Fairchild HUF75945G3, HUF75945P3, HUF75945S3ST service manual

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HUF75945G3, HUF75945P3, HUF75945S3ST

Data Sheet December 2001

38A, 200V, 0.071 Ohm, N-Channel, UltraFET® Power MOSFETs

Packaging

JEDEC TO-247

SOURCE

DRAIN

GATE

DRAIN (TAB)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE

Features

• Ultra Low On-Resistance

-r

• Simulation Models

- Temperature Compensated PSPICE® and SABER™ Electrical Models

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

• Peak Cu rrent vs Pulse Width Curve

• UIS Rating Curve

DS(ON)

= 0.071Ω, V

GS

= 10V

GATE

DRAIN (FLANGE)

SOURCE

Symbol

G

S

Absolute Maximum Ratings

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (T

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

= 25oC to 150oC.

1. T

J

CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

TC = 25oC, Unless Otherwise Specified

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75945G3 TO-247 75945G HUF75945P3 TO-220AB 75945P HUF75945S3ST TO-263AB 75945S

NOTE: When ordering, use the entire part number.

HUF75945G3,HUF75945P3,

HUF75945S3ST UNITS

DSS

DGR

GS

D D

DM

D

, T

J

STG

L

pkg

200 V 200 V ±20 V

38 27

Figure 4

310

2.07

-55 to 175

300 260

A A

W

W/oC

o

C

o

C

o

C

HUF75945G3, HUF75945P3, HUF75945S3ST

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R Thermal Resistance Junction to

Ambient

SWITCHING SPECIFICATIONS (V

GS

= 10V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q Gate Charge at 10V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

DSSID

DSS

VDS = 190V, VGS = 0V - - 1 µA V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

VGS = ±20V - - ±100 nA

TO-247, TO-220, TO-263 - - 0.48oC/W TO-247 - - 30 TO-220, TO-263 - - 62

ON

VDD = 100V, ID = 38A V

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

OSS

RSS

R (Figures 18, 19)

r

f

VGS = 0V to 10V - 118 153 nC VGS = 0V to 2V - 8 10 nC

gs gd

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

= 250µA, VGS = 0V (Figure 11) 200 - - V

= 180V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 38A, VGS = 10V (Figure 9) - 0.056 0.071 ¾

o o

- - 33 ns

= 10V,

GS GS

= 3.0Ω

-15-ns

-64-ns

-65-ns

- 80 - ns

- - 217 ns

= 0V to 20V VDD = 100V,

= 38A,

I

D

I

= 1.0mA

g(REF)

- 215 280 nC

(Figures 13, 16, 17)

-15-nC

-42-nC

- 4023 - pF

- 880 - pF

- 240 - pF

C/W C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t Reverse Recovered Charge Q

SD

rr

RR

ISD = 38A - - 1.25 V

= 19A - - 1.00 V

I

SD

ISD = 38A, dISD/dt = 100A/µs - - 281 ns ISD = 38A, dISD/dt = 100A/µs - - 2700 nC

5

HUF75945G3, HUF75945P3, HUF75945S3ST

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

150

0255075100 17

125

TC, CASE TEMPERA TURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

40

30

V

= 10V

GS

20

, DRAIN CURRENT (A)

10

D

I

0

25 50 75 100 125 150 17

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

1000

100

, PEAK CURRENT (A)

TRANSCONDUCTANCE

DM

I

MAY LIMIT CURRENT IN THIS REGION

10

-5

10

VGS = 10V

SINGLE PULSE

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

10

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

1/t2

x R

+ T

θJC

C

θJC

TC = 25oC FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

P

DM

t

1

t

0

10

o

C DERATE PEAK

175 - T

150

0

10

2

1

10

C

1

10

FIGURE 4. PEAK CURRENT CAPAB ILITY

HUF75945G3, HUF75945P3, HUF75945S3ST

Typical Performance Curves

500

100

10

, DRAIN CURRENT (A)

D

I

1

1 10 100

OPERATION IN THIS AREA MAY BE LIMITED BY r

V

DS

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

(Continued)

SINGLE PULSE TJ = MAX RATED

T

C

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

75

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

50

= 25oC

100µs

1ms

10ms

500

200

100

STARTING TJ = 150oC

10

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

1

0.001 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

- VDD)

DSS

- VDD) +1]

DSS

NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

75

VGS = 10V

V

= 5V

GS

50

VGS = 4.5V

10

25

DRAIN CURRENT (A)

D,

I

0

2345

VGS, GATE TO SOURCE VOLTAGE (V)

= 175oC

T

J

T

= -55oC

T

J

= 25oC

J

25

, DRAIN CURRENT (A)

D

I

0

0123456

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

T

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

3.5

PULSE DURATION = 80µs

3.0

DUTY CYCLE = 0.5% MAX

2.5

2.0

1.5

ON RESISTANCE

1.0

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 200 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 38A

160

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC)

= 25oC

C

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 10. NORMALIZED GA TE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

0

HUF75945G3, HUF75945P3, HUF75945S3ST

Typical Performance Curves

1.3 ID = 250µA

1.2

1.1

1.0

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.9

-80 -40 0 40 80 120 160 200 T

, JUNCTION TEMPERATURE (oC)

J

(Continued)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

10

VDD = 100V

8

10000

1000

C

OSS

C, CAPACITANCE (pF)

100

30

0.1 1.0 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V)

≅ C

DS

+ C

GD

C

V

RSS

= 0V, f = 1MHz

GS

C

= C

ISS

= C

GD

GS

+ C

GD

FIGURE 12. CAPA C ITANCE vs DRAIN TO SOURCE VOLTAGE

, GATE TO SOURCE VOLTAGE (V)

GS

V

NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and W aveforms

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

AS

R

G

6

4

WAVEFORMS IN

2

0

0 2040608010012

, GATE CHARGE (nC)

Q

g

V

DS

L

+

V

DD

-

DUT

DESCENDING ORDER: ID = 38A

= 10A

I

D

I

AS

BV

DSS

t

P

V

DS

V

DD

0V

P

I

AS

0.01Ω

0

t

AV

t

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

V

I

HUF75945G3, HUF75945P3, HUF75945S3ST

Test Circuits and W aveforms

V

DS

V

GS

I

g(REF)

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS

V

(Continued)

R

L

DUT

DS

R

L

V

DD

+

V

DD

-

V

GS

0

g(REF)

V

GS

= 2V

Q

g(TH)

Q

gs

Q

V

DS

g(10)

Q

gd

Q

g(TOT)

VGS = 10V

V

= 20

GS

0

t

ON

t

d(ON)

t

V

DS

r

90%

t

d(OFF)

t

OFF

t

f

90%

V

GS

+

V

DD

-

0

10%

DUT

R

GS

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 18. SWITCHING TIME TEST CIRCUIT FIGURE 19. SWITCHING TIME WAVEFORM

10%

90%

50%

HUF75945G3, HUF75945P3, HUF75945S3ST

PSPICE Electrical Model

.SUBCKT HUF75945 2 1 3 ; rev 13 October 2000

CA 12 8 6.6e-9 CB 15 14 6.5e-9 CIN 6 8 3.80e-9

DBODY 7 5 DBODYMOD DBREAK 5 11 D B REAK MOD DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 221 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1

IT 8 17 1 LDRAIN 2 5 1.0e-9

LGATE 1 9 8.05e-9 LSOURCE 3 7 5.8e-9

GATE

1

MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 5.0e-2 RGATE 9 20 0.77 RLDRAIN 2 5 10 RLGATE 1 9 80.5 RLSOURCE 3 7 58 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 1.8e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTE MPMOD 1

S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD

VBAT 22 19 DC 1

LGATE

RLGATE

RGATE

9

CA

-

ESG

+

EVTEMP

+

-

18 22

20

S1A

12

13

8

S1B

EGS EDS

6 8

13

10

RSLC2

6

14 13

+

6 8

-

DPLCAP

EVTHRES

+

19

8

S2A

S2B

15

CB

CIN

-

+

5 8

-

5

RSLC1

51

+

5

51

-

50 RDRAIN

21

MSTRO

14

ESLC

16

8

MMED

DBREAK

11

EBREAK

MWEAK

RSOURCE

RBREAK

17 18

IT

8

RVTHRES

LDRAIN

RLDRAIN

+

17 18

DBODY

DRAIN

2

-

LSOURCE

7

RLSOURCE

RVTEMP 19

SOURCE

3

-

VBAT

+

22

ESLC 51 50 VALUE={(V (5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*100),2.5))} .MODEL DBODYMOD D (IS = 2.8e-12 RS = 3.0e-3 XTI = 5.5 TRS1 = 3.5e-3 TRS2 = 1e-5 CJO = 2.55e-9 TT = 1.52e-7 M = 0.42)

.MODEL DBREAKMOD D (RS = 1.2e- 0TRS1 = 1e- 3TRS2 = 1e-6) .MODEL DPLCAPMOD D (CJ O = 4.6e - 9IS = 1e-30 N = 10 M = 0.9) .MODEL MMEDMO D N MOS (VTO = 3.05 K P = 2.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.77) .MODEL MSTR OMOD NMOS (VTO = 3.55 KP = 100 IS = 1e-3 0 N = 1 0 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 2.69 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.70 ) .MODEL RBREAKMOD RES (TC1 =1.27e- 3TC2 = 1.0e-6) .MODEL RDRAINMOD RES (TC1 = 9.90e-3 TC2 = 3.60e-5) .MODEL RSLCMOD RES (TC1 = 3.0e-3 TC2 = 1.0e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6) .MODEL RVTHRESMOD RES (TC1 = -2.90e-3 TC2 = -1.10e-5) .MODEL RVTEMPMOD RES (TC1 = -2.80e- 3TC2 = 1.70e-7)

.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -4.5) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -5.5) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.3 VOFF= 0.4) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VO N = 0.4 VOFF= -0.3)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

HUF75945G3, HUF75945P3, HUF75945S3ST

SABER Electrical Model

REV 13 October 2000 template huf75945 n2,n1,n3

electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl = 2.8e-12, rs = 3.0e-3, xti = 5.5, trs1 = 3.5e-3, trs2 = 1.0e-5, cjo = 2.55e -9, tt = 1.52e-7, m = 0.42) dp..model dbreakmod = (rs = 1.2, trs1 = 1.0e-3, trs2 = 1.0e-6) dp..model dplcapmod = (cjo = 4.6e-9, isl = 10e-30, nl=10, m = 0.9) m..model mmedmod = (type=_n, vto = 3.05, kp = 2.5, is = 1e-30, tox = 1) m..model mstrongmod = (type=_n, vto = 3.55, kp = 100, is = 1e-30, tox = 1) m..model mweakmod = (type=_n, vto = 2.69, kp = 0.05, is = 1e-30, tox = 1, rs=0.1) sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -5.5, voff = -4.5) sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -4.5, voff = -5.5) sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.3, voff = 0.4) sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.4, voff = -0.3)

c.ca n12 n8 = 6.6e-9 c.cb n15 n14 = 6.5e-9 c.cin n6 n8 = 3.8e-9

dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod

i.it n8 n17 = 1 l.ldrain n2 n5 = 1.00e-9

l.lgate n1 n9 = 8.05e-9 l.lsource n3 n7 = 5.80e-9

GATE

LGATE

1

RLGATE

RGATE

9

m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u

res.rbreak n17 n18 = 1, tc1 = 1.27e-3, tc2 = 1.00e-6 res.rdrain n50 n16 = 5.0e-2, tc1 = 9.9e-3, tc2 =3.6e-5

12

res.rgate n9 n20 = 0.77 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 80.5 res.rlsource n3 n7 = 58 res.rslc1 n5 n51= 1e-6, tc1 = 3e-3, tc2 = -1.0e-6

CA

res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 1.8e-3, tc1 = 1.0e-3, tc2 =1e-6 res.rvtemp n18 n19 = 1, tc1 = -2.8e-3, tc2 = 1.70e-6 res.rvthres n22 n 8 = 1, tc1 = -2.9e-3, tc2 = 1.1e-5

spe.ebreak n11 n7 n17 n18 = 221 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc =1

ESG

EVTEMP +

18 22

20

S1A

13

S1B

EGS EDS

DPLCAP

10

RSLC2

-

6 8

EVTHRES

+

6

-

S2A

14 13

8

S2B

13

+

6 8

-

5

RSLC1

51

ISCL

MMED

DBREAK

MWEAK

EBREAK

RSOURCE

RBREAK

17 18

IT

8

RVTHRES

50 RDRAIN

16

21

-

19

8

MSTRO

CIN

15

CB

8

14

+

5 8

-

LDRAIN

RLDRAIN

11

+

17 18

-

7

RLSOURCE

RVTEMP 19

-

+

22

DBODY

LSOURCE

VBAT

DRAIN

2

SOURCE

3

equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6*100))** 2.5)) } }

SPICE Thermal Model

REV 13 October 2000

HUF75945T

CTHERM1 th 6 6.45e-3 CTHERM2 6 5 3.00e-2 CTHERM3 5 4 1.40e-2 CTHERM4 4 3 1.65e-2 CTHERM5 3 2 4.85e-2 CTHERM6 2 tl 1.00e-1

RTHERM1 th 6 3.24e-3 RTHERM2 6 5 8.08e-3 RTHERM3 5 4 2.28e-2 RTHERM4 4 3 1.00e-1 RTHERM5 3 2 1.10e-1 RTHERM6 2 tl 1.40e-1

HUF75945G3, HUF75945P3, HUF75945S3ST

RTHERM1

RTHERM2

JUNCTION

th

CTHERM1

6

CTHERM2

5

SABER Thermal Model

SABER thermal model HUF75945T template thermal_model th tl

thermal_c th, tl { ctherm.ctherm1 th 6 = 6.45e-3 ctherm.ctherm2 6 5 = 3.00e-2 ctherm.ctherm3 5 4 = 1.40e-2 ctherm.ctherm4 4 3 = 1.65e-2 ctherm.ctherm5 3 2 = 4.85e-2 ctherm.ctherm6 2 tl = 1.00e-1

rtherm.rtherm1 th 6 = 3.24e-3 rtherm.rtherm2 6 5 = 8.08e-3 rtherm.rtherm3 5 4 = 2.28e-2 rtherm.rtherm4 4 3 = 1.00e-1 rtherm.rtherm5 3 2 = 1.10e-1 rtherm.rtherm6 2 tl = 1.40e-1 }

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM3

4

CTHERM4

3

CTHERM5

2

CTHERM6

tl

CASE

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