Fairchild FQD7N10L, FQU7N10L service manual

FQD7N10L / FQU7N10L

FQD7N10L / FQU7N10L

100V LOGIC N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as high
efficiency switching DC/DC converters, and DC motor
control.

D

S

D-PAK

FQD Series

G

D

S

G

October 2008

QFET

Features

• 5.8A, 100V, R

• Low gate charge ( typical 4.6 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirments allowing
direct operation from logic drives

• RoHS Compliant

I-PAK

FQU Series

= 0.35Ω @VGS = 10 V

DS(on)

G

D

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Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQD7N10L / FQU7N10L Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

5.8 A

3.67 A

23.2 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

50 mJ

5.8 A

2.5 mJ

6.0 V/ns

2.5 W
25 W

- Derate above 25°C 0.2 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300 °C

Thermal Charac teristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case -- 5.0 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

©2008 Fairchild Semiconductor International Rev. A3, October 2008

FQD7N10L / FQU7N10L

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter T e st Conditions Min Typ Max Units

Off Characteristics

BV
∆BV
/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 100 V, VGS = 0 V

DS

= 80 V, TC = 125°C

V

DS

V

= 20 V, VDS = 0 V

GS

V

= -20 V, VDS = 0 V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

V

= 10 V, ID = 2.9 A

GS

= 5 V, ID = 2.9 A

V

GS

= 30 V, ID = 2.9 A

V

DS

(Note 4)

1.0 -- 2.0 V

0.275

--

0.300

0.35

0.38

-- 4.6 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 55 72 pF
Reverse Transfer Capacitance -- 12 15 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 220 290 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 100 210 ns
Turn-Off Delay Time -- 17 45 ns
Turn-Off Fall Time -- 50 110 ns
Total Gate Charge
Gate-Source Charge -- 1.0 -- nC
Gate-Drain Charge -- 2.6 -- nC

V

= 50 V, ID = 7.3 A,

DD

R

= 25 Ω

G

= 80 V, ID = 7.3 A,

V

DS

V

GS

= 5 V

(Note 4, 5)

(Note 4, 5)

-- 9 30 ns

-- 4.6 6.0 nC

Ω

Drain-So urce Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.23mH, IAS = 5.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2008 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 23.2 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 140 -- nC

Starting TJ = 25°C

DSS,

= 0 V, IS = 5.8 A

GS

= 0 V, IS = 7.3 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.5 V

-- 70 -- ns

(Note 4)

Rev. A3, October 2008

Typical Characteristics

FQD7N10L / FQU7N10L

V

GS

Top : 10.0 V

8.0 V

1

10

6.0 V

5.0 V

4.5 V

4.0 V

3.5 V
Bottom : 3.0 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

※

1. 250μs Pulse Test

2. T

VDS, Drain-Source Voltage [V]

1.5

1.2

0.9

],

Ω

[

0.6

DS(ON)

R

0.3

VGS = 5V

VGS = 10V

Drain-Source On-Resistance

0.0
0 5 10 15 20

ID, Drain Current [A]

Notes :

※

= 25

C

10

Note : T

1

10

℃

150

℃

1

0

10

℃

25

, Dra in Cu rrent [A]

D

I

-1

10

0246810

℃

-55

※

Notes :

1. V

= 30V

DS

2. 250μs Pulse Test

VGS , Gate - Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics

1

10

℃

= 25

J

0

10

℃

150

℃

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

25

※

Notes :

1. V

= 0V

GS

2. 250μs Pulse Test

VSD , So u rce-Dra in Volta ge [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = 50V

VDS = 80V

※

Note : I

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

10

1

Notes :

1. V

= 0 V

GS

2. f = 1 MH z

C

iss

C

oss

C

rss

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

012345678

QG, Tota l Gate Charge [n C]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 7.3 A

D

Rev. A3, October 2008©2008 Fairchild Semiconductor International