Fairchild ISL9R3060G2, ISL9R3060P2 service manual
ISL9R3060G2, ISL9R3060P2
30A, 600V Stealth™ Diode
ISL9R3060G2, ISL9R3060P2
May 2011
General Description
The ISL9R3060G2 and ISL9R3060P2 are Stealth™
diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (I
exceptionally soft recovery under typical operating
conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
and short ta phase reduce loss
RRM
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49411.
RRM
) and
Features
• Soft Recov er y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 1.2
• Fast Recov e ry . . . . . . . . . . . . . . . . . . . . . . . . . t
< 35ns
rr
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
CATHODE
(BOTTOM SIDE
METAL)
ANODE
CATHODE
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-220ACJEDEC STYLE 2 LEAD TO-247
K
A
o
C
Device Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2011 Fairchild Semiconductor Corporation
Peak Repetitive Reverse Voltage 600 V
Working Peak Reverse Voltage 600 V
DC Blocking Voltage 600 V
R
Average Rectified Forward Current 30 A
Repetitive Peak Surge Current (20kHz Square Wave) 70 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 325 A
Power Dissipation 200 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 175 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
ISL9R3060G2, ISL9R3060P2 Rev. C4
300
260
°C
°C
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
R3060G2 ISL9R3060G2 TO-247 - R3060P2 ISL9R3060P2 TO-220AC - -
ISL9R3060G2, ISL9R3060P2
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
Instantaneous Reverse Current VR = 600V TC = 25°C - - 100 µA
I
R
= 125°C - - 1.0 mA
T
C
On State Characteristics
Instantaneous Forward Voltage IF = 30A TC = 25°C - 2.1 2.4 V
V
F
= 125°C - 1.7 2.1 V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 120 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 27 35 ns
rr
Reverse Recovery Time IF = 30A,
t
rr
I
RRM
Q
Maximum Reverse Recovery Current - 2.9 - A
Reverse Recovery Charge - 55 - nC
RR
Reverse Recovery Time IF = 30A,
t
rr
S Softness Factor (t
I
RRM
Q
Maximum Reverse Recovery Current - 6 - A
Reverse Recovery Charge - 450 - nC
RR
Reverse Recovery Time IF = 30A,
t
rr
S Softness Factor (t
I
Q
dI
RRM
Maximum Reverse Recovery Current - 21 - A
Reverse Recovery Charge 730 - nC
RR
/dt Maximum di/dt during t
M
)-1.9-
b/ta
) - 1.25 -
b/ta
b
= 30A, dIF/dt = 100A/µs, VR = 30V - 36 45 ns
I
F
-36-ns
/dt = 200A/µs,
d
IF
V
= 390V, TC = 25°C
R
-110- ns
/dt = 200A/µs,
d
IF
V
= 390V,
R
= 125°C
T
C
-60-ns
/dt = 1000A/µs,
d
IF
V
= 390V,
R
= 125°C
T
C
- 800 - A/µs
Thermal Characteristics
R
R
R
©2011 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C4
Thermal Resistance Junction to Case - - 0.75 °C/W
θJC
Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
θJA
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
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