Datasheet H11L1M, H11L2M, H11L3M Datasheet (Fairchild)

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

September 2009

H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers

Features

■

High BV
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M

■

High sensitivity to low input current
(Min. 500% CTR at I

Low leakage current at elevated temperature

■

(Max. 100µA at 80°C)

■

Underwriters Laboratory (UL) recognized
File # E90700, Volume 2

■

IEC 60747-5-2 approved (ordering option V)

CEO

= 1mA)

F

General Description

The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an inte­gral base-emitter resistor to optimize elevated tempera­ture characteristics.

Applications

■

CMOS logic interface
Telephone ring detector

■

■

Low input TTL interface
Power supply isolation

■

■

Replace pulse transformer

Schematic Package Outlines

N/C

1

2

3

ANODE

CATHODE

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4

BASE

6

COLLECTOR

5

4

EMITTER

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A

F

P

D

DETECTOR

V

CEO

P

D

Storage Temperature -40 to +150 °C

Operating Temperature -40 to +100 °C

Lead Solder Temperature (Wave Solder) 260 for 10 sec °C

Total Device Power Dissipation @ T

= 25°C 260 mW

A

Derate Above 25°C 3.5 mW/°C

Forward Input Current 60 mA

Reverse Input Voltage 6.0 V

LED Power Dissipation @ T

= 25°C 100 mW

A

Derate Above 25°C 1.8 mW/°C

Collector-Emitter Voltage
H11G1M 100

V

H11G2M 80
H11G3M 55

Photodetector Power Dissipation @ T

= 25°C 200 mW

A

Derate Above 25°C 2.67 mW/°C

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 2

∆

∆

≤

Ω

(T

Electrical Characteristics

= 25°C unless otherwise specified.)

A

Individual Component Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

BV

C

DETECTOR

BV

BV

BV

I

CEO

Forward Voltage I

F

V

Forward Voltage

F

Temp. Coefficient

T

A

Reverse Breakdown

R

= 10mA All 1.3 1.50 V

F

All -1.8 mV/°C

I

= 10µA All 3.0 25 V

R

Voltage
Junction Capacitance V

J

I

Reverse Leakage

R

= 0V, f = 1MHz All 50 pF

F

V

= 1V, f = 1MHz 65

F

V

= 3.0V All 0.001 10 µA

R

Current

Breakdown Voltage

CEO

Collector to Emitter

I

= 1.0mA, I

C

= 0 H11G1M 100 V

F

H11G2M 80
H11G3M 55

Collector to Base I

CBO

= 100µA H11G1M 100 V

C

H11G2M 80
H11G3M 55

Emitter to Base All 7 10 V

EBO

Leakage Current
Collector to Emitter

V

CE

V

CE

V

CE

V

CE

V

CE

= 80V, I
= 60V, I
= 30V, I
= 80V, I
= 60V, I

= 0 H11G1M 100 nA

F

= 0 H11G2M

F

= 0 H11G3M

F

= 0, T

F

F

= 80°C H11G1M 100 µA

A

= 0, T

= 80°C H11G2M

A

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

EMITTER

CTR Current Transfer

Ratio, Collector to
Emitter

V

CE(SAT)

Saturation Voltage I

I

= 10mA, V

F

I

= 1mA, V

F

= 16mA, I

F

I

= 1mA, I

F

I

= 20mA, I

F

= 1V H11G1M/2M 100 (1000) mA (%)

CE

= 5V H11G1M/2M 5 (500)

CE

H11G3M

= 50mA H11G1M/2M 0.85 1.0 V

C

= 1mA H11G1M/2M 0.75 1.0

C

= 50mA H11G3M 0.85 1.2

C

2 (200)

SWITCHING TIMES

t

ON

t

OFF

Tu r n-on Time
Tu r n-off Time

R

= 100 Ω , I

L

= 5V, f ≤ 30Hz,

V

CE

Pulse Width

= 10mA,

F

300µs

All 5
All 100

µs
µs

Isolation Characteristics

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

ISO

R

ISO

C

ISO

*All Typical values at T

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 3

Isolation Voltage f = 60Hz, t = 1 sec. All 7500 V

Isolation Resistance V

= 500 VDC All 10

I-O

11

AC

PEAK

Isolation Capacitance f = 1MHz All 0.2 pF

= 25°C

A

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

Installation Classifications per DIN VDE 0110/1.89

Ta ble 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175
V

PR

Input to Output Test Voltage, Method b,

V

x 1.875 = V

IORM

, 100% Production Test

PR

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a,

V

IORM

x 1.5 = V

, Type and Sample Test

PR

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

V

IORM

IOTM

Max. Working Insulation Voltage 850 V

Highest Allowable Over Voltage 6000 V

peak

peak

External Creepage 7 mm
External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 4

Typical Performance Curves

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

10

1

0.1

0.01

– NORMALIZED OUTPUT CURRENT

C

I

0.001

0.1 1 10

IF – LED INPUT CURRENT(mA)

Fig. 3 Output Current vs. Collector - Emitter Voltage

100

Normalized to:

= 5V

V

Fig. 1 Output Current vs. Input Current

CE

= 1mA

I

F

= 25˚C

T

A

10

1

0.1

– NORMALIZED OUTPUT CURRENT

C

I

0.01
110

VCE – COLLECTOR – EMITTER VOLTAGE (V)

IF = 50mA

= 10mA

I

F

I

= 2mA

F

I

= 1mA

F

I

= 0.5mA

F

Normalized to:

= 5V

V

CE

= 1mA

I

F

Fig. 2 Normalized Output Current vs. Temperature

100

Normalized to:

= 5V

V

CE

= 1mA

I

F

= 25˚C

T

10

1

0.1

– NORMALIZED OUTPUT CURRENT

C

I

0.01

-60 -40 -20 0 20 40 60 80 100 120

IF = 50mA

I

= 5mA

F

= 1mA

I

F

I

= 0.5mA

F

A

TA – AMBIENT TEMPERATURE (˚C)

Fig. 4 Collector-Emitter Dark Current

1000

100

10

1

– DARK CURRENT (nA)

CEO

0.1

I

0.01
0102030405060708090100

vs. Ambient Temperature

= 80V

V

CE

VCE = 30V

V

= 10V

CE

TA – AMBIENT TEMPERATURE (˚C)

Fig. 5 Input Current vs. Total Switching Speed (Typical Values)

10

= 10Ω

R

L

1

Normalized to:

– FORWARD CURRENT (mA)

F

I

= 5V

V

CC

= 10mA

I

F

= 100Ω

R

L

0.1

0.1 1 10

ton + t

– TOTAL SWITCHING SPEED (NORMALIZED)

off

R

L

= 100Ω

R

= 1kΩ

L

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 5

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

Surface Mount

7.62 (Typ.)

15° (Typ.)

8.13–8.89

64

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 6

Ordering Information

Option

No option H11G1M Standard Through Hole Device

S H11G1SM Surface Mount Lead Bend

SR2 H11G1SR2M Surface Mount; Tape and Reel

T H11G1TM 0.4" Lead Spacing

V H11G1VM VDE 0884

TV H11G1TVM VDE 0884, 0.4" Lead Spacing

SV H11G1SVM VDE 0884, Surface Mount

SR2V H11G1SR2VM VDE 0884, Surface Mount, Tape and Reel

Marking Information

Order Entry Identifier

(Example) Description

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

H11G1

V X YY

43

Definitions

1Fairchild logo

2Device number

VDE mark (Note: Only appears on parts ordered with VDE

3

option – See order entry table)

4 One digit year code, e.g., ‘7’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

5

Q

1

2

6

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 7

Carrier Tape Specification

4.5 ± 0.20

0.30 ± 0.05

21.0 ± 0.1

0.1 MAX

User Direction of Feed

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

1.75 ± 0.10

24.0 ± 0.3

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

Reflow Profile

°C

300

280

260

240

220

200

180

160

140

120

100

80

60

40

20

0

0 60 180120 270

1.822°C/Sec Ramp up rate

33 Sec

260°C

Time above

183°C = 90 Sec

Time (s)

>245°C = 42 Sec

360

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 8

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not
intended to be an exhaustive list of all such trademarks.

Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™

CROSSVOLT™

CTL™
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EZSWITCH™*

®

™*

®

®

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®

FACT

®

FAST

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®

FRFET
Global Power Resource
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MICROCOUPLER™
MicroFET™
MicroPak™
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Motion-SPM™
OPTOLOGIC
OPTOPLANAR

®

FastvCore™
FETBench™
FlashWriter
FPS™

®

*

PDP SPM™
Power-SPM™

PowerTrench

SM

PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™

®

®

SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™

®

®

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TinyBoost™
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®

TinyLogic

®

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™

TinyPower™
TinyPWM™
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TriFault Detect™

®

TRUECURRENT™*
µSerDes™

®

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™

®

*

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERSTHESE PRODUCTS.

H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
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safety or effectiveness.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.

Rev. I40

©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11G1M, H11G2M, H11G3M Rev. 1.0.4 9