Fairchild FQD5N60C, FQU5N60C service manual

FQD5N60C / FQU5N60C

FQD5N60C / FQU5N60C

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D

GS

D-PAK

FQD Series

GSD

Features

• 2.8A, 600V, R

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 6.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

I-PAK

FQU Series

= 2.5Ω @VGS = 10 V

DS(on)

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October 2008

QFET

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Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FQD5N60C / FQU5N60C Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 600 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

2.8 A

1.8 A

11.2 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TA = 25°C)*
Power Dissipation (T

= 25°C)

C

(Note 2)
(Note 1)
(Note 1)
(Note 3)

210 mJ

2.8 A

4.9 mJ

4.5 V/ns

2.5 W
49 W

- Derate above 25°C 0.39 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Case - 2.56 °C/W
Thermal Resistance, Junction-to-Ambient* - 50 °C/W
Thermal Resistance, Junction-to-Ambient - 110 °C/W

©2008 Fairchild Semiconductor Internationa Rev. A1, October 2008

FQD5N60C / FQU5N60C

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to 25°C

I

D

V

= 600 V, VGS = 0 V

DS

= 480 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

600 -- -- V

-- 0.6 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 1.4 A

V

GS

V

= 40 V, ID = 1.4 A

DS

(Note 4)

2.0 -- 4.0 V

-- 2.0 2.5 Ω

-- 4.7 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 55 72 pF
Reverse Transfer Capacitance -- 6.5 8.5 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 515 670 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 42 90 ns
Turn-Off Delay Time -- 38 85 ns
Turn-Off Fall Time -- 46 100 ns
Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 6.6 -- nC

V

= 300 V, ID = 4.5A,

DD

R

= 25 Ω

G

(Note 4, 5)

V

= 480 V, ID = 4.5A,

DS

V

GS

(Note 4, 5)

= 10 V

-- 10 30 ns

-- 15 19 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Maximum Continuous Drain-Source Diode Forward Current -- -- 2.8 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 11.2 A

V

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 2.2 -- µC

Starting TJ = 25°C

DSS,

= 0 V, IS = 2.8 A

GS

= 0 V, IS = 4.5 A,

V

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- 1.4 V

-- 300 -- ns

Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation

Typical Characteristics

FQD5N60C / FQU5N60C

V

GS

1

Top : 15.0 V

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

0

10

5.0 V
Bottom : 4.5 V

-1

10

, Drain Current [A]

D

I

-2

10

-1

10

0

10

%

Notes :

1. 250&s Pulse Test

$

= 25

2. T

C

1

10

VDS, Drain-Source Voltage [V]

6

5

4

],

'

[

3

DS(ON)

R

2

Drain-Source On-Resistance

1

0

0246810

VGS = 10V

VGS = 20V

%

Note : T

= 25

J

ID, Drain Current [A]

1

10

150oC

0

25oC

10

, Drain Current [A]

D

I

-1

10

246810

-55oC

%

Notes :

= 40V

1. V

DS

2. 250&s Pulse Test

VGS, Gate-Source Voltage [V]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

1

10

$

0

10

$

150

%

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

$

25

Notes :

1. V

= 0V

GS

2. 250&s Pulse Test

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

1000

800

600

400

Capacitance [pF]

200

0

-1

10

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

C

iss

C

oss

%

Notes ;

1. V

= 0 V

GS

1

10

2. f = 1 MHz

C

rss

0

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0481216

QG, Tota l Gate Charge [nC]

VDS = 120V
VDS = 300V

VDS = 480V

%

Note : I

= 4.5A

D

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Rev. A1, October 2008©2008 Fairchild Semiconductor Corporation