Fairchild ISL9N304AP3, ISL9N304AS3ST service manual

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ISL9N304AP3/ISL9N304AS3ST

N-Channel Logic Level UltraFET® Trench MOSFETs
30V, 75A, 4.5mΩ

ISL9N304AP3/ISL9N304AS3ST

February 2002

PWM Optimized

General Description

This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.

Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.

Applications

• DC/DC converters

DRAIN

(FLANGE)

GATE

SOURCE

Features

• Fast switching

•r

•r

•Q

•Q

•C

DRAIN

(FLANGE)

= 0.0036Ω (Typ), VGS = 10V

DS(ON)

= 0.0060Ω (Typ), VGS = 4.5V

DS(ON)

(Typ) = 38nC, VGS = 5V

g

(Typ) = 13nC

gd

(Typ) = 4075pF

ISS

SOURCE

DRAIN

GATE

D

G

S

TO-263 TO-220

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed Figure 4 A
Power dissipation

Derate above 25
Operating and Storage Temperature -55 to 175

= 25oC, VGS = 10V)

C

= 100oC, VGS = 4.5V) 74 A

C

= 25oC, VGS = 10V, R

C

o

C

TA = 25°C unless otherwise noted

= 43oC/W) 20 A

θJA

75 A

145

0.97

W

W/oC

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case TO-220, TO-263 1.03
Thermal Resistance Junction to Ambient TO-220, TO-263 62
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

N304AS ISL9N304AS3ST TO-263AB 330mm 24mm 800 units
N304AP ISL9N304AP3 TO-220AB Tube N/A 50

©2002 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

Rev. B, February 2002

Final D raft

ISL9N304AP3/ISL9N304AS3ST

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 25V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150

V

GS

o

--250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

I

= 75A, VGS = 10V - 0.0036 0.0045

Drain to Source On Resistance

D

I

= 74A, VGS = 4.5V - 0.0060 0.0075

D

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 830 - pF
Reverse Transfer Capacitance - 380 - pF
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 38 57 nC
Threshold Gate Charge VGS = 0V to 1V - 3.9 5.8 nC
Gate to Source Gate Charge - 11 - nC
Gate to Drain “Miller” Charge - 13 - nC

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 14 - ns
Rise Time - 77 - ns
Turn-Off Delay Time - 33 - ns
Fall Time - 20 - ns
Turn-Off Time - - 79 ns

(VGS = 4.5V)

= 15V, VGS = 0V,

V

DS

f = 1MHz

V

= 15V, ID = 20A

DD

V

= 4.5V, RGS = 2.4Ω

GS

V

DD

I

= 74A

D

= 1.0mA

I

g

= 15V

- 4075 - pF

70 105 nC

- - 137 ns

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 9 - ns
Rise Time - 67 - ns
Turn-Off Delay Time - 51 - ns
Fall Time - 19 - ns
Turn-Off Time - - 104 ns

(VGS = 10V)

= 15V, ID = 20A

V

DD

= 10V, RGS = 2.4Ω

V

GS

- - 113 ns

Unclamped Inductive Switching

t

AV

Avalanche Time ID = 3.8A, L = 3.0mH 255 - - µs

Drain-Source Diode Characteristics

I

= 74A - - 1.25 V

V

SD

t

rr

Q

RR

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 74A, dISD/dt = 100A/µs- - 27 ns

Reverse Recovered Charge ISD = 74A, dISD/dt = 100A/µs- - 16 nC

SD

= 35A - - 1.0 V

I

SD

Typical Characteristic

Final D raft

ISL9N304AP3/ISL9N304AS3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

150

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

1

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

25 50 75 100 125 150 175

V

= 10V

GS

V

= 4.5V

GS

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

-0

x R

2

2

+ T

θJC

C

-1

10

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

Figure 3. Normalized Maximum Transient Thermal Impedance

2000

1000

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE

100

MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

VGS = 10V

VGS = 5V

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Final D raft

ISL9N304AP3/ISL9N304AS3ST

Typical Characteristic

150

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

90

60

, DRAIN CURRENT (A)

D

I

TJ = 25oC

30

0

1.522.533.54

TJ = 175oC

VGS, GATE TO SOURCE VOLTAGE (V)

(Continued)

TJ = -55oC

Figure 5. Transfer Ch aracteri stics Figure 6. Saturation Character istics

10

PULSE DURATION = 80µs

9

8

7

ID = 75A

DUTY CYCLE = 0.5% MAX

150

VGS = 10V

120

90

60

, DRAIN CURRENT (A)

D

I

30

0

00.511.52
VDS, DRAIN TO SOURCE VOLTAGE (V)

2

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

VGS = 4.5V

VGS = 3.5V

VGS = 3V

TC = 25oC

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

6

, DRAIN TO SOURCE

DS(ON)

r

ID = 20A

5

ON RESISTANCE (mΩ)

4

3

246810

VGS, GATE T O SOURCE VOL TAGE (V)

Figure 7. Drain to Source On Resis tanc e vs Ga te

Voltage and Drain Current

1.4

1.2

1.0

0.8

0.6

NORMALIZED GATE

THRESHOLD VOLTAGE

0.4

0.2

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

ON RESISTANCE

1

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 75A

Figure 8. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2
ID = 250µA

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

Figure 9. Normalized Gate Thres hold Volta ge v s

Junction Temperature

©2002 Fairchild Semiconductor Corporation Rev. B, February 2002

Figure 10. Normalized Drain to Source

Breakdown Voltage vs Junction Temp er atu re