00x45°)
±0.20
15.87
±0.20
2.76
±0.20
12.00
0.35
±0.10
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
0.50
+0.10 –0.05
4.70
©2009 Fairchild Semiconductor Corporation
Dimensions in Millimeters
ISL9R460PF2 Rev.A1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *
™*
Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™
®
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tm
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F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR
®
tm
PDP SPM™ Power-SPM™
®
SM
PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™
Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™
®
®
SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™
®
®
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The Power Franchise
TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™*
®
tm
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μSerDes™
®
UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™
®*
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
ISL9R460PF2
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Terms
.
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2009 Fairchild Semiconductor Corporation
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ISL9R460PF2 Rev.A1
Rev. I40
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