Fairchild H11L1M, H11L2M, H11L3M service manual
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
September 2009
H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
■
High BV
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
■
High sensitivity to low input current
(Min. 500% CTR at I
Low leakage current at elevated temperature
■
(Max. 100µA at 80°C)
■
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
■
IEC 60747-5-2 approved (ordering option V)
CEO
= 1mA)
F
General Description
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
Applications
■
CMOS logic interface
Telephone ring detector
■
■
Low input TTL interface
Power supply isolation
■
■
Replace pulse transformer
Schematic Package Outlines
N/C
1
2
3
ANODE
CATHODE
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4
BASE
6
COLLECTOR
5
4
EMITTER
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A
F
P
D
DETECTOR
V
CEO
P
D
Storage Temperature -40 to +150 °C
Operating Temperature -40 to +100 °C
Lead Solder Temperature (Wave Solder) 260 for 10 sec °C
Total Device Power Dissipation @ T
= 25°C 260 mW
A
Derate Above 25°C 3.5 mW/°C
Forward Input Current 60 mA
Reverse Input Voltage 6.0 V
LED Power Dissipation @ T
= 25°C 100 mW
A
Derate Above 25°C 1.8 mW/°C
Collector-Emitter Voltage
H11G1M 100
V
H11G2M 80
H11G3M 55
Photodetector Power Dissipation @ T
= 25°C 200 mW
A
Derate Above 25°C 2.67 mW/°C
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 2
∆
∆
≤
Ω
(T
Electrical Characteristics
= 25°C unless otherwise specified.)
A
Individual Component Characteristics
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
BV
C
DETECTOR
BV
BV
BV
I
CEO
Forward Voltage I
F
V
Forward Voltage
F
Temp. Coefficient
T
A
Reverse Breakdown
R
= 10mA All 1.3 1.50 V
F
All -1.8 mV/°C
I
= 10µA All 3.0 25 V
R
Voltage
Junction Capacitance V
J
I
Reverse Leakage
R
= 0V, f = 1MHz All 50 pF
F
V
= 1V, f = 1MHz 65
F
V
= 3.0V All 0.001 10 µA
R
Current
Breakdown Voltage
CEO
Collector to Emitter
I
= 1.0mA, I
C
= 0 H11G1M 100 V
F
H11G2M 80
H11G3M 55
Collector to Base I
CBO
= 100µA H11G1M 100 V
C
H11G2M 80
H11G3M 55
Emitter to Base All 7 10 V
EBO
Leakage Current
Collector to Emitter
V
CE
V
CE
V
CE
V
CE
V
CE
= 80V, I
= 60V, I
= 30V, I
= 80V, I
= 60V, I
= 0 H11G1M 100 nA
F
= 0 H11G2M
F
= 0 H11G3M
F
= 0, T
F
F
= 80°C H11G1M 100 µA
A
= 0, T
= 80°C H11G2M
A
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Transfer Characteristics
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
EMITTER
CTR Current Transfer
Ratio, Collector to
Emitter
V
CE(SAT)
Saturation Voltage I
I
= 10mA, V
F
I
= 1mA, V
F
= 16mA, I
F
I
= 1mA, I
F
I
= 20mA, I
F
= 1V H11G1M/2M 100 (1000) mA (%)
CE
= 5V H11G1M/2M 5 (500)
CE
H11G3M
= 50mA H11G1M/2M 0.85 1.0 V
C
= 1mA H11G1M/2M 0.75 1.0
C
= 50mA H11G3M 0.85 1.2
C
2 (200)
SWITCHING TIMES
t
ON
t
OFF
Tu r n-on Time
Tu r n-off Time
R
= 100 Ω , I
L
= 5V, f ≤ 30Hz,
V
CE
Pulse Width
= 10mA,
F
300µs
All 5
All 100
µs
µs
Isolation Characteristics
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units
V
ISO
R
ISO
C
ISO
*All Typical values at T
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 3
Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V
Isolation Resistance V
= 500 VDC All 10
I-O
11
AC
PEAK
Isolation Capacitance f = 1MHz All 0.2 pF
= 25°C
A
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