Fairchild FSAM50SM60A, Motion SPM 2 Series User Manual

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A Motion SPM® 2 Series

January 2014

FSAM50SM60A
Motion SPM

®

2 Series

Features

• UL Certified No. E209204 (UL1557)

• 600 V - 50 A 3-Phase IGBT Inverter with Integral
Gate Drivers and Protection

• Low-Loss, Short-Circuit Rated IGBTs

• Very Low Thermal Resistance Using Al

2O3

DBC

Substrate

• Separate Open-Emitter Pins from Low Side IGBTs
for Three-Phase Current Sensing

• Single-Grounded Power Supply

• Optimized for 5 kHz Switching Frequency

• Built-in NTC Thermistor for Temperature
Monitoring

• Inverter Power Rating of 4.0 kW / 100~253 VAC

• Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs

• Isolation Rating: 2500 V

rms

/ min.

Applications

• Motion Control - Home Appliance / Industrial Motor

Resource

• AN-9043 - Motion SPM® 2 Series User's Guide

General Description

FSAM50SM60A is a Motion SPM® 2 module
providing a fully-featured, high-performance inverter
stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection
features including under-voltage lockouts, over­current shutdown, thermal monitoring, and fault
reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative
IGBT terminals are available for each phase to
support the widest variety of control algorithms.

Package Marking and Ordering Information

Device Device Marking Package Packing Type Quantity

FSAM50SM60A FSAM50SM60A S32CA-032 Rail 8

Figure 1. Package Overview

©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A Motion SPM® 2 Series

Integrated Power Functions

• 600V - 50 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting

control circuit Under-Voltage Lock-Out (UVLO) Protection
Note) Available bootstrap circuit example is given in Figures 13 and 14.

• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)

control supply circuit Under-Voltage Lock-Out (UVLO) Protection

• Temperature Monitoring: system temperature monitoring using built-in thermistor

Note) Available temperature monitoring circuit is given in Figure 14.

• Fault signaling: corresponding to a SC fault (low-side IGBTs) and UV fault (low-side control supply)

• Input interface: active-LOW Interface, works with 3.3 / 5 V logic, Schmitt-trigg er input

Pin Configuration

Figure 2. Top View

Case Temperature(TC)
Detecting Point

(26)N

U

(22)V

B(W)

(1)V

CC(L)

(2)COM

(L)

(3)IN

(UL)

(4)IN

(VL)

(5)IN

(WL)

(7)V

FO

(27)N

V

(28)N

W

(32)P

(20)IN

(WH)

(23)V

S(W)

(29)U

(30)V

(31)W

(8)C

FOD

(9)C

SC

(25)R

TH

(24)V

TH

(21)V

CC(WH)

(18)V

B(V)

(19)V

S(V)

(15)IN

V(H)

(17)V

CC(VH)

(16)COM

(H)

(13)V

B(U)

(14)V

S(U)

(11)IN

(UH)

(12)V

CC(UH)

(10)R

SC

(6)COM

(L)

DBC Substrate

Case Temperature(T

C

)

Detecting Point

(26)N

U

(22)V

B(W)

(1)V

CC(L)

(2)COM

(L)

(3)IN

(UL)

(4)IN

(VL)

(5)IN

(WL)

(7)V

FO

(27)N

V

(28)N

W

(32)P

(20)IN

(WH)

(23)V

S(W)

(29)U

(30)V

(31)W

(8)C

FOD

(9)C

SC

(25)R

TH

(24)V

TH

(21)V

CC(WH)

(18)V

B(V)

(19)V

S(V)

(15)IN

V(H)

(17)V

CC(VH)

(16)COM

(H)

(13)V

B(U)

(14)V

S(U)

(11)IN

(UH)

(12)V

CC(UH)

(10)R

SC

(6)COM

(L)

DBC Substrate

©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A Motion SPM® 2 Series

Pin Descriptions

Pin Number Pin Name Pin Description

1V

CC(L)

Low-Side Common Bias Voltage for IC and IGBTs Driving

2COM

(L)

Low-Side Common Supply Ground

3IN

(UL)

Signal Input Terminal for Low-Side U-Phase

4IN

(VL)

Signal Input Terminal for Low-Side V-Phase

5IN

(WL)

Signal Input Terminal for Low-Side W-Phase

6COM

(L)

Low-Side Common Supply Ground

7V

FO

Fault Output

8C

FOD

Capacitor for Fault Output Duration Selection

9C

SC

Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input

10 R

SC

Resistor for Short-Circuit Current Detection

11 IN

(UH)

Signal Input for High-Side U-Phase

12 V

CC(UH)

High-Side Bias Voltage for U-Phase IC

13 V

B(U)

High-Side Bias Voltage for U-Phase IGBT Driving

14 V

S(U)

High-SideBias Voltage Ground for U-Phase IGBT Driving

15 IN

(VH)

Signal Input for High-Side V-Phase

16 COM

(H)

High-Side Common Supply Ground

17 V

CC(VH)

High-Side Bias Voltage for V-Phase IC

18 V

B(V)

High-Side Bias Voltage for V-Phase IGBT Driving

19 V

S(V)

High-Side Bias Voltage Ground for V-Phase IGBT Driving

20 IN

(WH)

Signal Input for High-side W-Phase

21 V

CC(WH)

High-Side Bias Voltage for W-Phase IC

22 V

B(W)

High-Side Bias Voltage for W-Phase IGBT Driving

23 V

S(W)

High-Side Bias Voltage Ground for W-Phase IGBT Driving

24 V

TH

Thermistor Bias Voltage

25 R

TH

Series Resistor for the Use of Thermistor (Temperature Detection)

26 N

U

Negative DC-Link Input Terminal for U-Phase

27 N

V

Negative DC-Link Input Terminal for V-Phase

28 N

W

Negative DC-Link Input Terminal for W-Phase
29 U Output for U-Phase
30 V Output for V-Phase
31 W Output for W-Phase
32 P Positive DC-Link Input

©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A Motion SPM® 2 Series

Internal Equivalent Circuit and Input/Output Pins

Figure 3. Internal Block Diagram

1st Notes:

1. Inverter low-side is composed of three sense-IG BTs includ ing free whe eling d iodes for each IGBT a nd one co ntrol IC w hich has ga te drivi ng, cur rent -sensing and
protection functions.

2. Inverter power side is composed of four inverter DC-link input pins and three inverter output pins.

3. Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.

COM(L)
VCC

IN(UL)

IN(VL)

IN(WL)

VFO

C(FOD)

C(SC)

OUT(UL)

OUT(VL)

OUT(WL)

NU (26)

N

V

(27)

N

W

(28)

U (29)

V (30)

W (31)

P (32)

(23) V

S(W)

(22) V

B(W)

(19) V

S(V)

(18) V

B(V)

(9) C

SC

(8) C

FOD

(7) V

FO

(5) IN

(WL)

(4) IN

(VL)

(3) IN

(UL)

(2) COM

(L)

(1) V

CC(L)

(10) R

SC

RTH (25)

V

TH

(24)

(6) COM

(L)

VCC

VB

OUT

COM

VS

IN

VB

VS

OUT

IN

COM

VCC

VCC

VB

OUT

COM

VS

IN

(21) V

CC(WH)

(20) IN

(WH)

(17) V

CC(VH)

(15) IN

(VH)

(16) COM

(H)

(14) V

S(U)

(13) V

B(U)

(12) V

CC(UH)

(11) IN

(UH)

THERMISTOR

©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A Motion SPM® 2 Series

Absolute Maximum Ratings (T

J

= 25°C, unless otherwise specified.)

Inverter Part

2nd Notes:

1. It would be recommended that the average junction temperature should be limited to TJ  125C (at TC  100C) in order to guarantee safe operation.

Control Part

Total System

Thermal Resistance

2nd Notes:

2. For the measurement point of case temperature(TC), please refer to Figure 2.

3. The thickness of thermal grease should not be more than 100 m.

Item Symbol Condition Rating Unit

Supply Voltage V

DC

Applied to DC-Link 450 V

Supply Voltage (Surge) V

PN(Surge)

Applied between P and N 500 V

Collector - Emitter Voltage V

CES

600 V

Each IGBT Collector Current ± I

C

TC = 25°C 50 A

Each IGBT Collector Current ± I

C

TC = 100°C 25 A

Each IGBT Collector Current (Peak) ± I

CP

TC = 25°C , Under 1ms Pulse Width 100 A

Collector Dissipation P

C

TC = 25°C per Chip 100 W

Operating Junction Temperature T

J

(2nd Note 1) -20 ~ 125 °C

Item Symbol Condition Rating Unit

Control Supply Voltage V

CC

Applied between V

CC(UH)

, V

CC(VH)

, V

CC(WH)

-

COM

(H)

, V

CC(L)

- COM

(L)

20 V

High-Side Control Bias Voltage V

BS

Applied between V

B(U)

- V

S(U)

, V

B(V)

- V

S(V)

, V

B(W)

-

V

S(W)

20 V

Input Signal Voltage V

IN

Applied between IN

(UH)

, IN

(VH)

, IN

(WH)

- COM

(H)

IN

(UL)

, IN

(VL)

, IN

(WL)

- COM

(L)

-0.3 ~ VCC+0.3 V

Fault Output Supply Voltage V

FO

Applied between VFO - COM

(L)

-0.3 ~ VCC+0.3 V

Fault Output Current I

FO

Sink Current at VFO Pin 5 mA

Current-Sensing Input Voltage V

SC

Applied between CSC - COM

(L)

-0.3 ~ VCC+0.3 V

Item Symbol Condition Rating Unit

Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)

V

PN(PROT)

Applied to DC-Link,
V

CC

= VBS = 13.5 ~ 16.5 V

T

J

= 125°C, Non-Repetitive, < 5 s

400 V

Module Case Operation Temperature T

C

See Figure 2 -20 ~ 100 °C

Storage Temperature T

STG

-20 ~ 125 °C

Isolation Voltage V

ISO

60Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate

2500 V

rms

Item Symbol Condition Min. Typ. Max. Unit

Junction to Case Thermal
Resistance

R

th(j-c)Q

Inverter IGBT Part (per 1/6 module) - - 1.00 °C/W

R

th(j-c)F

Inverter FWDi Part (per 1/6 module) - - 1.50 °C/W

Contact Thermal
Resistance

R

th(c-f)

DBC Substrate (per 1 Module)
Thermal Grease Applied (2nd Note 3)

- - 0.06 °C/W