Fairchild FQD2N80, FQU2N80 service manual

FQD2N80 / FQU2N80

800V N-Channel MOSFET

January 2008

QFET

®

General Description

FQD2N80 / FQU2N80

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.

Features

• 1.8A, 800V, R

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 5.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS Compliant

DS(on)

= 6.3Ω @V

GS

D

!

!

G

S

D-PAK

FQD Series

G

Absolute Maximum Ratings

I-PAK

G

D

S

TC = 25°C unless otherwise noted

FQU Series

Symbol Parameter FQD2N80 / FQU2N80 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

Drain-Source Voltage 800 V

Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 100°C)

C

(Note 1)

1.8 A

1.14 A

7.2 A

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (TA = 25°C) *

Power Dissipation (T

= 25°C)

C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

180 mJ

1.8 A

5.0 mJ

4.0 V/ns

2.5 W

50 W

- Derate above 25°C 0.4 W/°C

, T

T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

= 10 V

D

!

!

"

"

"

"
"

"

!

!

S

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJC

R

θJA

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2009 Fairchild Semiconductor International Rev. A2, January 2009

Thermal Resistance, Junction-to-Case -- 2.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W

FQD2N80 / FQU2N80

Electrical Characteristics

T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

V

= 0 V, I

GS

= 250 µA, Referenced to 25°C

I

D

V

= 800 V, VGS = 0 V

DS

= 640 V, TC = 125°C

V

DS

V

= 30 V, VDS = 0 V

GS

V

= -30 V, VDS = 0 V

GS

= 250 µA

D

800 -- -- V

-- 0.9 -- V/°C

-- -- 10 µA

-- -- 100 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V

R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Forward Transconductance

V

= VGS, I

DS

V

GS

V

DS

D

= 10 V, ID = 0.9 A

= 50 V, ID = 0.9 A

= 250 µA

(Note 4)

3.0 -- 5.0 V

-- 4.9 6.3 Ω

-- 2.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance

Output Capacitance -- 45 60 pF

Reverse Transfer Capacitance -- 5.5 7.0 pF

V

= 25 V, VGS = 0 V,

DS

f = 1.0 MHz

-- 425 550 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

g

gs

gd

Turn-On Delay Time

Turn-On Rise Time -- 30 70 ns

Turn-Off Delay Time -- 25 60 ns

Turn-Off Fall Time -- 28 65 ns

Total Gate Charge

Gate-Source Charge -- 2.6 -- nC

Gate-Drain Charge -- 6.0 -- nC

V

= 400 V, ID = 2.4 A,

DD

R

= 25 Ω

G

V

= 640 V, ID = 2.4 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 12 35 ns

-- 12 15 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 105mH, IAS = 1.8A, VDD = 50V, R

3. I

SD

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2009 Fairchild Semiconductor International

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.8 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.2 A

Drain-Source Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge -- 2.0 -- µC

≤ 2.4A, di/dt ≤ 200A/µs, V

= 25 Ω, Starting T

G

≤ BV

DD

Starting TJ = 25°C

DSS,

= 25°C

J

V

= 0 V, IS = 1.8 A

GS

= 0 V, IS = 2.4 A,

V

GS

dI

/ dt = 100 A/µs

F

-- -- 1.4 V

-- 480 -- ns

(Note 4)

Rev. A2, January 2009

Typical Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

0

6.5 V

10

6.0 V
Bottom : 5.5 V

-1

FQD2N80 / FQU2N80

10

, Drai n Current [A]

D

I

-2

10

-1

10

0

10

※

Notes :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

VDS, Drain- Source Voltage [V]

0

10

, Drai n Current [A]

D

I

-1

10

246810

150oC

25oC

VGS, Gate-Source Voltage [V]

-55oC

※

Notes :

1. V

= 50V

DS

2. 250μs Pulse Test

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

℃

℃

25

※

Notes :

= 0V

1. V

GS

2. 250μs Pulse Test

VGS = 20V

VGS = 10V

※

Note : T

= 25

J

12

10

],

8

Ω

[

DS(ON)

6

R

4

Drain-Sour ce On-Resi stance

2

0123456

ID, Drain Cur rent [A]

0

10

150

, Reverse Drain Curr ent [ A]

DR

℃

I

-1

10

0.2 0.4 0.6 0.8 1. 0 1.2

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

VDS = 160V

VDS = 400V

VDS = 640V

※

Note : I

700

600

500

400

300

200

Capacitance [pF]

100

0

-1

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

C

iss

C

oss

C

rss

0

10

gd

10

※

1. V

2. f = 1 MHz

1

Notes :

= 0 V

GS

VDS, Drain- Source Voltage [V]

12

10

8

6

4

, Gate- Source Vol tage [ V]

2

GS

V

0

0 2 4 6 8 10 12 14

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

= 2.4A

D

Rev. A2, January 2009 ©2009 Fairchild Semiconductor International