Fairchild HUF75925P3, HUF75925D3ST service manual
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Data Sheet December 2001
11A, 200V, 0.275 Ohm, N-Channel,
UltraFET® Power MOSFETs
HUF75925P3, HUF75925D3ST
Packaging
JEDEC TO-220AB JEDEC TO-252AA
HUF75925P3
Symbol
SOURCE
DRAIN
DRAIN
(FLANGE)
G
GATE
Features
• Ultra Low On-Resistance
GATE
SOURCE
DRAIN
(FLANGE
-r
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
DS(ON)
= 0.275Ω, V
GS
= 10V
- www.fairchildsemi.com
HUF75925D3ST
• Peak Cu rrent vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
D
S
PART NUMBER PACKAGE BRAND
HUF75925P3 TO-220AB 75925P
HUF75925D3ST TO-252AA 75925D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (T
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE:
1. T
= 25oC to 150oC.
J
CAUTION: Stresses above those listed in “ Absolute M aximum Ratings” may cause perm anent damage to th e device. This is a stress onl y rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corpo ration HUF75925P3, HUF75925D3ST Rev. B
C
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 25oC, Unless Otherwise Specified
HUF75925P3,
HUF75925D3ST UNITS
DSS
DGR
GS
D
D
DM
D
, T
J
STG
L
pkg
200 V
200 V
±20 V
11
8
Figure 4
100
1.5
-55 to 175
300
260
A
A
W
W/oC
o
C
o
C
o
C
HUF75925P3, HUF75925D3ST
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
VDS = 190V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
VGS = ±20V - - ±100 nA
TO-220 - - 1.5
TO-220 - - 62
TO-252 - - 100
ON
VDD = 100V, ID = 11A
V
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(10)
g(TH)
ISS
OSS
RSS
R
(Figures 18, 19)
r
f
VGS = 0V to 10V - 32 42 nC
VGS = 0V to 2V - 2.0 3.2 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
= 250µA, VGS = 0V (Figure 11) 200 - - V
= 180V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 11A, VGS = 10V (Figure 9) - 0.220 0.275 ¾
o
o
o
- - 45 ns
= 10V,
GS
GS
= 12Ω
-9-ns
-21-ns
-60-ns
- 27 - ns
- - 130 ns
= 0V to 20V VDD = 100V,
= 11A,
I
D
I
= 1.0mA
g(REF)
-5978nC
(Figures 13, 16, 17)
-4.0-nC
-11-nC
- 1030 - pF
- 120 - pF
-15-pF
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TE ST CONDIT IONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
©2001 Fairchild Semiconductor Corpo ration HUF75925P3, HUF75925D3ST Rev. B
SD
rr
RR
ISD = 11A - - 1.25 V
= 5A - - 1.00 V
I
SD
ISD = 11A, dISD/dt = 100A/µs - - 190 ns
ISD = 11A, dISD/dt = 100A/µs - - 940 nC
Typical Performance Curves
5
5
1
HUF75925P3, HUF75925D3ST
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
150
0255075100 17
125
TC, CASE TEMPERA TURE (oC)
FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
12
9
V
= 10V
GS
6
, DRAIN CURRENT (A)
3
D
I
0
25 50 75 100 125 150 17
TC, CASE TEMPERA TURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
0.01
-5
10
200
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 10V
NOTES:
SINGLE PULSE
-4
10
-3
10
10
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
-1
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
θJC
1/t2
x R
+ T
C
θJC
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
10
P
DM
t
1
t
0
10
o
C DERATE PEAK
175 - T
C
150
0
2
1
10
10
FIGURE 4. PEAK CURRENT CAPAB ILIT Y
©2001 Fairchild Semiconductor Corpo ration HUF75925P3, HUF75925D3ST Rev. B
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