Fairchild FQD20N06L, FQU20N06L service manual
FQD20N06L / FQU20N06L
60V LOGIC N-Channel MOSFET
FQD20N06L / FQU20N06L
Mar 2009
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
D
S
D-PAK
FQD Series
G
D
S
= 25°C unless otherwise noted
C
G
Absolute Maximum Ratings T
Features
• 17.2A, 60V, R
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
o
C maximum junction temperature rating
• 150
• Low level gate drive requirements allowing direct
operation form logic drivers
I-PAK
FQU Series
= 0.06Ω @ VGS = 10V
DS(on)
G
D
!
!
"
"
"
"
!
!
"
!
!
"
"
"
!
!
S
Symbol Parameter FQD20N06L / FQU20N06L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 60 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
17.2 A
10.9 A
68.8 A
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
170 mJ
17.2 A
3.8 mJ
7.0 V/ns
2.5 W
38 W
- Derate above 25°C 0.30 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation Rev. A1. Mar 2009
Thermal Resistance, Junction-to-Case -- 3.28 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
FQD20N06L / FQU20N06L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e s t Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
V
= 60 V, VGS = 0 V
DS
= 48 V, TC = 125°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
60 -- -- V
-- 0.06 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 8.6 A
GS
= 5 V, ID = 8.6 A
V
GS
= 25 V, ID = 8.6 A
V
DS
(Note 4)
1.0 -- 2.5 V
----0.046
0.057
0.06
0.075
-- 11 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 175 230 pF
Reverse Transfer Capacitance -- 35 45 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 480 630 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 165 340 ns
Turn-Off Delay Time -- 35 80 ns
Turn-Off Fall Time -- 70 150 ns
Total Gate Charge
Gate-Source Charge -- 2.5 -- nC
Gate-Drain Charge -- 5.5 -- nC
V
= 30 V, ID = 10.5 A,
DD
R
= 25 Ω
G
= 48 V, ID = 21 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 10 30 ns
-- 9.5 13 nC
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 670µH, IAS = 17.2A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 21A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 17.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 68.8 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 75 -- nC
Starting TJ = 25°C
DSS,
= 0 V, IS = 17.2 A
GS
= 0 V, IF = 21 A,
V
GS
dI
/ dt = 100 A/µs
F
-- -- 1.5 V
-- 54 -- ns
(Note 4)
Rev. A1. Mar 2009©2009 Fairchild Semiconductor Corporation
Typical Characteristics
FQD20N06L / FQU20N06L
V
GS
Top : 10 .0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Botto m : 3 .0 V
1
10
, Drain Current [A]
D
I
0
10
-1
10
!
Note s :
1. 250#s Pulse Test
2. T
= 25
C
0
10
"
VDS, Drain-Source Voltage [V]
100
],
$
[m
R
80
60
DS(ON)
40
VGS = 5V
VGS = 10V
Drain-Source O n-Resistance
20
0 102030405060
!
Note : T
ID, Drain Current [A]
1
10
0
10
"
150
, Drain Current [A]
D
I
"
25
-1
1
10
10
0246810
"
-55
!
Notes :
1. V
= 25V
DS
2. 250#s Pulse Test
VGS, Gate-Source Voltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
1
10
0
10
, Reverse Drain Current [A]
DR
"
= 25
J
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150
"
"
25
!
Notes :
1. V
= 0V
GS
2. 250#s Pulse Test
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
VDS = 30V
VDS = 48V
!
Note : I
= 21A
D
Capacitance [pF]
1500
1000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
500
0
-1
10
C
rss
0
10
10
!
Notes :
1. V
2. f = 1 M H z
1
= 0 V
GS
VDS, Drain-Source Voltage [V]
12
10
8
6
4
2
, Gate-Source Voltage [V]
GS
V
0
048121620
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation Rev. A1. Mar 2009
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