Fairchild HUFA75852G3 service manual
HUFA75852G3_F085
Dat
a Sheet December 2011
75A, 150V, 0.016 Ohm, N-Channel,
UltraFET® Power MOSFET
Packaging
JEDEC T
O-247
SOURCE
DRAIN
GAT
Features
• U
ltra Low On-Resistance
E
-r
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
• Qualified to AEC Q101
DS(
ON)
= 0.
016Ω, V
GS
= 10V
DRAIN
(TAB)
• RoHS Compliant
Ordering Inf
ormation
Symbol
D
G
S
Abso
lute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
ain to Gate Voltage (R
Dr
G
ate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Dr
ain Current
Continuous (T
Contin
lsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pu
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
ate Above 25
Der
ating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Oper
Maxi
mum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Pa
ckage Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
TE
:
NO
1. T
= 25oC to 150oC.
J
CAUT
ION: Stresses ab ove those listed in “Ab solute Maximum Ratings” may cause perman ent damage to th e device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
uous (T
C
C
= 20kΩ)
GS
o
= 2
C, VGS =
5
o
=
C, VGS =
100
o
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C .
TC = 25oC, Unle
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
ss Otherwise Specified
PART NUM
HUFA75852G3_F085 TO-247 75852G
BER PACKAGE BRAND
HUFA75852G3_F085 UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
150 V
150 V
±20 V
75
75
i
gure 4
F
500
3.33
-55 t
o 175
300
260
W/
A
A
W
o
C
o
C
o
C
o
C
product has been des igne d to me et t he e xtr eme tes t con dit ions and envir onm ent de manded by t he a utomot ive i ndu str y. Fo r a copy
This
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
©2011 Fairchild Semiconductor Corpo ration HUFA75852G3_F085 Rev. C1
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
rical Specifications
Elect
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
TC = 25oC, Un
HUFA75852G3_F085
less Otherwise Specified
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
GS(T
DS(O
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
h
ermal Resistance Junction to
T
R
Ambient
S
ITCHING SPECIFICATIONS (V
W
T
urn-On Time t
Turn-On Delay Time t
GS
= 10V)
d(O
Rise Time t
Turn-Off Delay Time t
d(O
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
DSSID
DSS
GSS
H)
N)
θJC
θJA
ON
N)
r
FF)
f
OFF
= 250µA,
VDS = 140V,
V
= 135V,
DS
VGS = ±20V -
VGS = VDS, ID = 250µA (F
ID = 75A,
TO
-247 - - 0.30
= 0V (F
V
GS
V
GS
V
GS
igure 11) 150 - - V
= 0V -
, T
= 0V
= 150oC -
C
- 1 µA
- 250 µA
- ±100 nA
igure 10) 2 - 4 V
V
V (Figure 9) - 0.013 0.016
= 10
GS
--3
= 10V,
= 2.
0Ω
, I
= 75A
D
- - 260 ns
-22-
- 151
VDD = 75V
V
GS
R
GS
(Figures 18, 19)
-82-
- 107 -
- -
o
C/W
o
0
C/W
ns
- ns
ns
ns
285 ns
Ω
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ce to Drain Diode Specifications
Sour
RAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
PA
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
g(T
g(1
g(T
OSS
RSS
gs
gd
ISS
SD
rr
RR
OT)
0)
H)
VGS = 0V
VGS = 0V
VGS = 0V
to 20V V
to 10V - 215 260 nC
to 2V - 15 17.5 nC
= 75V,
DD
= 75A,
I
D
= 1.
I
g(R
EF)
0mA
(Figures 13, 16, 17)
- 400 480 nC
-25-
-66-
VDS = 25V,
f = 1MHz
(Figure 12)
= 0V
V
GS
,
- 7690 - pF
- 1650
- 535
75A - - 1.25 V
ISD =
=
I
35A - - 1.00 V
SD
ISD =
ISD =
75A, dI
75A, dI
/d
t = 100A/µs - - 260 ns
SD
t = 100A/µs - - 1830 nC
/d
SD
nC
nC
- pF
- pF
rchild Semiconductor Corporation HUFA75852G3_F085 Rev. C1
©2011 Fai
Typical Performance Curves
HUFA75852G3_F085
1.2
1.0
0.8
0.6
0.4
0.2
OWER DISSIPATION MULTIPLIER
P
0
FIGURE
ALIZED
25 50 75 100 175
0
TC,
CASE TEMPERATURE (
125
o
C)
1. NORMALIZED POWER DISSIPA TI ON vs CASE
TEMPERATURE
2
Y CYCLE - DESCENDING ORDER
DUT
1
0.5
0.2
0.1
0.05
0.02
0.01
80
60
0V
V
= 1
GS
40
DRAIN CURRENT (A)
,
20
D
I
0
0
15
25
50
75 100 125 150
TC,
CASE TEMPERATURE (
o
C)
175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
, NORM
θJC
Z
THERMAL IMPEDANCE
2000
10
00
AK CURRENT (A)
, PE
DM
I
10
50
0.1
01
0.
-5
10
VGS = 1
T
RANSCONDUCTANCE
0
MAY LIMIT CURRENT
IN THIS REGION
-5
10
0V
NO
TES:
SINGL
-4
10
E PULSE
-3
10
t
, RECTANGULAR PULSE DURATION (s)
10
DUTY FACTOR: D = t
AK T
PE
-2
P
=
x Z
J
DM
-1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
-3
10
, PULSE WIDTH (s)
t
-2
10
-1
10
θJC
1/t2
x R
+
θJC
TC = 2
OR TEMPERATURES
F
ABOVE 25
CUR
I = I
P
DM
t
1
T
C
0
10
o
C
5
o
C DER
t
2
ATE PEAK
RENT AS FOLLOWS:
1
75 - T
25
0
10
C
0
15
1
10
1
10
FIGURE 4. PEAK CURRENT CAPABILIT Y
2011 Fairchild Semiconductor Corporation HUFA75852G3_F085 Rev. C1
©
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