Datasheet H11AG1M, H11AG2M, H11AG3M Datasheet (Fairchild)

H11AG1M — Phototransistor Optocoupler

September 2009

H11AG1M Phototransistor Optocoupler

Features

■

High efficiency low degradation liquid epitaxial IRED Logic level compatible, input and output currents,

■

with CMOS and LS/TTL

■

High DC current transfer ratio at low input currents (as low as 200µA)

■

Underwriters Laboratory (UL) recognized File #E90700, Volume 2

IEC 60747-5-2 approved (ordering option V)

■

Applications

■

CMOS driven solid state reliability

■

Telephone ring detector Digital logic isolation

■

Schematic

ANODE

1

6

BASE

Description

The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.

6

1

N/C

2

3

5 COL

4 EMITTER

6

1

CATHODE

6

1

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

V

R

I

(pk) Forward Current – Peak (1µs pulse, 300pps) 3.0 A

F

P

D

DETECTOR

P

D

I

C

Storage Temperature -55 to +150 °C Operating Temperature -40 to +100 °C Lead Solder Temperature (Wave Solder) 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C

260 mW

3.5 mW/°C

Continuous Forward Current 50 mA Reverse Voltage 6 V

LED Power Dissipation 25°C Ambient Derate Linearly From 25°C

Detector Power Dissipation @ 25°C Derate Linearly from 25°C

75 mW

1.0 mW/°C

150 mW

2.0 mW/°C

Continuous Collector Current 50 mA

H11AG1M — Phototransistor Optocoupler

(T

Electrical Characteristics

= 25°C unless otherwise speciﬁed.)

A

Individual Component Characteristics

Symbol Parameters Test Conditions Min. Typ.* Max. Units

EMITTER

V

I

C

DETECTOR

BV

I

CEO

C

*Typical values at T

Input Forward Voltage I

F

Reverse Leakage Current V

R

Capacitance V = 0, f = 1.0MHz 100 pF

J

Breakdown Voltage, Collector to Emitter I

CEO

Collector to Base I

CBO

Emitter to Collector I

ECO

Leakage Current, Collector to Emitter V

Capacitance V

CE

= 25°C.

A

= 1mA 1.25 1.5 V

F

= 5V, T

R

= 1.0mA, I

C

= 100µA, I

C

= 100µA, I

C

CE

= 25°C 10 µA

A

= 0 30 V

F

= 0 70 V

F

= 0 7 V

F

= 10V, I

= 0 5 10 µA

F

= 10V, f = 1MHz 10 pF

H11AG1M — Phototransistor Optocoupler

Isolation Characteristics

Symbol Parameter Test Conditions Min. Typ.* Max. Units

V

ISO

R

ISO

Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 Isolation Resistance V

Transfer Characteristics

= 500VDC, T

I-O

(T

= 25°C Unless otherwise speciﬁed.)

A

= 25°C 10

A

11

V

AC

Symbol Characteristics Test Conditions Min. Typ.* Max. Units

DC CHARACTERISTICS

CTR Current Transfer Ratio I

V

CE(SAT)

Saturation Voltage I

AC CHARACTERISTICS

Non-Saturated Switching Times

t

on

t

off

*Typical values at T

Tu r n-On Time R Tu r n-Off Time R

= 25°C

A

= 1mA, V

F

I

= 1mA, V

F

I

= 0.2mA, V

F

= 2.0mA, I

F

= 100 Ω , I

L

= 100 Ω , I

L

= 5V 300 %

CE

= 0.6V 100

CE

= 1.5V 100

CE

= 0.5mA .40 V

C

= 1mA, V

F

= 1mA, V

F

= 5V 5 µs

CC

= 5V 5 µs

CC

PEAK

Ω

Safety and Insulation Ratings

As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

H11AG1M — Phototransistor Optocoupler

Installation Classiﬁcations per DIN VDE 0110/1.89

Ta ble 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classiﬁcation 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b,

V

x 1.875 = V

IORM

, 100% Production Test

PR

1594 V

peak

with tm = 1 sec, Partial Discharge < 5pC

Input to Output Test Voltage, Method a, V

IORM

x 1.5 = V

, Type and Sample Test

PR

1275 V

peak

with tm = 60 sec, Partial Discharge < 5pC

V

IORM

IOTM

Max. Working Insulation Voltage 850 V Highest Allowable Over Voltage 6000 V

peak

External Creepage 7 mm External Clearance 7 mm

Insulation Thickness 0.5 mm

RIO Insulation Resistance at Ts, V

= 500V 10

IO

9

Ω

Typical Performance Curves

H11AG1M — Phototransistor Optocoupler

Figure 1. LED Forward Voltage vs. Forward Current

2.0

1.8

1.6

- FORWARD VOLTAGE (V)

F

V

1.4

1.2

= -55oC

T

A

= 25

T

A

= 100oC

T

A

o

C

1.0

0.8

0.1 1 10 100

IF - LED FORWARD CURRENT (mA)

Figure 3. Normalized CTR vs. Temperature

1.6

NORMALIZED TO:

I

= 5mA

F

= 5V

V

CE

o

T

= 25

C

A

= 1mA

I

F

I

= 0.5mA

F

IF = 0.2mA

-60 -40 -20 0 20 40 60 80 100

T

- AMBIENT TEMPERATURE -

A

o

C

CE

NORMALIZED CTR

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I

= 10mA

F

IF = 2mA

= 5mA

I

F

Figure 2. Normalized Current Transfer Ratio vs. Forward Current

1.2

1.0

CE

0.8

CTR

0.6

0.4

NORMALIZED

NORMALIZED TO:

= 5mA

I

0.2

F

V

= 5V

CE

o

= 25

T

C

A

0.1 1 10 100

IF - FORWARD CURRENT - mA

Figure 4. Normalized Collector vs. Collector - Emitter Voltage

10

ENT

1

0.1

0.01

- COLLECTOR - EMITTER CURR

CE

0.001

0.0001

NORMALIZED I

0.1 1 10

V

- COLLECTOR - EMITTER VOLTAGE - V

CE

= 10mA

I

F

I

= 5mA

F

= 2mA

I

F

= 1mA

I

F

= 0.5mA

I

F

I

= 0.2mA

F

NORMALIZED TO: I

= 5mA

F

V

= 5V

CE

T

= 25oC

A

Figure 5. Normalized Collector Base

Photocurrent Ratio vs. Forward Current

30

25

20

Figure 6. Normalized Collector - Base Current vs. Temperature

10

= 10mA

I

F

1

IF = 5mA

IF = 2mA

IF = 1mA

15

10

NORMALIZED TO: I

= 5mA

5

0

NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT

0102030405060708090100

F

V

CB

T = 25

A

= 5V

o

C

IF - FORWARD CURRENT - mA

0.1 = 0.5mA

I

F

IF = 0.2mA

0.01 NORMALIZED TO:

I

= 5mA

F

V

= 5V

CB

= 25oC

T

NORMALIZED COLLECTOR - BASE CURRENT

A

0.001

-60 -40 -20 0 20 40 60 80 100

TA - AMBIENT TEMPERATURE - oC

H11AG1M — Phototransistor Optocoupler

Typical Performance Curves

Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature

10000

1000

100

10

- DARK CURRENT (nA)

CEO

I

0.1

R

AC

INPUT

VOLTAGE

1

1N4148

C

1

H11AG1M

4.7MΩ

(Continued)

IF = 0mA

= 10V

V

CE

1

0102030405060708090100

TA - AMBIENT TEMPERATURE (oC)

3V ≤ VCC ≤ 10V

47KΩ

C

0.1

4093 or 74HC14

4.7KΩ

2

Input R1 C1 Z

40-90 VRMS

20Hz

95-135 VRMS

60Hz

200-280 VRMS

50/60Hz

DC component of input voltage is ignored due to C1

75K

1/10W

180K

1/10W

390K 1/4W

0.1µF 100V

12 ηF 200 V

6.80 ηF

400 V

109K

285K

550K

Figure 8. Telephone Ring Detector/A.C. Line CMOS Input Isolator

The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing requirements.

Package Dimensions

Through Hole 0.4" Lead Spacing

8.13–8.89

64

8.13–8.89

64

H11AG1M — Phototransistor Optocoupler

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

Surface Mount

7.62 (Typ.)

15° (Typ.)

8.13–8.89

64

0.20–0.30

6.10–6.60

5.08 (Max.)

3.28–3.53

0.38 (Min.)

(0.86)

1.02–1.78

Pin 1

13

0.41–0.51

(1.78)

0.25–0.36

0.76–1.14

2.54–3.81

2.54 (Bsc)

(1.52)

0.20–0.30

10.16–10.80

(2.54)

(0.76)

8.43–9.90

6.10–6.60

Pin 1

(7.49)

(10.54)

13

Rcommended Pad Layout

0.25–0.36

3.28–3.53

5.08

(Max.)

0.38 (Min.)

(0.86)

1.02–1.78

0.41–0.51

0.76–1.14

2.54 (Bsc)

0.16–0.88

(8.13)

0.20–0.30

Note:

All dimensions in mm.

Ordering Information

Sufﬁx Example Option

No Sufﬁx H11AG1M Standard Through Hole Device (50 units per tube)

S H11AG1SM Surface Mount Lead Bend

SR2 H11AG1SR2M Surface Mount; Tape and Reel (1,000 units per reel)

T H11AG1TM 0.4" Lead Spacing

V H11AG1VM VDE 0884 TV H11AG1TVM VDE 0884, 0.4" Lead Spacing SV H11AG1SVM VDE 0884, Surface Mount

SR2V H11AG1SR2VM VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)

Marking Information

H11AG1M — Phototransistor Optocoupler

1

H11AG1

V X YY Q

43

5

2

6

Deﬁnitions

1Fairchild logo 2Device number 3 VDE mark (Note: Only appears on parts ordered with VDE

option – See order entry table) 4 One digit year code, e.g., ‘7’ 5Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code

Tape Dimensions

4.5 ± 0.20

21.0 ± 0.1

0.1 MAX

0.30 ± 0.05

User Direction of Feed

4.0 ± 0.1

10.1 ± 0.20

12.0 ± 0.1

2.0 ± 0.05

1.5 MIN

Ø

11.5 ± 1.0

9.1 ± 0.20

1.5 ± 0.1/-0

Ø

1.75 ± 0.10

24.0 ± 0.3

H11AG1M — Phototransistor Optocoupler

Note:

All dimensions are in inches (millimeters)

Reﬂow Soldering Proﬁle

300 280 260 240 220 200 180 160

°C

140 120 100

80 60 40 20

0

0 60 180120 270

1.822°C/Sec Ramp up rate

33 Sec

260°C

>245°C = 42 Sec

Time above

183°C = 90 Sec

360

Time (s)

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H11AG1M — Phototransistor Optocoupler

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As used herein:

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Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary

First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40

Datasheet H11AG1M, H11AG2M, H11AG3M Datasheet (Fairchild)

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