Fairchild FQD18N20V2, FQU18N20V2 service manual
FQD18N20V2 / FQU18N20V2
FQD18N20V2 / FQU18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
D
GS
D-PAK
FQD Series
GSD
Features
• 15A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
I-PAK
FQU Series
DS(on)
= 0.14Ω @V
!
!
G
January 2009
QFET
= 10 V
GS
D
!
!
"
"
"
"
!
!
"
"
"
"
!
!
S
®
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FQD18N20V2 / FQU18N20V2 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 100°C)
C
(Note 1)
15 A
9.75 A
60 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
= 25°C)
C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
340 mJ
15 A
8.3 mJ
6.5 V/ns
2.5 W
83 W
- Derate above 25°C 0.67 W/°C
, T
T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case -- 1.5 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
©2009 Fairchild Semiconductor Corporation
Rev. B2,January 2009
FQD18N20V2 / FQU18N20V2
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, I
GS
= 250 µA, Referenced to 25°C
I
D
V
= 200 V, VGS = 0 V
DS
= 160 V, TC = 125°C
V
DS
V
= 30 V, VDS = 0 V
GS
V
= -30 V, VDS = 0 V
GS
= 250 µA
D
200 -- -- V
-- 0.25 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, I
DS
V
GS
V
DS
D
= 10 V, ID = 7.5 A
= 40 V, ID = 7.5 A
= 250 µA
(Note 4)
3.0 -- 5.0 V
-- 0.12 0.14 Ω
-- 11 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
Output Capacitance -- 200 260 pF
Reverse Transfer Capacitance -- 25 33 pF
Output Capacitance
eff.
Effective Output Capacitance
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
= 160 V, VGS = 0 V,
V
DS
f = 1.0 MHz
VDS = 0V to 160 V, VGS = 0 V
-- 830 1080 pF
-- 70 -- pF
-- 135 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 133 275 ns
Turn-Off Delay Time -- 38 85 ns
Turn-Off Fall Time -- 62 135 ns
Total Gate Charge
Gate-Source Charge -- 5.6 -- nC
Gate-Drain Charge -- 10 -- nC
V
= 100 V, ID = 18 A,
DD
R
= 25 Ω
G
(Note 4, 5)
= 160 V, ID = 18 A,
V
DS
V
GS
(Note 4, 5)
= 10 V
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, IAS = 18A, VDD = 50V, R
3. I
SD
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 1.0 -- µC
≤ 18A, di/dt ≤ 200A/µs, V
DD
≤ BV
G
= 25 Ω, Starting T
Starting TJ = 25°C
DSS,
= 25°C
J
V
= 0 V, IS = 15 A
GS
= 0 V, IS = 18 A,
V
GS
dI
/ dt = 100 A/µs
F
(Note 4 )
-- 16 40 ns
-- 20 26 nC
-- -- 1.5 V
-- 158 -- ns
©2009 Fairchild Semiconductor Corporation
Rev. B2, January 2009
Typical Characteristics
FQD18N20V2 / FQU18N20V2
V
GS
Top : 15.0 V
10.0 V
8.0 V
1
10
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
!
Notes :
1. 250#s Pulse Test
2. T
= 25
C
1
10
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Char act er i st ics
0.5
0.4
],
0.3
$
[
DS(ON)
0.2
R
0.1
Drain-Source On-Resistance
0.0
0 102030405060
VGS = 10V
VGS = 20V
ID, Drain Current [A]
!
Note : T
1
10
0
10
, Drain Current [A]
D
I
"
-1
10
45678910
"
150
"
25
"
-55
!
Notes :
1. V
= 40V
DS
2. 250#s Pulse Test
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
10
J
= 25
0
10
, Re verse Drai n Current [ A]
DR
"
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
"
150
"
25
!
Notes :
= 0V
1. V
GS
2. 250#s Pulse Test
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
2500
2000
1500
1000
Capacitance [pF]
500
0
-1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
!
Notes :
1. V
= 0 V
GS
2. f = 1 MHz
C
iss
C
oss
C
rss
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
VDS = 40V
VDS = 100V
VDS = 160V
!
= 18A
Note : I
D
Rev. B2, January 2009
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