Fairchild FQD12N20L, FQU12N20L service manual
FQD12N20L / FQU12N20L
January 2009
QFET
FQD12N20L / FQU12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
D
S
D-PAK
= 25°C)
C
G
D
S
= 25°C unless otherwise noted
C
= 25°C)
C
= 100°C)
C
FQD Series
- Continuous (T
- Continuous (T
- Derate above 25°C 0.44 W/°C
G
Absolute Maximum Ratings T
Symbol Parameter FQD12N20L / FQU12N20L Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
, T
T
J
STG
T
L
Drain-Source Voltage 200 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 20 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TA = 25°C) *
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Features
• 9.0A, 200V, R
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
• RoHS Compliant
I-PAK
FQU Series
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 0.28Ω @VGS = 10 V
DS(on)
G
9.0 A
5.7 A
36 A
210 mJ
9.0 A
5.5 mJ
5.5 V/ns
2.5 W
55 W
300 °C
D
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S
®
Thermal Charac teristics
Symbol Parameter Typ Max Units
R
θJC
R
θJA
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation Rev. A2, January 2009
Thermal Resistance, Junction-to-Case -- 2.27 °C/W
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Thermal Resistance, Junction-to-Ambient -- 110 °C/W
FQD12N20L / FQU12N20L
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter T e st Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
/ ∆T
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
= 0 V, ID = 250 µA
GS
= 250 µA, Referenced to 25°C
I
D
V
= 200 V, VGS = 0 V
DS
= 160 V, TC = 125°C
V
DS
V
= 20 V, VDS = 0 V
GS
V
= -20 V, VDS = 0 V
GS
200 -- -- V
-- 0.14 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
V
= 10 V, ID = 4.5 A
GS
= 5 V, ID = 4.5 A
V
GS
= 30 V, ID = 4.5 A
V
DS
(Note 4)
1.0 -- 2.0 V
0.22
--
0.25
0.28
0.32
-- 11.6 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 120 155 pF
Reverse Transfer Capacitance -- 17 22 pF
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
-- 830 1080 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 190 390 ns
Turn-Off Delay Time -- 60 130 ns
Turn-Off Fall Time -- 120 25 0 n s
Total Gate Charge
Gate-Source Charge -- 2.8 -- nC
Gate-Drain Charge -- 7.6 -- nC
V
= 100 V, ID = 11.6 A,
DD
R
= 25 Ω
G
= 160 V, ID = 11.6 A,
V
DS
V
GS
= 5 V
(Note 4, 5)
(Note 4, 5)
-- 15 40 ns
-- 16 21 nC
Ω
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.9mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11.6A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2009 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A
V
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 0.56 -- µC
Starting TJ = 25°C
DSS,
= 0 V, IS = 9.0 A
GS
= 0 V, IS = 11.6 A,
V
GS
dI
/ dt = 100 A/µs
F
(Note 4)
-- -- 1.5 V
-- 128 -- ns
Rev. A2, January 2009
Typical Characteristics
FQD12N20L / FQU12N20L
V
GS
Top : 1 0 V
8.0 V
6.0 V
1
10
5.0 V
4.5 V
4.0 V
3.5 V
Botto m : 3.0 V
0
10
, Drain Current [A]
D
I
-1
10
-1
10
0
10
※
Notes :
1. 25 0μs Pulse Test
2. T
C
VDS , Drain-Source Voltage [V]
1.5
1.2
],
Ω
0.9
[
DS(on)
R
0.6
0.3
Drain-Source On-Resistance
0.0
0 6 12 18 24 30 36
VGS = 5 V
VGS = 10V
ID , Drain Curren t [A]
1
10
℃
150
℃
= 25
1
10
0
10
℃
25
, Drain Current [A]
D
I
-1
10
0246810
℃
-55
※
Notes :
1. V
= 30V
DS
2. 250μs Pulse Test
VGS, Gate-Source V oltage [V]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i st ics
1
10
0
10
℃
℃
150
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
※
Note s :
1. V
= 0V
GS
2. 250μs Pulse T e st
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variati on vs .
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
VDS = 100V
※
Note : I
1800
1500
1200
900
600
Capacitance [pF]
300
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
0
10
※
Note s :
1. V
2. f = 1 MHz
1
10
= 0 V
GS
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
VDS = 160V
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charg e C haracteristics
= 11.6 A
D
Rev. A2, January 2009©2009 Fairchild Semiconductor Corporation
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