Fairchild H11AA1M, H11AA2M, H11AA3M, H11AA4M service manual

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

September 2009

H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers

Features

■

Bi-polar emitter input
Built-in reverse polarity input protection

■

■

Underwriters Laboratory (UL) recognized File
#E90700, Volume 2

■

VDE approved File #102497 (ordering option ‘V’)

Description

The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.

Applications

■

AC line monitor
Unknown polarity DC sensor

■

■

Telephone line interface

Schematic Package Outlines

1

2

6

BASE

5 COLL

3

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3

4 EMITTER

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Absolute Maximum Ratings

(T

=25°C Unless otherwise specified)

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.

Symbol Parameter Device Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

D

EMITTER

I

F

(pk) Forward Current – Peak (1µs pulse, 300 pps) All ±1.0 A

I

F

P

D

DETECTOR

I

C

P

D

Storage Temperature All -40 to +150 °C

Operating Temperature All -40 to +100 °C

Lead Solder Temperature All 260 for 10 sec °C

Total Device Power Dissipation

Derate Linearly From 25°C

All 250 mW

2.94 mW/°C

Continuous Forward Current All 60 mA

LED Power Dissipation

Derate Linearly From 25°C

All 120 mW

1.41 mW/°C

Continuous Collector Current All 50 mA

Detector Power Dissipation

Derate linearity from 25°C

All 150 mW

1.76 mW/°C

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 2

H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C Unless otherwise specified.)

A

Individual Component Characteristics

Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit

EMITTER

V

C

DETECTOR

BV

BV

BV

BV

I

CEO

C

C

C

*Typical values at T

Input Forward Voltage I

F

Capacitance V

J

Breakdown Voltage

CEO

Collector to Emitter

Collector to Base I

CBO

Emitter to Base I

EBO

Emitter to Collector I

ECO

Leakage Current
Collector to Emitter

Capacitance Collector

CE

to Emitter

Collector to Base V

CB

Emitter to Base V

EB

= 25°C

A

= ±10mA All 1.17 1.5 V

F

= 0 V, f = 1.0MHz All 80 pF

F

I

= 1.0mA, I

C

= 100µA, I

C

= 100µA, I

E

= 100µA, I

E

V

= 10 V, I

CE

= 0 All 30 100 V

F

= 0 All 70 120 V

F

= 0 All 5 10 V

F

= 0 All 7 10 V

F

= 0 H11AA1M

F

150nA
H11AA3M
H11AA4M

H11AA2M 1 200

V

= 0, f = 1MHz All 10 pF

CE

= 0, f = 1MHz All 80 pF

CB

= 0, f = 1MHz All 15 pF

EB

Transfer Characteristics

Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units

CTR

V

CE(SAT)

Current Transfer Ratio,

CE

Collector to Emitter

Current Transfer Ratio,
Symmetry

Saturation Voltage,
Collector to Emitter

I

= ±10mA, V

F

= ±10mA, V

I

F

(Figure 11)

I

= ±10mA, I

F

= 10V H11AA4M 100 %

CE

H11AA3M 50

H11AA1M 20

H11AA2M 10

= 10V

CE

= 0.5mA All .40 V

CE

All .33 3.0

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ.* Max. Units

C

I-O

V

ISO

R

ISO

*Typical values at T

Package Capacitance

V

= 0, f = 1MHz 0.7 pF

I-O

Input/Output

Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk)

Isolation Resistance V

= 25°C

A

= 500 VDC 10

I-O

11

Ω

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 3