Fairchild HUFA76404DK8T service manual

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HUFA76404DK8T
N-Channel Dual MOSFET

62V, 3.2A, 132mΩ

HUFA76404DK8T N-Channel Dual MOSFET

April 2005

Features

 r

 Q

 Low Miller Charge

 Low Q

 Optimized efficiency at high frequencies

 UIS Capability (Single Pulse and Repetitive Pulse)

 Internal R

 Qualified to AEC Q101

= 110mΩ (Typ.), V

DS(ON)

= 3.8nC (Typ.), V

g(tot)

Body Diode

RR

G

= 100Ω

= 5V, ID = 3.2A

GS

= 5V

GS

Applications

 Motor / Body Load Control

 ABS Systems

 Powertrain Management

 Injection Systems

 DC-DC converters and Off-line UPS

 Distributed Power Architectures and VRMs

 Primary Switch for 12V and 24V systems

Branding Dash

1

2

3

4

SO-8

©2005 Fairchild Semiconductor Corporation
HUFA76404DK8T Rev. B

SOURCE 1

5

SOURCE 2 (3)

(1)

GATE 1 (2)

GATE 2 (4)

DRAIN 1 (8)

DRAIN 1 (7)

DRAIN 2 (6)

DRAIN 2 (5)

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HUFA76404DK8T N-Channel Dual MOSFET

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 62 V

Gate to Source Voltage ±20 V

Drain Current

I

D

Continuous (T

Continuous (T

= 25oC, VGS = 10V, R

A

= 25oC, VGS = 5V, R

A

= 50oC/W)

θJA

= 50oC/W) 3.2 A

θJA

3.6 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 1) 128 mJ

Power dissipation 2.5 W

o

Derate above 25

C20mW/

Operating and Storage Temperature -55 to 150

Thermal Characteristics

R

θJA

R

θJA

R

θJA

Pad Area = 0.50 in2 (323 mm2) (Note 2) 50

Pad Area = 0.027 in2 (17.4 mm2) (Note 3) 170

Pad Area = 0.006 in2 (3.87 mm2) (Note 4) 183

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

76404DK8 HUFA76404DK8T SO-8 330mm 12mm 2500 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

A

o

C/W

o

C/W

o

C/W

o

C

o

C

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 62 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA1-3V

Drain to Source On Resistance

Dynamic Characteristics

C

C

C

R

Q

Q

Q

Q

Q

ISS

OSS

RSS

G

g(tot)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 80 - pF

Reverse Transfer Capacitance - 7 - pF

Gate Resistance VGS = 0.5V, f = 1MHz - 100 - Ω

Total Gate Charge at 5V VGS = 0V to 5V

Threshold Gate Charge VGS = 0V to 1V - 0.3 0.4 nC

Gate to Source Gate Charge - 0.8 - nC

Gate Charge Threshold to Plateau - 0.5 - nC

Gate to Drain “Miller” Charge - 1.7 - nC

= 55V, VGS = 0V

V

DS

= 50V, VGS = 0V,

V

DS

= 150oC

T

A

I

= 3.6A, V

D

= 3.2A, VGS = 5V - 0.110 0.132

I

D

= 25V, VGS = 0V,

V

DS

f = 1MHz

= 10V - 0.088 0.110

GS

--1

--250

- 250 - pF

-3.84.9nC

V

= 30V

DD

= 3.6A

I

D

= 1.0mA

I

g

µA

Ω

HUFA76404DK8T Rev. B

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Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 13 - ns

Rise Time - 26 - ns

Turn-Off Delay Time - 145 - ns

Fall Time - 53 - ns

Turn-Off Time - - 330 ns

GS

= 10V)

= 30V, ID = 3.6A

V

DD

= 10V, RGS = 47Ω

V

GS

Drain-Source Diode Characteristics

I

= 3.6A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 41mH, IAS = 2.5A, VDD = 62V, VGS = 10V.
2: 50oC/W measured using FR-4 board with 0.50 in2 (323 mm2) copper pad at 1 second.
3: 170oC/W measured using FR-4 board with 0.027 in2 (17.4 mm2) copper pad at 1000 seconds.
4: 183oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.

Source to Drain Diode Voltage

Reverse Recovery Time ISD= 3.6A, dISD/dt= 100A/µs- - 37 ns

Reverse Recovered Charge ISD= 3.6A, dISD/dt= 100A/µs- - 38nC

SD

= 1.8A - - 1.0 V

I

SD

HUFA76404DK8T N-Channel Dual MOSFET

- - 65 ns

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

HUFA76404DK8T Rev. B

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certificatio

n.

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Typical Characteristics T

= 25°C unless otherwise noted

A

HUFA76404DK8T N-Channel Dual MOSFET

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

THERMAL IMPEDANCE

0.01

-5

10

-4

10

-3

10

10

t, RECTANGULAR PULSE DURATION (s)

SINGLE PULSE

-2

4

V

= 10V

3

2

, DRAIN CURRENT (A)

D

I

1

R

=50oC/W

θJA

GS

V

= 5V

GS

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

R

=50oC/W

θJA

P

DM

t

1

t

θJA

10

x R

2

2

+ T

θJA

A

2

3

10

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

200

100

, PEAK CURRENT (A)

10

DM

I

VGS = 10V

3

-5

10

HUFA76404DK8T Rev. B

Figure 3. Normalized Maximum Transient Thermal Impedance

VGS = 5V

-4

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-3

10

-2

10

-1

10

t, PULSE W IDTH (s)

0

10

TA = 25oC

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I25

1

10

Figure 4. Peak Current Capability

150 - T

125

A

2

10

3

10

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