Fairchild HUF75939P3, HUF75939S3ST service manual
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Data Sheet December 2001
22A, 200V, 0.125 Ohm, N-Channel,
UltraFET® Power MOSFET
HUF75939P3, HUF75939S3ST
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GAT
GATE
SOURCE
DRAIN
(FLANGE)
Features
• Ultra Low On-Resistance
•r
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
= 0.125Ω, V
DS(ON)
Electrical Models
GS
= 10V
- Spice and SABER© Thermal Impedance Models
DRAIN
(FLANGE)
HUF75939P3
HUF75939S3ST
• www.fairchildsemi.com
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
Symbol
D
G
S
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Tech Brief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE:
= 25oC to 150oC.
1. T
J
CAUTION: Stresses above those listed in “Absolut e Maximum Ratings” may cause per mane nt dama ge to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 25oC, Unless Otherwise Specified
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75939P3 TO-220AB 75939P
HUF75939S3ST TO-263AB 75939S
NOTE: When ordering, use the entire part number.
HUF75939P3, HUF75939S3ST UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
200 V
200 V
±20 V
22
16
Figure 4
180
1.2
-55 to 175
300
260
A
A
W
W/oC
o
C
o
C
o
C
©2001 Fairchild Semiconductor Corpo ration HUF75939P3, HUF75939S3ST Rev. B
HUF75939P3, HUF75939S3ST
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
VDS = 190V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
VGS = ±20V - - ±100 nA
TO-220 and TO-263 - - 0.83oC/W
VDD = 100V, ID = 22A
V
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(10)
g(TH)
ISS
OSS
RSS
R
(Figures 18, 19)
r
f
VGS = 0V to 10V - 64 83 nC
VGS = 0V to 2V - 5 7 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
= 250µA, VGS = 0V (Figure 11) 200 - - V
= 180V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 22A, VGS = 10V (Figure 9) - 0.102 0.125 Ω
--62oC/W
- - 57 ns
= 10V,
GS
GS
= 4.7Ω
-12-ns
-26-ns
-65-ns
-33-ns
- - 147 ns
= 0V to 20V VDD = 100V,
= 22A,
I
D
I
= 1.0mA
g(REF)
- 117 152 nC
(Figures 13, 16, 17)
-9-nC
-24-nC
- 2200 - pF
- 400 - pF
- 120 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUF75939P3, HUF75939S3ST Rev. B
SD
rr
RR
ISD = 22A - - 1.25 V
= 11A - - 1.00 V
I
SD
ISD = 22A, dISD/dt = 100A/µs - - 240 ns
ISD = 22A, dISD/dt = 100A/µs - - 1500 nC
Typical Performance Curves
HUF75939P3, HUF75939S3ST
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 255075100 175
125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIP ATION vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25 50 75 100 125 150 175
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
-2
10
t, RECTANGULAR PULSE DURATION (s)
V
GS
TC, CASE TEMPERATURE (oC)
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-1
10
θJC
10
0
= 10V
2
x R
θJC
t
1
t
2
+ T
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
, PEAK CURRENT (A)
I
DM
300
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 10V
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
10
FIGURE 4. PEAK CURRENT CAPAB ILITY
©2001 Fairchild Semiconductor Corpo ration HUF75939P3, HUF75939S3ST Rev. B
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