Fairchild FQT7N10 service manual

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FQT7N10

100V N-Channel MOSFET

FQT7N10

May 2001

TM

QFET

General Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching

Features

• 1.7A, 100V, R

• Low gate charge ( typical 5.8 nC)

• Low Crss ( typical 10 pF)

• Fast switching

• Improved dv/dt capability

= 0.35Ω @VGS = 10 V

DS(on)

performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

D

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S

D

G

Absolute Maximum Ratings T

S

SOT-223

FQT Series

= 25°C unless otherwise noted

C

!

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G

Symbol Parameter FQT7N10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

Drain-Source Voltage 100 V
Drain Current

- Continuous (T

- Continuous (T

Drain Current - Pulsed

= 25°C)

C

= 70°C)

C

(Note 1)

1.7 A

1.36 A

6.8 A
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

50 mJ

1.7 A

0.2 mJ

6.0 V/ns

2.0 W

- Derate above 25°C 0.016 W/°C

T

, T

J

STG

T

L

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation

FQT7N10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = 250 µA

V

GS

I

= 250 µA, Referenced to 25°C

D

V

= 100 V, VGS = 0 V

DS

V

= 80 V, TC = 125°C

DS

V

= 25 V, VDS = 0 V

GS

= -25 V, VDS = 0 V

V

GS

100 -- -- V

-- 0.1 -- V/°C

-- -- 1 µA

-- -- 10 µA

-- -- 100 nA

-- -- -100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = 250 µA

DS

= 10 V, ID = 0.85 A

V

GS

= 40 V, ID = 0.85 A

V

DS

(Note 4)

2.0 -- 4.0 V

-- 0.28 0.35 Ω

-- 1.85 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 60 75 pF
Reverse Transfer Capacitance -- 10 13 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 24 60 ns
Turn-Off Delay Time -- 13 35 ns
Turn-Off Fall Time -- 19 50 ns
Total Gate Charge
Gate-Source Charge -- 1.4 -- nC
Gate-Drain Charge -- 2.5 -- nC

= 50 V, ID = 7.3 A,

V

DD

= 25 Ω

R

G

V

= 80 V, ID = 7.3 A,

DS

V

GS

= 10 V

(Note 4, 5)

(Note 4, 5)

-- 7 25 ns

-- 5.8 7.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2001 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- 1.7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 A

= 0 V, IS = 1.7 A

Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge -- 150 -- nC

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = 7.3 A,

V

GS

/ dt = 100 A/µs

dI

F

-- -- 1.5 V

-- 70 -- ns

(Note 4)

Rev. A, May 2001

Typical Characteristics

FQT7N10

V

GS

Top : 1 5 .0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Botto m : 4.5 V

0

10

, Drain Current [A]

D

I

-1

10

0

10

※

Note s :

1. 25 0μs Pulse Test

2. T

VDS, Drain-Source Voltage [V]

1.4

1.2

1.0

],

Ω

0.8

[

DS(on)

0.6

R

0.4

Drain-Source On-Resistance

0.2

0.0
0 3 6 9 12 15 18

VGS = 10V

VGS = 20V

ID , Drain Curren t [A]

10

※

= 25

C

1

Note : T

℃

150

0

℃

10

℃

25

, Dra in Curre n t [A ]

D

I

-1

10

246810

℃

-55

※

Note s :

1. V

= 40V

DS

2. 250μs Pulse Tes t

VGS , Ga te -S ource V o ltag e [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

= 25

J

℃

10

, Reverse Drain Current [A]

DR

I

10

℃

℃

150

25

-1

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

※

Note s :

= 0V

1. V

GS

2. 250μs Pulse Test

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

500

400

300

200

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

※

C

iss

C

oss

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

Capacitance [pF]

100

0

-1

10

C

rss

0

10

1

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

0

01234567

QG, Total Gate C h arg e [nC]

VDS = 50V

VDS = 80V

※

Note : I

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

= 7.3 A

D

Rev. A, May 2001©2001 Fairchild Semiconductor Corporation