HGT1S20N60A4S9A
March 2006Data Sheet
600V, SMPS Series N-Channel IGBTs
The HGT1S20N60A4S9A is MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
o
C and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Ordering Information
PART NUMBER PACKAGE BRAND
HGT1S20N60A4S9A TO-263AB 20N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T
• Low Conduction Lo ss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Solde ring Surface Mount
Components to PC Boards
Packaging
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
C
E
= 125oC
J
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4 ,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4 ,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4 ,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4 ,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4 ,969,027
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGT1S20N60A4S9A UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Pow er Dissi pation Total at T
C
Power Dissipation Derating T
= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V
J
= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
C25
C110
CM
GES
GEM
D
STG
Maximum Lead T emperature f or Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
PKG
70 A
40 A
280 A
±20 V
±30 V
290 W
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT) IC
GE(TH) IC
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
GEP
g(ON)
d(ON)I
rI
d(OFF)I
fI
ON1
ON2
OFF
IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, V
= 0V 15 - - V
GE
VCE = 600V TJ = 25oC - - 250 µA
T
= 125oC --2.0 mA
J
= 20A,
V
GE
= 15V
T
= 25oC -1.8 2.7 V
J
T
= 125oC -1.6 2.0 V
J
= 250µA, VCE = 600V 4.5 5.5 7.0 V
VGE = ±20V - - ±250 nA
= 150oC, RG = 3Ω, VGE = 15V
J
L = 100µH, V
CE
= 600V
100 - - A
IC = 20A, VCE = 300V - 8.6 - V
IC = 20A,
= 300V
V
CE
IGBT and Diode at TJ = 25oC
= 20A
I
CE
V
= 390V
CE
=15V -73 - ns
V
GE
= 3Ω
R
G
L = 500µH
V
= 15V - 142 162 nC
GE
V
= 20V - 182 210 nC
GE
-15 - ns
-12 - ns
-32 - ns
Test Circuit (Figure 20) - 105 - µJ
- 280 350 µJ
- 150 200 µJ
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
θJC
IGBT and Diode at TJ = 125oC
I
= 20A
CE
= 390V
V
CE
= 15V - 105 135 ns
V
GE
R
= 3Ω
G
L = 500µH
Test Circuit (Figure 20)
NOTES:
2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. T his test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.
Typical Performance Curves
100
80
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
ON1
J
Unless Otherwise Specified
DIE CAPABILITY
V
= 15V
GE
120
TJ = 150oC, RG = 3Ω, V
100
-15 21 ns
-13 18 ns
-55 73 ns
- 115 - µJ
- 510 600 µJ
- 330 500 µJ
- - 0.43
is the turn-on loss of the IGBT only. E
o
C/W
ON2
as the IGBT. The diode type is specified in
= 15V, L = 100µH
GE
, DC COLLECTOR CURRENT (A)
I
60
40
20
CE
0
25
PACKAGE LIMIT
50
TC, CASE TEMPERATURE (oC)
75 100 125 150
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
80
60
40
20
0
0
100 200 300 400 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
FIGURE 1. DC COLLECTOR CURRENT vs CASE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TEMPERATURE
500
300
f
= 0.05 / (t
MAX1
f
= (PD - PC) / (E
MAX2
= CONDUCTION DISSIPATION
P
C
(DUTY FACTOR = 50%)
= 0.43oC/W, SEE NOTES
R
ØJC
TJ = 125oC, RG = 3Ω, L = 500µH, V
5
I
, OPERATING FREQUENCY (kHz)
MAX
f
100
40
d(OFF)I
10 20
, COLLECTOR TO EMITTER CURRENT (A)
CE
ON2
+ t
d(ON)I
+ E
OFF
T
V
C
GE
o
75
C
15V
)
)
= 390V
CE
30 40
50
14
12
10
8
6
4
2
, SHORT CIRCUIT WITHSTAND TIME (µs)
0
SC
t
10 11 12
VCE = 390V, RG = 3Ω, TJ = 125oC
V
GE
I
SC
t
SC
13 14
, GATE TO EMITTE R VOLTAGE (V)
15
450
400
350
300
250
200
150
100
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
EMITTER CURRENT
, PEAK SHORT CIRCUIT CURRENT (A)
I
SC
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Typical Performance Curves
100
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
80
60
40
20
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0
0.4
V
TJ = 125oC
TJ = 150oC
0.8 1.2
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
1.6 2.0 2.4 2.8 3.2
Unless Otherwise Specified (Continued)
TJ = 25oC
100
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
80
60
40
20
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 125oC
TJ = 150oC
TJ = 25oC
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTE R ON-STATE VOLTAGE
1400
RG = 3Ω, L = 500µH, VCE = 390V
1200
1000
TJ = 125oC, VGE = 12V, VGE = 15V
800
600
400
, TURN-ON ENERGY LOSS (µJ)
200
ON2
E
0
5
10 15 20 25 30 35 40
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
T 2 , VGE = 12V, VGE = 15V
= 5oC
J
800
RG = 3Ω, L = 500µH, VCE = 390V
700
600
500
TJ = 125oC, VGE = 12V OR 15V
400
300
200
, TURN-OFF ENERGY LOSS (µJ)
100
OFF
E
0
5 10 15 20 25 30 35 40
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
TJ = 25oC, VGE = 12V OR 15V
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
22
RG = 3Ω µH, VCE = 390V , L = 500
20
TJ = 25oC, TJ = 125oC, VGE = 12V
18
16
14
12
, TURN-ON DELAY TIME (ns)
10
d(ON)I
t
8
5 10 15 20 25 30 35 40
I
CE
TJ = 25oC, TJ = 125oC, VGE = 15V
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
RG = 3Ω, L = 500µH, VCE = 390V
32
28
24
20
16
, RISE TIME (ns)
rI
t
12
8
4
5 10 15 20 25 30 35 40
TJ = 25oC, TJ = 125oC, V
TJ = 25oC OR TJ = 125oC, V
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
= 12V
GE
= 15V
FIGURE 9. TURN-ON DELA Y TIME vs COLLECT OR TO FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Typical Performance Curves
120
RG = 3Ω, L = 500µH,
110
100
90
80
, TURN-OFF DELAY TIME (ns)
70
d(OFF)I
t
60
5 10 15 20 25 30 35
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
V
= 390V
CE
VGE = 12V, VGE = 15V, TJ = 125oC
= 15VGE = 12V, V V, TJ = 25oC
GE
Unless Otherwise Specified (Continued)
80
72
64
56
48
40
, FALL TIME (ns)
fI
t
32
24
16
40
5 10 15 20 25 30 35 40
RG = 3Ω, L = 500µH, VCE = 390V
TJ = 125oC, VGE = 12V OR 15V
V OR 15TJ = 25oC, VGE = 12 V
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECT OR T O FIGURE 12. FALL TIME vs COLLECT OR T O EMITTER
EMITTER CURRENT CURRENT
240
DUT Y CYCLE < 0.5%, V
PULSE DURATION = 250µs
200
160
CE
= 10V
16
14
12
10
I
= 1mA, RL = 15Ω, TJ = 25oC
G(REF)
VCE = 600V
VCE = 400V
8
6
VCE = 200V
4
, GATE TO EMITTER VOLTAGE (V)
2
GE
V
0
0 20 40 60 80 100 120 140 160
, GATE CHARGE (nC)
Q
G
FIGURE 14. GATE CHARGE WAVEFORMS
o
, TOTAL SWITCHING ENERGY LOSS (mJ)
TOTAL
E
T
= 125 C, L = 500 390V, V
J
E = E
TOTAL OFF
10
1
0.1
3
10 100
µH, VCE =
+ E
ON2
= 30A
I
CE
= 20A
I
CE
I
= 10A
CE
, GATE RESISTANCE (Ω)
R
G
GE
= 15V
1000
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
120
80
40
0
6
7 8 910
V
TJ= 25oC
TJ = 125oC
TJ= -55oC
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
1.8
RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
E
= E
1.6
TOTAL
1.4
1.2
1.0
0.8
0.6
0.4
, TOTAL SWITCHING ENERGY LOSS (mJ)
0.2
TOTAL
0
E
25
+ E
ON2
OFF
ICE = 30A
ICE = 20A
ICE = 10A
50 75 100
, CASE TEMPERATURE (oC)
T
C
11
12
125 150
FIGURE 15. TOTAL SWITCHING LOSS vs CASE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
TEMPERATURE
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Typical Performance Curves
5
FREQUENCY = 1MHz
Unless Otherwise Specified (Continued)
2.2
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
4
3
C
IES
2
2.1
2.0
1.9
ICE = 30A
ICE = 20A
C, CAPACITANCE (nF)
1
C
OES
C
RES
0
0
20 40 60 80100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.8
, COLLECTOR TO EMITTER VOLTAGE (V)
1.7
CE
8 9 10 11 12 13 14 15
V
V
, GATE TO EMITTER VOLTAGE (V)
GE
ICE = 10A
FIGURE 17. CAPA CITANCE vs COLLECTOR T O EMITTER FIGURE 18. COLLECTOR T O EMITTER ON-STATE VOLTAGE
VOLTAGE vs GATE TO EMITTER VOLTAGE
0
10
0.5
16
0.2
0.1
-1
10
0.05
0.02
0.01
-2
10
, NORMALIZED TH ERMAL RESPONSE
Z
θJC
-5
10
SINGLE PULSE
-4
10
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
L = 500
RG = 3Ω
DUT
t1, RECTANGULAR PULSE DURATION (s)
HGTG20N60A4D
DIODE TA49372
µH
+
V
= 390V
DD
-
t
1
P
D
t
2
DUTY FACTOR, D = t
PEAK T
= (P X R ) + T
J D
-3
10
-2
10
-1
10
1
X Z
θJC θJC
/ t
2
C
0
10
90%
V
GE
E
V
CE
OFF
E
10%
ON2
90%
I
CE
t
d(OFF)I
10%
t
t
fI
t
d(ON)I
rI
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
HGT1S20N60A4S9A
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discha rged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production b y nume rous equipme nt manuf acturers i n
military, industrial and consumer applicat ions, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled saf ely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the inse rtion into co nductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed b y hand from their carriers,
the hand being used should be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should ne v er b e ins erted into or r emo v e d from
circuits with power on.
5. Gate Volta ge Rating - Ne v er e xceed the gate- vol tage
rating of V
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gate s of these de vice s are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacito r due to leak age
currents or pickup.
7. Gate Protection - These devices do not ha ve an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
. Exceeding the rated VGE can result in
GEM
Operating Frequency Information
Operating freq uency information for a typical device
(Figure 3) is presented as a gui de for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
MAX1
or f
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
Deadtime (the deno minator) ha s been a rbitra rily held to 10%
of the on-state time for a 50% duty factor . Other definitions
are possible. t
d(OFF)I
and t
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is defined by f
f
MAX2
allowable dissipation (P
= (PD - PC)/(E
MAX2
) is defined by PD = (TJM - TC)/R
D
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
P
C
E
ON2
shown in Figure 21. E
. A 50% duty factor was used (Figure 3) and the
=(V
and E
D
CE xICE
OFF
) are approximate d by
C
)/2.
are defined in the switching waveforms
is the integral of the
ON2
instantaneous power loss (I
E
is the integral of the instantaneous power loss
OFF
(I
CE xVCE
calculation for E
(I
CE
) during turn-off. All tail losses are included in the
; i.e., the collector current equals zero
OFF
= 0).
) plots are possib le using
CE
; whichever is smaller at each
d(OFF)I
+ t
d(ON)I
).
are defined in Figure 21.
.
JM
+ E
OFF
x VCE) during turn-on and
CE
ON2
). The
θJC
.
©2006 Fairchild Semiconductor Corporation HGT1S20N60A4S9A Rev. A
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identif ica tion Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
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