Fairchild FQT5P10 service manual

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FQT5P10

100V P-Channel MOSFET

FQT5P10

TM

QFET

General Description

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.

D

S

G

SOT-223

FQT Series

Absolute Maximum Ratings T

Symbol Parameter FQT5P10 Units

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

, T

J

STG

T

L

Drain-Source Voltage -100 V
Drain Current

Drain Current - Pulsed
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

- Continuous (T

- Continuous (T

- Derate above 25°C 0.016 W/°C

= 25°C unless otherwise noted

C

= 25°C)

C

= 70°C)

C

Features

• -1.0A, -100V, R

• Low gate charge ( typical 6.3 nC)

• Low Crss ( typical 18 pF)

• Fast switching

• Improved dv/dt capability

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

= 1.05Ω @VGS = -10 V

DS(on)

D

G

S

-1.0 A

-0.8 A

-4.0 A

55 mJ

-1.0 A

0.2 mJ

-6.0 V/ns

2.0 W

300 °C

Thermal Characteristics

Symbol Parameter Typ Max Units

R

θJA

* When mounted on the minimum pad size recommended (PCB Mount)

©2002 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W

Rev. B, August 2002

FQT5P10

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆B

VDSS

/ ∆T
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

V

= -100 V, VGS = 0 V

DS

V

= -80 V, TC = 125°C

DS

V

= -30 V, VDS = 0 V

GS

= 30 V, VDS = 0 V

V

GS

-100 -- -- V

-- -0.1 -- V/°C

-- -- -1 µA

-- -- -10 µA

-- -- -100 nA

-- -- 100 nA

On Characteristics

V
R

g

FS

GS(th)

DS(on)

Gate Threshold Voltage
Static Drain-Source

On-Resistance
Forward Transconductance

V

= VGS, ID = -250 µA

DS

= -10 V, ID = -0.5 A

V

GS

= -40 V, ID = -0.5 A

V

DS

(Note 4)

-2.0 -- -4.0 V

-- 0.82 1.05 Ω

-- 1.4 -- S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance -- 70 90 pF
Reverse Transfer Capacitance -- 18 25 pF

= -25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

-- 190 250 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time
Turn-On Rise Time -- 70 150 ns
Turn-Off Delay Time -- 12 35 ns
Turn-Off Fall Time -- 30 70 n s
Total Gate Charge
Gate-Source Charge -- 1.7 -- nC
Gate-Drain Charge -- 3.0 -- nC

= -50 V, ID = -4.5 A,

V

DD

= 25 Ω

R

G

V

= -80 V, ID = -4.5 A,

DS

V

GS

= -10 V

(Note 4, 5)

(Note 4, 5)

-- 9 30 ns

-- 6.3 8.2 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

trr Reverse Recovery Time V
Qrr Reverse Recovery Charge -- 0.27 -- µC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 83mH, IAS = -1.0A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -4.5A, di/dt ≤ 300A/µs, VDD ≤ BV

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation

Maximum Continuous Drain-Source Diode Forward Current -- -- -1.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- -4.0 A

= 0 V, IS = -1.0 A

Drain-Source Diode Forward Voltage

Starting TJ = 25°C

DSS,

V

GS

= 0 V, IS = -4.5 A,

GS

dI

/ dt = 100 A/µs

F

(Note 4)

-- -- -4.0 V

-- 85 -- ns

Rev. B, August 2002

Typical Characteristics

FQT5P10

V

GS

Top : - 1 5 .0 V

-10.0 V

-8.0 V

-7.0 V

0

-6.5 V

10

-5.5 V

-5.0 V
Bottom : -4.5 V

-1

10

, Drain Current [A]

D

-I

-2

10

-1

10

0

10

※

Note :

1. 250μs Pulse Test

℃

2. T

= 25

C

1

10

-VDS, Drain-Source Voltage [V]

VGS = - 10V

VGS = - 20V

※

℃

Note : T

= 25

J

2.5

2.0

],

Ω

1.5

[

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

0.0
036912

-ID , Drai n Curren t [A]

0

10

℃

150

℃

, Dra in Curre n t [A ]

-I

25

D

℃

-55

-1

10

246810

※

Note s :

1. V

= -40V

DS

2. 250μs Pulse Test

-VGS , Gate-Sou rc e Voltage [V ]

Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s

0

10

℃

150

℃

, Re ve rs e D ra in C u rre n t [A ]

DR

-I

-1

10

0.0 0.5 1.0 1.5 2.0 2.5 3.0

25

※

Note s :

1. V

= 0V

GS

2. 250μs Pulse Test

-VSD , Sou rc e- D ra in V o ltag e [V ]

Figure 3. On-Resistance Variati on vs.

Drain Current and Gate Voltage

500

450

400

350

300

250

200

150

Capacitance [pF]

100

50

0

-1

10

Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation

C

iss

C

oss

C

C

oss

C

iss

C

rss

0

10

rss

-VDS, Drain-Source Voltage [V]

= Cgs + Cgd (Cds = shorted)

= Cds + C

gd

= C

gd

※

Notes :

= 0 V

1. V

GS

2. f = 1 MH z

1

10

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

VDS = -50V

VDS = -80V

VDS = -20V

※

Note : I

= -4.5 A

D

Rev. B, August 2002

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

-V

0

012345678

QG, Tota l Gate Charge [n C]