Fairchild HUF75945G3, HUF75945P3, HUF75945S3ST service manual
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HUF75945G3, HUF75945P3, HUF75945S3ST
Data Sheet December 2001
38A, 200V, 0.071 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE
Features
• Ultra Low On-Resistance
-r
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
DS(ON)
= 0.071Ω, V
GS
= 10V
GATE
DRAIN
(FLANGE)
SOURCE
Symbol
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
= 25oC to 150oC.
1. T
J
CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
TC = 25oC, Unless Otherwise Specified
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75945G3 TO-247 75945G
HUF75945P3 TO-220AB 75945P
HUF75945S3ST TO-263AB 75945S
NOTE: When ordering, use the entire part number.
HUF75945G3,HUF75945P3,
HUF75945S3ST UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
200 V
200 V
±20 V
38
27
Figure 4
310
2.07
-55 to 175
300
260
A
A
W
W/oC
o
C
o
C
o
C
©2001 Fairchild Semiconductor Corpo ration HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
HUF75945G3, HUF75945P3, HUF75945S3ST
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
VDS = 190V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
VGS = ±20V - - ±100 nA
TO-247, TO-220, TO-263 - - 0.48oC/W
TO-247 - - 30
TO-220, TO-263 - - 62
ON
VDD = 100V, ID = 38A
V
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(10)
g(TH)
ISS
OSS
RSS
R
(Figures 18, 19)
r
f
VGS = 0V to 10V - 118 153 nC
VGS = 0V to 2V - 8 10 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 12)
= 250µA, VGS = 0V (Figure 11) 200 - - V
= 180V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 38A, VGS = 10V (Figure 9) - 0.056 0.071 ¾
o
o
- - 33 ns
= 10V,
GS
GS
= 3.0Ω
-15-ns
-64-ns
-65-ns
- 80 - ns
- - 217 ns
= 0V to 20V VDD = 100V,
= 38A,
I
D
I
= 1.0mA
g(REF)
- 215 280 nC
(Figures 13, 16, 17)
-15-nC
-42-nC
- 4023 - pF
- 880 - pF
- 240 - pF
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
SD
rr
RR
ISD = 38A - - 1.25 V
= 19A - - 1.00 V
I
SD
ISD = 38A, dISD/dt = 100A/µs - - 281 ns
ISD = 38A, dISD/dt = 100A/µs - - 2700 nC
5
5
HUF75945G3, HUF75945P3, HUF75945S3ST
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
150
0255075100 17
125
TC, CASE TEMPERA TURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
40
30
V
= 10V
GS
20
, DRAIN CURRENT (A)
10
D
I
0
25 50 75 100 125 150 17
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
1000
100
, PEAK CURRENT (A)
TRANSCONDUCTANCE
DM
I
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 10V
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-4
10
-3
10
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
1/t2
x R
+ T
θJC
C
θJC
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
P
DM
t
1
t
0
10
o
C DERATE PEAK
175 - T
150
0
10
2
1
10
C
1
10
FIGURE 4. PEAK CURRENT CAPAB ILITY
©2001 Fairchild Semiconductor Corpo ration HUF75945G3, HUF75945P3, HUF75945S3ST Rev. B
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