H11L1M, H11L2M, H11L3M — 6-Pin DIP Optocoupler
September 2009
H11L1M, H11L2M, H11L3M
6-Pin DIP Optocoupler
Features
■
High data rate, 1MHz typical (NRZ)
Free from latch up and oscilliation throughout voltage
■
and temperature ranges.
■
Microprocessor compatible drive
Logic compatible output sinks 16mA at 0.4V
■
maximum
Guaranteed on/off threshold hysteresis
■
■
Wide supply voltage capability, compatible with all
popular logic systems
Underwriters Laboratory (UL) recognized—
■
file #E90700, Volume 2
■
VDE recognized – File#102497 – Add option V
(e.g., H11LIVM)
Applications
Logic to logic isolator
■
■
Programmable current level sensor
Line receiver—eliminate noise and transient problems
■
■
A.C. to TTL conversion—square wave shaping
Digital programming of power supplies
■
■
Interfaces computers with peripherals
Description
The H11LXM series has a high speed integrated circuit
detector optically coupled to a gallium-arsenide infrared
emitting diode. The output incorporates a Schmitt
trigger, which provides hysteresis for noise immunity and
pulse shaping. The detector circuit is optimized for
simplicity of operation and utilizes an open collector
output for maximum application flexibility.
Schematic Package Outlines
ANODE
CATHODE
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11L1M, H11L2M, H11L3M Rev. 1.0.3
1
2
3
V
6
CC
5 GND
V
4
O
Truth Table
Input Output
HL
LH
H11L1M, H11L2M, H11L3M — 6-Pin DIP Optocoupler
Absolute Maximum Ratings
(T
= 25°C unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A
F
P
D
DETECTOR
P
D
V
O
V
CC
I
O
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +85 °C
Lead Solder Temperature 260 for 10 sec °C
Total Device Power Dissipation @ 25°C 250 mW
Derate Above 25°C 2.94 mW/°C
Continuous Forward Current 60 mA
Reverse Voltage 6 V
LED Power Dissipation 25°C Ambient 120 mW
Derate Linearly From 25°C 1.41 mW/°C
Detector Power Dissipation @ 25°C 150 mW
Derate Linearly from 25°C 2.0 mW/°C
V
Allowed Range 0 to 16 V
45
V
Allowed Range 3 to 16 V
65
I
Output Current 50 mA
4
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11L1M, H11L2M, H11L3M Rev. 1.0.3 2
H11L1M, H11L2M, H11L3M — 6-Pin DIP Optocoupler
Electrical Characteristics
(T
= 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
V
I
R
C
DETECTOR
V
CC
I
CC(off)
I
OH
Parameters
Input Forward Voltage I
F
Reverse Current V
Capacitance V = 0, f = 1.0MHz All 100 pF
J
Operating Voltage Range All 3 15 V
Supply Current I
Output Current, High I
Transfer Characteristics
Symbol
DC CHARACTERISTICS
I
CC(on)
V
OL
I
F(on)
I
F(off)
I
/I
F(off)
AC CHARACTERISTICS, Switching Speed
t
on
t
t
off
t
Parameter
Supply Current I
Output Voltage, low R
Tu r n-On Threshold Current
(1)
Tu r n-Off Threshold Current R
Hysteresis Ratio R
F(on)
Tu r n-On time R
Fall Time R
f
Tu r n-Off Time R
Rise time R
r
Data Rate All 1.0 MHz
Test Conditions Device Min. Typ. Max. Units
= 10mA All 1.2 1.5 V
F
I
= 0.3mA 0.75 1.0
F
= 3V All 10 µA
R
= 0, V
F
= 0, V
F
= 5V All 1.6 5.0 mA
CC
= V
CC
= 15V All 100 µA
O
Test Conditions Device Min. Typ. Max. Units
= 10mA, V
F
= 270 Ω ,V
L
I
= I
F
F(on)
R
= 270 Ω , V
L
= 270 Ω , V
L
= 270 Ω , V
L
= 270 Ω , V
L
I
= I
F
F(on)
= 270 Ω , V
L
I
= I
F
F(on)
= 270 Ω , V
L
I
= I
F
F(on)
= 270 Ω , V
L
I
= I
F
F(on)
= 5V All 1.6 5.0 mA
CC
CC
= 5V,
All 0.2 0.4 V
max.
= 5V H11L1M 1.6 mA
CC
H11L2M 10.0
H11L3M 5.0
= 5V All 0.3 1.0 mA
CC
= 5V All 0.50 0.75 0.90
CC
, T
, T
, T
, T
CC
= 25°C
A
CC
= 25°C
A
= 5V,
CC
= 25°C
A
CC
= 25°C
A
= 5V,
= 5V,
= 5V,
All 1.0 4 µs
All 0.1 µs
All 1.2 4 µs
All 0.1 µs
Isolation Characteristics
Symbol
V
ISO
C
ISO
R
ISO
Note:
1. Maximum I
require the LED to be driven at a current greater than 1.6mA to guarantee the device will turn on. A 10% guard band is
recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 60mA.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11L1M, H11L2M, H11L3M Rev. 1.0.3 3
Parameter
Test Conditions Min. Typ. Max. Units
Input-Output Isolation Voltage t =1 sec. 7500 V
Isolation Capacitance V
Isolation Resistance V
is the maximum current required to trigger the output. For example, a 1.6mA maximum trigger current would
F(ON)
= 0V, f = 1MHz 0.4 0.6 pF
I-O
= ±500 VDC 10
I-O
11
PEAK
Ω