Fairchild FQT5N20 service manual
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FQT5N20
200V N-Channel MOSFET
FQT5N20
May 2001
TM
QFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
Features
• 1.0A, 200V, R
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• Improved dv/dt capability
= 1.2Ω @VGS = 10 V
DS(on)
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
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S
D
G
Absolute Maximum Ratings T
S
SOT-223
FQT Series
= 25°C unless otherwise noted
C
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G
Symbol Parameter FQT5N20 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
Drain-Source Voltage 200 V
Drain Current
- Continuous (T
- Continuous (T
Drain Current - Pulsed
= 25°C)
C
= 70°C)
C
(Note 1)
1.0 A
0.8 A
4.0 A
Gate-Source Voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60 mJ
1.0 A
0.25 mJ
5.5 V/ns
2.5 W
- Derate above 25°C 0.02 W/°C
T
, T
J
STG
T
L
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Thermal Characteristics
Symbol Parameter Typ Max Units
R
θJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Ambient * -- 50 °C/W
Rev. A, May 2001©2001 Fairchild Semiconductor Corporation
FQT5N20
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆B
∆T
I
DSS
I
GSSF
I
GSSR
DSS
VDSS
J
Drain-Source Breakdown Voltage
/
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
V
= 200 V, VGS = 0 V
DS
V
= 160 V, TC = 125°C
DS
V
= 30 V, VDS = 0 V
GS
= -30 V, VDS = 0 V
V
GS
200 -- -- V
-- 0.2 -- V/°C
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
-- -- -100 nA
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
= VGS, ID = 250 µA
DS
= 10 V, ID = 0.5 A
V
GS
= 40 V, ID = 0.5 A
V
DS
(Note 4)
3.0 -- 5.0 V
-- 0.96 1.2 Ω
-- 1.4 -- S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance -- 40 50 pF
Reverse Transfer Capacitance -- 6 8 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
-- 210 270 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time -- 55 120 ns
Turn-Off Delay Time -- 9 30 ns
Turn-Off Fall Time -- 25 60 n s
Total Gate Charge
Gate-Source Charge -- 1.5 -- nC
Gate-Drain Charge -- 2.2 -- nC
= 100 V, ID = 4.5 A,
V
DD
= 25 Ω
R
G
V
= 160 V, ID = 4.5 A,
DS
V
GS
= 10 V
(Note 4, 5)
(Note 4, 5)
-- 7 25 ns
-- 6.0 7.5 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
trr Reverse Recovery Time V
Qrr Reverse Recovery Charge -- 0.3 -- µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 90mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 300A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Maximum Continuous Drain-Source Diode Forward Current -- -- 1.0 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A
= 0 V, IS = 1.0 A
Drain-Source Diode Forward Voltage
Starting TJ = 25°C
DSS,
V
GS
= 0 V, IS = 4.5 A,
GS
dI
/ dt = 100 A/µs
F
(Note 4)
-- -- 1.5 V
-- 95 -- ns
Rev. A, May 2001
Typical Characteristics
FQT5N20
V
GS
Top : 1 5 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
0
Botto m : 5.5 V
10
, Dra in Curre n t [A ]
D
I
※
-1
10
-1
10
0
10
Note s :
1. 250μs Pulse Test
℃
= 25
2. T
C
1
10
VDS , Drain -S o u rc e Vo lta g e [V]
7
6
5
],
Ω
4
[
DS(on)
3
R
2
Drain-Source On-Resistance
1
0
0.0 1.5 3.0 4.5 6.0 7.5 9.0
VGS = 10V
VGS = 20V
ID , Drai n Curren t [A]
0
10
, Dra in Curre n t [A ]
D
I
-1
10
246810
℃
150
℃
25
℃
-55
※
Note s :
= 40V
1. V
DS
2. 250μs Pulse Tes t
VGS , Ga te -S ource V o ltag e [V ]
Figure 2. Transfer CharacteristicsFigure 1. On-Region Char act er i stic s
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
150
※
Note s :
= 0V
1. V
GS
2. 250μs Pulse Test
℃
℃
25
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variati on vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
VDS = 40V
VDS = 100V
VDS = 160V
※
Note : I
350
300
250
200
150
100
Capacitances [pF]
50
0
-1
10
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
※
Notes :
= 0 V
1. V
GS
10
2. f = 1 MHz
1
C
rss
0
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0123456
QG, Tota l Gate Charge [n C]
Figure 5. Capacitance C haracteristics Figure 6. Gate Charge Characteristics
= 4.5 A
D
Rev. A, May 2001©2001 Fairchild Semiconductor Corporation
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