PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
2
1
3N C
5
6
4
查询4N25.300供应商
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
WHITE PACKAGE (-M SUFFIX)
BLACK PACKAGE (NO -M SUFFIX)
DESCRIPTION
SCHEMATIC
6
6
6
6
6
1
1
1
6
1
1
1
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• Also available in white package by specifying -M suffix, eg. 4N25-M
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
- Add option V for white package (e.g., 4N25V-M)
- Add option 300 for black package (e.g., 4N25.300)
APPLICATIONS
•Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2005 Fairchild Semiconductor Corporation
Page 1 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
(T
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature
Operating Temperature
Wave solder temperature (see page 14 for reflow solder profiles)
Total Device Power Dissipation @ T
Derate above 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ T
= 25°C
A
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T
Derate above 25°C
A
= 25°C
A
= 25°C
= 25°C unless otherwise specified)
A
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
(pk)
F
P
D
V
CEO
V
CBO
V
ECO
P
D
-55 to +150 °C
-55 to +100 °C
260 for 10 sec °C
250
3.3 (non-M), 2.94 (-M)
100 (non-M), 60 (-M) mA
6V
3A
150 (non-M), 120 (-M) mW
2.0 (non-M), 1.41 (-M) mW/°C
30 V
70 V
7V
150 mW
2.0 (non-M), 1.76 (-M) mW/°C
mW
© 2005 Fairchild Semiconductor Corporation
Page 2 of 15
6/15/05
Ω
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
(T
ELECTRICAL CHARACTERISTICS
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Min Typ* Max Unit
EMITTER
Input Forward Voltage (I
Reverse Leakage Current (V
DETECTOR
Collector-Emitter Breakdown Voltage (I
Collector-Base Breakdown Voltage (I
Emitter-Collector Breakdown Voltage (I
Collector-Emitter Dark Current (V
Collector-Base Dark Current (V
Capacitance (V
CE
= 25°C unless otherwise specified)
A
= 10 mA) V
F
= 6.0 V) I
R
= 1.0 mA, I
C
= 100 µA, I
C
= 100 µA, I
E
= 10 V, I
CE
= 0) BV
F
= 0) BV
F
= 0) BV
F
= 0) I
F
= 10 V) I
CB
= 0 V, f = 1 MHz) C
F
R
CEO
CBO
ECO
CEO
CBO
CE
1.18 1.50 V
0.001 10 µA
30 100 V
70 120 V
71 0 V
1 50 nA
20 nA
8p F
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)
Isolation Resistance (V
Isolation Capacitance
(V
(‘-M’ White Package) 0.2 2 pF
Note
* Typical values at T
= 25°C
A
= 500 VDC) R
I-O
= &, f = 1 MHz)
I-O
V
ISO
ISO
C
ISO
5300 Vac(rms)
11
10
0.5 pF
© 2005 Fairchild Semiconductor Corporation
Page 3 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
(T
TRANSFER CHARACTERISTICS
DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
(I
= 10 mA, V
F
Current Transfer Ratio,
Collector to Emitter
(I
= 10 mA, V
Collector-Emitter
Saturation Voltage
AC Characteristic
Non-Saturated
Tu r n-on Time
Non Saturated
Tu r n-on Time
F
(I
= 10 mA, V
F
(I
(I
(I
= 10 mA, V
F
(I
= 2 mA, V
C
CE
CE
= 2 mA, I
C
= 0.5 mA, I
C
CC
(Fig.20)
CC
(Fig.20)
= 10 V, T
= 25°C Unless otherwise specified.)
A
= 10 V)
CE
CTR
= 10 V, T
F
= 10 V, R
= 10 V, R
= -55°C)
A
= +100°C)
A
= 50 mA)
= 10 mA)
F
L
= 100 Ω )
L
= 100 Ω )
V
CE (SAT)
T
ON
T
ON
4N35
4N36
100
4N37
H11A1 50
H11A5 30
4N25
4N26
H11A2
20
H11A3
4N27
4N28
10
H11A4
4N35
4N36
40
4N37
4N35
4N36
40
4N37
4N25
4N26
4N27
4N28
4N35
4N36
4N37
H11A1
H11A2
H11A3
H11A4
H11A5
4N25
4N26
4N27
4N28
H11A1
H11A2
H11A3
H11A4
H11A5
4N35
4N36
4N37
%
0.5
0.3
V
0.4
2µ s
21 0µ s
© 2005 Fairchild Semiconductor Corporation
Page 4 of 15
6/15/05
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5
TRANSFER CHARACTERISTICS
AC Characteristic Test Conditions Symbol Device Min Typ* Max Unit
= 10 mA, V
(I
F
Tu r n-off Time
(I
= 2 mA, V
C
* Typical values at T
= 25°C
A
= 10 V, R
CC
(Fig.20)
= 10 V, R
CC
(Fig.20)
(T
= 25°C Unless otherwise specified.) (Continued)
A
4N25
4N26
4N27
= 100 Ω )
L
= 100 Ω )
L
T
OFF
4N28
H11A1
H11A2
H11A3
H11A4
H11A5
4N35
4N36
4N37
2
21 0
µs
© 2005 Fairchild Semiconductor Corporation
Page 5 of 15
6/15/05